Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application

Li, Zhonghui; Li, Chuanhao; Peng, Daqing; Zhang, Dongguo; Dong, Xiaoli; Pan, Lei; Luo, Weike; Li, Liang; Yang, Qiankun

doi:10.1016/j.spmi.2018.04.022

Cited by 8 publications

(5 citation statements)

References 20 publications

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“…Meanwhile, It has been reported that the electron mobility in the InAlGaN/GaN HEMTs was increased with improvements in the surface roughness, even with a high 2DEG density of 1 × 10 13 cm −2 . 15) This implies that the electron mobility in the InAlGaN barrier depends on the InAlGaN surface roughness, not RSC; this is referred to as RSR, which has also been reported in Si and SOI devices. 16,17) Increasing electron mobility is more important in enabling high-power and high-frequency operations because the InAlGaN/GaN HEMTs can obtain high 2DEG density, even in thin barrier layers.…”

mentioning

confidence: 84%

Probing the effects of surface roughness and barrier layer thickness in InAlGaN/GaN HEMTs to improve carrier mobility

Yaita

Yamada

Nakamura

et al. 2021

Appl. Phys. Express

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In this study, we investigated the effects of the thickness and surface roughness of InAlGaN barrier layers on the electron mobility of InAlGaN/GaN high-electron-mobility transistors (HEMTs) with low sheet resistance for applications at high frequencies. The results indicate that the carrier electron mobility of InAlGaN/GaN HEMTs decreases with barrier thickness. This is mainly due to the surface roughness of the InAlGaN barrier layer, which is significantly higher than that of the AlGaN barrier surface. In our experiments, we revealed that a thin GaN cap layer led to a decrease in the surface roughness of the InAlGaN barrier layer, thereby improving the electron mobility.

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mentioning

confidence: 84%

Probing the effects of surface roughness and barrier layer thickness in InAlGaN/GaN HEMTs to improve carrier mobility

Yaita

Yamada

Nakamura

et al. 2021

Appl. Phys. Express

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“…A new approach that uses Al‐rich ultrathin barrier layer can help minimize the effects of the recess gate technique and increase the performance and reliability of GaN devices. The structures with the barrier layer thicknesses lower than 7 nm are classified as ultrathin barrier HEMTs 11,12 . Ostermaier et al proposed an ultrathin barrier GaN‐based heterostructure with a 1‐nm InAlN barrier layer and 1‐nm AlN interlayer and 6‐nm highly doped GaN cap layer 13 .…”

Section: Introductionmentioning

confidence: 99%

“…The structures with the barrier layer thicknesses lower than 7 nm are classified as ultrathin barrier HEMTs. 11,12 Ostermaier et al proposed an ultrathin barrier GaN-based heterostructure with a 1-nm InAlN barrier layer and 1-nm AlN interlayer and 6-nm highly doped GaN cap layer. 13 This ultrathin barrier structure has many important features such as observing the short-channel effect and high transconductance in a HEMT structure.…”

Section: Introductionmentioning

confidence: 99%

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics

Narin

Kutlu-Narin

Atmaca

et al. 2022

Surface & Interface Analysis

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Metal-organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. GaN-based materials with very quality are grown the MOCVD, so we used this growth technique to grow InAlN/ GaN and AlN/GaN heterostructures in this study. The structural and surface properties of ultrathin barrier AlN/GaN and InAlN/GaN heterostructures are studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements. Screw, edge, and total dislocation densities for the grown samples have been calculated by using XRD results. The lowest dislocation density is found to be 1.69 Â 10 8 cm À2 for Sample B with a lattice-matched In 0.17 Al 0.83 N barrier. The crystal quality of the studied samples is determined using (002) symmetric and (102) asymmetric diffractions of the GaN material. In terms of the surface roughness, although reference sample has a lower value as 0.27 nm of root mean square values (RMS), Sample A with 4-nm AlN barrier layer exhibits the highest rough surface as 1.52 nm of RMS. The structural quality of the studied samples is significantly affected by the barrier layer thickness.The obtained structural properties of the samples are very important for potential applications like high-electron mobility transistors (HEMTs).

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“…[6] The quaternary AlInGaN alloy barrier can enhance its miscibility [7] and provide an additional degree of freedom to individually regulate energy bandgaps and stress states through the addition of Ga, [8,9] which is also expected to minimize the gate-to-channel distance at high-saturation current density. [10,11] To work at higher frequencies, the gate length in the conventional AlGaN/GaN HEMTs should be significantly scaled down. [12] However, the thickness of the AlGaN barrier cannot be further reduced by decreasing the gate length, [6] otherwise significantly reducing the saturation drain current density of the device.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier

Ling

Wang

Shen

et al. 2022

Physica Status Solidi (a)

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The effect of the InGaN channel on the performance of high‐electron‐mobility transistors (HEMTs) through the Silvaco Atlas simulator is investigated in detail. It is shown that the 2D electron gas (2DEG) density and carrier confinement of the device can be enhanced by replacing the GaN channel with the InGaN channel. The higher 2DEG density significantly increases the saturation drain current density, thus improving the current drive capability of the device. Meanwhile, better carrier confinement alleviates the short channel effects (SCEs) and traps state‐related current collapse in the GaN buffer, effectively improving the reliability of the device. Better carrier confinement also increases the current gain cutoff frequency (fT) and maximum oscillation frequency (fmax) to 133 and 226 GHz, while the fT and fmax of conventional GaN channel HEMTs are 104 and 167 GHz, respectively. These results indicate that AlInGaN/InGaN HEMTs achieve better performance in direct current (DC) and radio frequency (RF).

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Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application

Cited by 8 publications

References 20 publications

Probing the effects of surface roughness and barrier layer thickness in InAlGaN/GaN HEMTs to improve carrier mobility

Probing the effects of surface roughness and barrier layer thickness in InAlGaN/GaN HEMTs to improve carrier mobility

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics

Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier

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