Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate

Abstract

Single crystal diamonds were deposited on high pressure high temperature (HPHT) substrate with high growth rate, up to 18.5 μm/h, by using dual radio-frequency inductive coupled plasma jet. The methane flux was found to influence the growth rate of single crystal diamond. The reason for this might be ascribed to the electron temperature increase, raising the flux of methane, based on the plasma diagnosis results by optical emission spectra (OES). The results of Raman spectroscopy and the X-ray rocking-curve indicated that as-deposited diamonds are of good quality.

An Ultra‐Simple Charge Supplementary Strategy for High Performance Rotary Triboelectric Nanogenerators

“…Atmospheric cold plasma has been well demonstrated to do pathogenic bacteria and fungi killing very effectively. [ 49–52 ] The sterilization mechanisms lie in the rich ROS generated during plasma stimulation using oxygen containing gases. [ 53,54 ] In this work, the sterilization efficiency of the plasma excited by the ps‐rTENG is investigated.…”