Growth of nanocrystalline diamond by dual radio frequency inductively coupled plasma jet CVD

Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate

“…The condition of the plasma can be deduced from the ratio between Hβ and Hα. Compared to our previous work [27], the electron temperature (Te) of the plasma was increased from 2.48 eV to 3.92 eV, indicating a strong enhancement of the plasma energy. Figure 3.…”

“…Compared to our previous work [27], the electron temperature (Te) of the plasma was increased from 2.48 eV to 3.92 eV, indicating a strong enhancement of the plasma energy. Figure 4 shows the effect of methane concentration on the surface morphology of the deposited diamond films.…”

“…According to our past research, dual RF-ICP can be considered as an effective way to avoid these problems. Moreover, poly-crystal and single-crystal diamond films have been fabricated successfully by very low growth rates [24][25][26][27]. In this work, by adjusting growth condition, the growth rate of the SCD films have been greatly enhanced, and the maximum growth rate can exceed 18 µm/h.…”

Recent Progress of Nanodiamond Film in Controllable Fabrication and Field Emission Properties

“…The film morphology and internal structure are usually determined by the growth conditions and the CVD energy sources. There are many CVD methods with different energy sources used for facilitating the synthesis of ND films, such as pulsed microwave plasma [ 57 , 58 ], direct current (DC) glow discharge plasma [ 59 , 60 ], inductively coupled radio frequency (RF) plasma [ 61 , 62 ], and hot filament [ 63 , 64 ]. Among them, the plasma enhanced CVD methods using various plasma energy sources to generate plasma are effective for reducing the growth temperature and expanding the selection range of substrates.…”

“…The growth parameters using CVD with different energy source are summarized in Table 1 . It can be concluded that the obtained ND films from various CVD method are normally grown in a H 2 -rich, carbon-containing gas-lean mixture atmosphere under growth substrate temperature from 250 °C to 1200 °C [ 59 , 62 , 64 , 69 , 70 , 71 , 72 , 73 , 74 , 75 ]. Presumably the higher ratio of CH 4 in H 2 , the more non-diamond carbon incorporation quantity, and the smaller grain size of ND particle in ND film.…”