Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer <i>p</i>–<i>n</i> diode by substitutional doping

Okada, Mitsuhiro; Nagamura, Naoka; Matsumura, Takuya; Ando, Yasunobu; Lu, Anh Khoa Augustin; Okada, Naoya; Chang, Wen Hsin; Nakanishi, Takeshi; Shimizu, Tetsuo; Kubo, Toshitaka; Irisawa, Toshifumi; Yamada, Takatoshi

doi:10.1063/5.0070333

Cited by 10 publications

(14 citation statements)

References 67 publications

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“…During the growth, the pressure inside the chamber was maintained at 1 kPa. After the growth, the furnace was rapidly cooled to keep the sample from excess annealing and further adhering of the Na-containing compound . In the case of WS 2 growth onto hBN and SiO 2 /Si, at first, hBN flakes (HQ Graphene) were mechanically exfoliated onto the right half of an as-oxidized SiO 2 /Si using a 3M BK-24 tape at ambient condition.…”

Section: Methodsmentioning

confidence: 99%

“…After the growth, the furnace was rapidly cooled to keep the sample from excess annealing and further adhering of the Na-containing compound. 73 In the case of WS 2 growth onto hBN and SiO 2 /Si, at first, hBN flakes (HQ Graphene) were mechanically exfoliated onto the right half of an as-oxidized SiO 2 /Si using a 3M BK-24 tape at ambient condition. After the exfoliation, the substrates were annealed in air at 700 °C for 30 min to remove residual adhesives.…”

Section: Methodsmentioning

confidence: 99%

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Large-Scale 1T′-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition

Okada

Lin

et al. 2022

ACS Nano

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The control of crystal polymorphism and exploration of metastable, twodimensional, 1T′-phase, transition-metal dichalcogenides (TMDs) have received considerable research attention. 1T′-phase TMDs are expected to offer various opportunities for the study of basic condensed matter physics and for its use in important applications, such as devices with topological states for quantum computing, low-resistance contact for semiconducting TMDs, energy storage devices, and as hydrogen evolution catalysts. However, due to the high energy difference and phase change barrier between 1T′ and the more stable 2H-phase, there are few methods that can be used to obtain monolayer 1T′-phase TMDs. Here, we report on the chemical vapor deposition (CVD) growth of 1T′-phase WS 2 atomic layers from gaseous precursors, i.e., H 2 S and WF 6 , with alkali metal assistance. The gaseous nature of the precursors, reducing properties of H 2 S, and presence of Na + , which acts as a countercation, provided an optimal environment for the growth of 1T′-phase WS 2 , resulting in the formation of highquality submillimeter-sized crystals. The crystal structure was characterized by atomicresolution scanning transmission electron microscopy, and the zigzag chain structure of W atoms, which is characteristic of the 1T′ structure, was clearly observed. Furthermore, the grown 1T′-phase WS 2 showed superconductivity with the transition temperature in the 2.8−3.4 K range and large upper critical field anisotropy. Thus, alkali metal assisted gas-source CVD growth is useful for realizing large-scale, high-quality, phase-engineered TMD atomic layers via a bottom-up synthesis.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Large-Scale 1T′-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition

Okada

Lin

et al. 2022

ACS Nano

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“…Spatially resolved C 1s core-level photoelectron spectra were obtained using the 3D nano-ESCA system [13][14][15][16][17] as shown in figure 1(b). This equipment was installed at the soft x-ray beamline, BL07LSU, in SPring-8.…”

Section: Spectromicroscopy Analysismentioning

confidence: 99%

“…We employed a synchrotron soft x-ray scanning photoelectron microscope, called '3D nano-ESCA' [13], composed of a Fresnel zone plate (NTT-AT) for x-ray focusing and an angle resolved photoelectron analyzer (Scienta-Omicron R3000-EWAL). Surface chemical states and carrier distributions in atomic layer device structures have been clarified using this method [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Photoelectron spectromicroscopy analysis of graphene during gate-controlled photo-oxidation process

Nagamura

Konno²,

Matsumoto³

et al. 2022

Nano Ex.

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The analysis of chemical reactions in two-dimensional (2D) materials is becoming increasingly important for device applications. Typically, 2D materials are in the form of small flakes; therefore, local inhomogeneities between or within the flakes should be investigated. In this study, we investigated the gate-controlled UV photo-oxidation reaction of monolayer graphene sheets using field-effect transistor structures. We performed a surface characterization of the photo-oxidized graphene micro-sheets using an original scanning photoelectron microscopy system that enables element-selective electronic and chemical state analysis with a high spatial resolution. We succeeded for the first time in experimentally revealing the progression of the photo-oxidation reaction in graphene from the edge. During the photo-oxidation process, hole doping from the adsorbed molecules occurred first. The reaction proceeded selectively to the edges of the graphene sheets. Defects were then introduced by chemical reactions with adsorbed molecules, and finally the graphene sheets decomposed and disappeared.

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“…Semiconductor heterostructures play an important role in the development of modern low-dimensional physics and optical/electronic device applications. Recently, transition metal dichalcogenides (TMDCs) have attracted much attention due to their future device applications. − For their device applications, the use of in-plane heterostructures based on TMDCs provides a scalable way to create basic device structures, including pn junctions, semiconductor heterojunctions, and metal/semiconductor junctions. − Such structures have been used to demonstrate various devices, including field-effect transistors, pn diodes, photodetectors, and light-emitting diodes. Importantly, in-plane heterostructures can be prepared through scalable vapor-phase growth processes, such as chemical vapor deposition (CVD).…”

mentioning

confidence: 99%

Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics

et al. 2023

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In-plane heterostructures of transition metal dichalcogenides (TMDCs) have attracted much attention for high-performance electronic and optoelectronic devices. To date, mainly monolayer-based in-plane heterostructures have been prepared by chemical vapor deposition (CVD), and their optical and electrical properties have been investigated. However, the low dielectric properties of monolayers prevent the generation of high concentrations of thermally excited carriers from doped impurities. To solve this issue, multilayer TMDCs are a promising component for various electronic devices due to the availability of degenerate semiconductors. Here, we report the fabrication and transport properties of multilayer TMDC-based in-plane heterostructures. The multilayer in-plane heterostructures are formed through CVD growth of multilayer MoS2 from the edges of mechanically exfoliated multilayer flakes of WSe2 or Nb x Mo1–x S2. In addition to the in-plane heterostructures, we also confirmed the vertical growth of MoS2 on the exfoliated flakes. For the WSe2/MoS2 sample, an abrupt composition change is confirmed by cross-sectional high-angle annular dark-field scanning transmission electron microscopy. Electrical transport measurements reveal that a tunneling current flows at the Nb x Mo1–x S2/MoS2 in-plane heterointerface, and the band alignment is changed from a staggered gap to a broken gap by electrostatic electron doping of MoS2. The formation of a staggered gap band alignment of Nb x Mo1–x S2/MoS2 is also supported by first-principles calculations.

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Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping

Cited by 10 publications

References 67 publications

Large-Scale 1T′-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition

Large-Scale 1T′-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition

Photoelectron spectromicroscopy analysis of graphene during gate-controlled photo-oxidation process

Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics

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