Growth of Sb and InSb by molecular-beam epitaxy

Noreika, A. J.; Francombe, M. H.; Wood, C. E. C.

doi:10.1063/1.328732

Cited by 131 publications

(24 citation statements)

References 10 publications

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“…It was confirmed by RHEED observations performed along ½2 1 1 and ½0 1 1 azimuths of the thermally cleaned InSb(1 1 1)A substrate prepared by a MBE method that the thermally cleaned InSb(1 1 1)A surface (lattice constant: a ¼ 0:64798 nm) has a 2 Â 2 reconstructed structure [3,5,[9][10][11]. Figs.…”

Section: Resultssupporting

confidence: 71%

Characterization of Au thin films deposited on α-Sn(111)-(3×3)/InSb(111)A surfaces

Kasukabe

Zhao

Nishida

et al. 2007

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 71%

Characterization of Au thin films deposited on α-Sn(111)-(3×3)/InSb(111)A surfaces

Kasukabe

Zhao

Nishida

et al. 2007

Journal of Crystal Growth

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“…Cooling down to room temperature, followed by the growth of a few hundred A of InSb, both the (111)^4 and (111)5 specimens showed a sharp (2x2) TED pattern. Reheating of these specimens at 400 °C gave patterns characteristic of each specimen surface: For (110,4 the (2x2) structure remained unchanged, whereas for (111)5 the structure changed to the (3x3) [13]. Additionally, as far as the pressure in the chamber was preserved within the range of 10 ~1 0 Torr, no change in these extra reflections was observed.…”

mentioning

confidence: 73%

Sb trimer structure of the InSb(111)B-(2×2) surface as determined by transmission electron diffraction

Nakada

Ohteki

1991

Phys. Rev. Lett.

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We have proposed a new model for the Sb-stabilized InSbO 1 l)#-(2x2) reconstructed surface prepared by molecular-beam epitaxy. Adsorption of Sb trimers at a fourfold atop site of the outermost Sb layers is confirmed by intensity analysis of transmission-electron-diffraction patterns obtained from the reconstructed surface. Also, Auger electron spectroscopy measurements provided a satisfactory surface composition for the InSbG 1 l)Z?-(2x2) surface. PACS numbers: 68.35.Bs, 61.16.Di, 68.55.Bd The (11 0/4 and (111)2? polar surfaces of III-V compound semiconductors exhibit a considerable number of reconstructions, depending on temperature and surface compositions. In order to obtain details on the surface reconstructions and the related surface phase transitions, first the atomic structures of both polar surfaces have to be determined. Recently, for the (110,4 surface of GaAs, Tong, Xu, and Mei [1] proposed the vacancy buckling model which has been widely accepted because the structure has been confirmed by a variety of investigations: diffraction experiments [1,2], theoretical calculations [3,4], and scanning tunneling microscopy (STM) [5]. On the other hand, for the (11 l)Z? surface a similar (2x2) structure has been observed on the molecularbeam-epitaxy-(MBE-) grown surface under group-Velement stabilized conditions. However, no well-established model for the (111)/? surface has been reported. For example, although for the GaAsG 1 0/?-(2x2) structure total energy calculations led to a multivacancy model [6] and a staggered As vacancy model [7], both failed in low-energy electron-diffraction (LEED) tests [8].We use transmission electron diffraction (TED) in a structure analysis for the (111)/? surface of InSb. The reason is that information obtained by this method can be interpreted by kinematical approximation under a given diffraction condition, similar to general x-ray diffraction [9,10]. While other electron-diffraction methods, such as LEED and reflection high-energy electron diffraction (RHEED), are useful for surveying surface symmetry, in their interpretations dynamical scattering effects always have to be taken into account. TED can be also complementary to STM, which gives information on the top layer of a surface.In this paper, we present the first quantitative TED analysis of the InSbO 1 0/?-(2x2) surface structure and propose a structural model which explains other experimental and theoretical works.Experiments were performed with a modified JEM-7A transmission electron microscope (100 kV). A detailed description of the experimental apparatus was presented in our earlier papers [11,12]. The ultimate pressure in the specimen chamber was less than 5xl0~1 0 Torr and the pressure during evaporation was below 2x 10~9 Torr. Samples of (110,4-and (110/?-oriented InSb (nondoped) were chemically etched with a mixture of HNO3 and lactic acid (1:10) to form a round hole about 0.1 mm diameter with electron-transparent peripheries. The native oxide was removed from both types of substrate surfaces by heating at ...

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“…Also, observation of a high-temperature (3 × 1) phase has been reported at high temperature 21–23 , assumed to be caused by detachment of atomic rows beneath the reconstructed topmost layer due to the volatility of Sb 23 .…”

Section: Introductionmentioning

confidence: 97%

Crystalline and oxide phases revealed and formed on InSb(111)B

Mäkelä

Rad

Lehtiö

et al. 2018

Sci Rep

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Oxidation treatment creating a well-ordered crystalline structure has been shown to provide a major improvement for III–V semiconductor/oxide interfaces in electronics. We present this treatment’s effects on InSb(111)B surface and its electronic properties with scanning tunneling microscopy and spectroscopy. Possibility to oxidize (111)B surface with parameters similar to the ones used for (100) surface is found, indicating a generality of the crystalline oxidation among different crystal planes, crucial for utilization in nanotechnology. The outcome is strongly dependent on surface conditions and remarkably, the (111) plane can oxidize without changes in surface lattice symmetry, or alternatively, resulting in a complex, semicommensurate quasicrystal-like structure. The findings are of major significance for passivation via oxide termination for nano-structured III–V/oxide devices containing several crystal plane surfaces. As a proof-of-principle, we present a procedure where InSb(111)B surface is cleaned by simple HCl-etching, transferred via air, and post-annealed and oxidized in ultrahigh vacuum.

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Growth of Sb and InSb by molecular-beam epitaxy

Cited by 131 publications

References 10 publications

Characterization of Au thin films deposited on α-Sn(111)-(3×3)/InSb(111)A surfaces

Characterization of Au thin films deposited on α-Sn(111)-(3×3)/InSb(111)A surfaces

Sb trimer structure of the InSb(111)B-(2×2) surface as determined by transmission electron diffraction

Crystalline and oxide phases revealed and formed on InSb(111)B

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