The nucleation of carbon caps on small nickel clusters is studied using a tight binding model coupled to grand canonical Monte Carlo simulations. It takes place in a well defined carbon chemical potential range, when a critical concentration of surface carbon atoms is reached. The solubility of carbon in the outermost Ni layers, that depends on the initial, crystalline or disordered, state of the catalyst and on the thermodynamic conditions, is therefore a key quantity to control the nucleation.

Controlling the structure of single-wall carbon nanotubes during their synthesis by chemical vapor deposition remains a challenging issue. Here, using a specific synthesis protocol and ex situ transmission electron microscopy, we perform a statistical analysis of the structure of the tubes and of the catalyst particles from which they grow. We discriminate two nucleation modes, corresponding to different nanotube-particle junctions, that occur independently of the particle size. With the support of tight binding calculations, we show that a direct control of the nanotube diameter by the particle can only be achieved under growth conditions close to thermodynamic equilibrium.

Boron nitride single layer belongs to the family of 2D materials whose optical properties are currently receiving considerable attention. Strong excitonic effects have already been observed in the bulk and still stronger effects are predicted for single layers. We present here a detailed study of these properties by combining ab initio calculations and a tight-binding-Wannier analysis in both real and reciprocal space. Due to the simplicity of the band structure with single valence (π) and conduction (π * ) bands the tight-binding analysis becomes quasi quantitative with only two adjustable parameters and provides tools for a detailed analysis of the exciton properties. Strong deviations from the usual hydrogenic model are evidenced. The ground state exciton is not a genuine Frenkel exciton, but a very localized "tightly-bound" one. The other ones are similar to those found in transition metal dichalcogenides and, although more localized, can be described within a Wannier-Mott scheme.

The dynamics of the graphene–catalyst interaction during chemical vapor deposition are investigated using in situ, time- and depth-resolved X-ray photoelectron spectroscopy, and complementary grand canonical Monte Carlo simulations coupled to a tight-binding model. We thereby reveal the interdependency of the distribution of carbon close to the catalyst surface and the strength of the graphene–catalyst interaction. The strong interaction of epitaxial graphene with Ni(111) causes a depletion of dissolved carbon close to the catalyst surface, which prevents additional layer formation leading to a self-limiting graphene growth behavior for low exposure pressures (10–6–10–3 mbar). A further hydrocarbon pressure increase (to ∼10–1 mbar) leads to weakening of the graphene–Ni(111) interaction accompanied by additional graphene layer formation, mediated by an increased concentration of near-surface dissolved carbon. We show that growth of more weakly adhered, rotated graphene on Ni(111) is linked to an initially higher level of near-surface carbon compared to the case of epitaxial graphene growth. The key implications of these results for graphene growth control and their relevance to carbon nanotube growth are highlighted in the context of existing literature.

Scanning tunneling microscopy ͑STM͒ is one of the most appropriate techniques to investigate the atomic structure of carbon nanomaterials. However, the experimental identification of topological and nontopological modifications of the hexagonal network of sp 2 carbon nanostructures remains a great challenge. The goal of the present theoretical work is to predict the typical electronic features of a few defects that are likely to occur in sp 2 carbon nanostructures, such as atomic vacancy, divacancy, adatom, and Stone-Wales defect. The modifications induced by those defects in the electronic properties of the graphene sheet are investigated using first-principles calculations. In addition, computed constant-current STM images of these defects are calculated within a tight-binding approach in order to facilitate the interpretation of STM images of defected carbon nanostructures.

Being a true two-dimensional crystal, graphene has special properties. In particular, a point-like defect in graphene may induce perturbations in the long range. This characteristic questions the validity of using a supercell geometry in an attempt to explore the properties of an isolated defect. Still, this approach is often used in ab-initio electronic structure calculations, for instance. How does this approach converge with the size of the supercell is generally not tackled for the obvious reason of keeping the computational load to an affordable level. The present paper addresses the problem of substitutional nitrogen doping of graphene. DFT calculations have been performed for 9 × 9 and 10 × 10 supercells. Although these calculations correspond to N concentrations that differ by ∼ 10%, the local densities of states on and around the defects are found to depend significantly on the supercell size. Fitting the DFT results by a tight-binding Hamiltonian makes it possible to explore the effects of a random distribution of the substitutional N atoms, in the case of finite concentrations, and to approach the case of an isolated impurity when the concentration vanishes. The tight-binding Hamiltonian is used to calculate the STM image of graphene around an isolated N atom. STM images are also calculated for graphene doped with 0.5 at% concentration of nitrogen. The results are discussed in the light of recent experimental data and the conclusions of the calculations are extended to other point defects in graphene.

We present a tight-binding potential for transition metals, carbon, and transition metal carbides, which has been optimized through a systematic fitting procedure. A minimal basis, including the s, p electrons of carbon and the d electrons of the transition metal, is used to obtain a transferable tight-binding model of the carbon-carbon, metal-metal and metal-carbon interactions applicable to binary systems. The Ni-C system is more specifically discussed. The successful validation of the potential for different atomic configurations indicates a good transferability of the model and makes it a good choice for atomistic simulations sampling a large configuration space. This approach appears to be very efficient to describe interactions in systems containing carbon and transition metal elements.

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