Growth of nanoscale InGaN self-assembled quantum dots

Ji, Liang‐Wen; Su, Yan–Kuin; Chang, Shoou‐Jinn; Wu, Liang; Fang, Te‐Hua; Chen, Jone-Fang; Tsai, Tsuen‐Chiuan; Xue, Qi‐Kun; Chen, S. C.

doi:10.1016/s0022-0248(02)02130-9

Cited by 59 publications

(35 citation statements)

References 20 publications

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“…Using the S-K mode, GaN dots have been fabricated on an AlN layer by molecular-beam epitaxy (MBE) [18,19]. Alternatively, InGaN dots on a GaN layer were also reported with MBE [20] and with metalorganic chemical vapor deposition (MOCVD) [21][22][23]. In the second method, "anti-surfactants" are introduced.…”

Section: Growth Of Qdsmentioning

confidence: 99%

“…Two years later, lasing oscillation of InGaN dots was observed by optically pumped excitation with a threshold energy of 6.0 μJ and a linewidth below 0.1 nm above the threshold at room temperature (RT) [12]. Although growth and optical properties of InGaN QDs are intensively studied currently [22,39,40], there has been only very few reports on lasing from InGaN-based QDs, especially under an electrical injection. Nevertheless, an electrically injected InGaN/GaN QD laser has been reported recently [41].…”

Section: Qd Lasersmentioning

confidence: 99%

“…2). As discussed in Section II, nitride QDs can be self-organized using growth interruption during the MOCVD growth [22,23]. By this method, L. W. Ji and Y. K. Su et al [43,44] have successfully fabricated blue LEDs with InGaN/GaN multiple quantum dot (MQD) structure, as is shown in Fig.…”

Section: Qd Ledsmentioning

confidence: 99%

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III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

Weng

Ling

et al. 2011

Nano-Micro Lett.

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During the last two decades, III-nitride-based quantum dots (QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first present an overview on the techniques of fabrication for III-nitride-based QDs. Then various optoelectronic devices such as QD lasers, QD light-emitting diodes (LEDs), QD infrared photodetectors (QDIPs) and QD intermediate band (QDIB) solar cells (SCs) are discussed. Finally, we focus on the future research directions and how the challenges can be overcome.

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Section: Growth Of Qdsmentioning

confidence: 99%

Section: Qd Lasersmentioning

confidence: 99%

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III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

Weng

Ling

et al. 2011

Nano-Micro Lett.

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“…The growth interruption is believed to aid in the formation of dots from the strained InGaN layer [5]. Samples differ in the InGaN deposition time, t, ranging from 12 to 18 seconds.…”

mentioning

confidence: 99%

Optical spectroscopy of InGaN‐GaN quantum dot ensembles

Davies

Mowbray

Parbrook

et al. 2009

Phys. Status Solidi (c)

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InGaN‐GaN quantum dots (QDs) have been grown, with variations in the deposition time used to vary the properties of the dots. Atomic force microscopy (AFM) studies of uncapped dots indicate a small increase in dot density with increasing deposition time. Photoluminescence (PL) spectroscopy at low temperatures reveals a red shift of the dot emission as the deposition time is increased. Power dependent PL measurements indicate that it is relatively easy to saturate the QD ground state emission because of their low density and expected long carrier lifetime. Emission from an excited state is observed for high excitation powers. With increasing deposition time the activation energy which determines the high temperature quenching of the dot PL is found to increase. Photoluminescence excitation (PLE) reveals a continuum of states below the GaN band edge which is attributed to the presence of a wetting layer (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…It has also been shown that nitride nanostructures can be self-assembled using growth interruption during the metalorganic chemical vapor deposition (MOCVD) growth [13]. Although the size fluctuations of selfassembled QDs could result in inhomogeneous optical and electrical characteristics, the self-assembly of strain-induced islands provides the means for creating zero-dimensional quantum structures without having to overcome the current limitations of lithography.…”

mentioning

confidence: 99%

InGaN/GaN multi‐quantum dot light‐emitting diodes

Ji¹,

Su²,

Chang³

2004

phys. stat. sol. (c)

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It has been demonstrated that InGaN/GaN blue light-emitting diodes (LEDs) with multiple quantum dot (MQD) were successfully fabricated by metal-organic chemical vapor deposition (MOCVD). We have formed nanoscale InGaN self-assembled QDs in the well layers of the active region with a typical 3-nm height and 10-nm lateral dimension. With a 20-mA DC injection current, the forward voltage was 3.1 V and 3.5 V for MQD LED and conventional nitride-based multi-quantum well (MQW) LED with the same structure, respectively. It was also found that EL peak position of the MQD LED is more sensitive to the amount of injection current, as compared to the conventional MQW LEDs.1 Introduction Heteroepitaxial growth of highly strained material systems has been quite attractive as it offers the possibility of producing low-dimensional carrier confinement nanostructures, such as quantum wells (QWs) and quantum dots (QDs) [1]. They present the utmost challenge to semiconductor technology, making possible fascinating novel devices. III-nitride semiconductor materials have a wurtzite crystal structure and a direct energy band gap. We could also achieve nitride-based heteroepitaxial growth easily. At room temperature, the band gap energy of AlInGaN varies from 0.7 to 6.2 eV depends on its composition. Therefore, III-nitride semiconductors are particularly useful for light-emitting diodes (LEDs) and laser diodes (LDs) in this wavelength region [2][3][4][5]. Typical high-brightness LEDs have a multiple quantum well (MQW) active region. The MQW LED is a kind of heterojunction device, in which electrons and holes are confined in the well layers. Thus, one can achieve high quantum efficiency from the MQW LEDs since carrier can recombine easily in the confined well layers [6][7][8][9]. Although high brightness InGaN-GaN MQW LEDs are already commercially available, it can be theoretically predicted that the realization of LEDs with QDs in the active layer would improve the performance of LEDs.Recently, it has been shown that nitride nanostructures can be self-assembled using the strain-induced Stranski-Krastanov (S-K) growth mode without any substrate patterning process [10][11][12]. It has also been shown that nitride nanostructures can be self-assembled using growth interruption during the metalorganic chemical vapor deposition (MOCVD) growth [13]. Although the size fluctuations of selfassembled QDs could result in inhomogeneous optical and electrical characteristics, the self-assembly of strain-induced islands provides the means for creating zero-dimensional quantum structures without having to overcome the current limitations of lithography. These self-assembled QDs could also be used to study novel device physics [14][15][16]. In this work, we report the successful fabrication of blue LEDs with multiple InGaN dots-in-a-well (DWELL) structure, i.e. InGaN-GaN multiple quantum dot (MQD) LEDs, grown on 2-inch sapphire substrates using a growth interruption method in MOCVD system. Details for the formation of QDs are reported in this study. In ...

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Growth of nanoscale InGaN self-assembled quantum dots

Cited by 59 publications

References 20 publications

III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

Optical spectroscopy of InGaN‐GaN quantum dot ensembles

InGaN/GaN multi‐quantum dot light‐emitting diodes

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