Growth of pure wurtzite InGaAs nanowires for photovoltaic and energy harvesting applications

Semiconductor thermionics for next generation solar cells: photon enhanced or pure thermionic?

“…However, the CNT work function is typically above 4.5 eV and needs to be reduced through coatings with high temperature stability 45 , 46 . Vertically aligned III–V nanowire arrays have also shown low reflectance over the visible spectrum, which can be tuned by adjusting the nanowire diameter 47 or the growth time 48 . The ultimate challenge is to combine all the desired properties into a single material or heterostructure.…”

Compositional Correlation between the Nanoparticle and the Growing Au-Assisted InxGa1–xAs Nanowire

“…This allows optical applications in the near- to mid-infrared region if the In concentration can be set to a constant, homogeneous value throughout the nanowire. 3 , 4 , 11 Compositional control has, however, proven to be difficult, and only certain homogeneous compositions have been achieved for InGaAs. 12 …”

“…This is due to III–V semiconductors being stoichiometric compounds, where each group V element forms a pair with a group III element in the solid, giving the formula A x B 1– x V for a ternary compound with two group III elements, A and B. Nanowires are particularly promising compared to thin film growth, because lateral relaxation eliminates the need for a lattice-matched substrate and greatly increases the potential to selectively vary the composition. The variable composition increases the ability to tailor the nanowires to fit applications in the many fields where they can be used, including optoelectronics, − quantum physics, , and life science. , InGaAs, which is a combination of InAs and GaAs, has, for example, been theoretically predicted to show high carrier mobilities with a small direct bandgap. This allows optical applications in the near- to mid-infrared region if the In concentration can be set to a constant, homogeneous value throughout the nanowire. ,, Compositional control has, however, proven to be difficult, and only certain homogeneous compositions have been achieved for InGaAs …”

“…The variable composition increases the ability to tailor the nanowires to fit applications in the many fields where they can be used, including optoelectronics, − quantum physics, , and life science. , InGaAs, which is a combination of InAs and GaAs, has, for example, been theoretically predicted to show high carrier mobilities with a small direct bandgap. This allows optical applications in the near- to mid-infrared region if the In concentration can be set to a constant, homogeneous value throughout the nanowire. ,, Compositional control has, however, proven to be difficult, and only certain homogeneous compositions have been achieved for InGaAs …”

GaP/GaPN core/shell nanowire array on silicon for enhanced photoelectrochemical hydrogen production

“…The alignment of energy levels at the p-Si-cs-NW interface will favor the charge transfer. In addition, the NW nanostructure [3,31,38] can both shorten the carrier collection distance and increase the specific surface area, which promote the reaction kinetics and improve the anti-reflection property of the photoelectrode [43,44]. This efficient and scalable strategy is expected to yield higher PEC water-splitting performances.…”