Growth of MnGeP₂ Thin Films by Molecular Beam Epitaxy

Abstract

Epitaxial growth of the Mn-containing novel ternary compound MnGeP2 has been investigated. Prior to the growth experiments, theoretical studies using an ab initio calculation were carried out, on the basis of which the stable existence of MnGeP2 with a chalcopyrite structure was predicted. Growth experiments of Mn-Ge-P were performed on GaAs(001) and InP(001) substrates using a molecular beam epitaxy (MBE) technique, in which Mn and Ge were supplied from solid sources and P from a tertiary butyl phosphine (TBP) gas source. The optimum growth condition has been estimated on the basis of X-ray diffraction studies. Oriented overgrowth of MnGeP2 was confirmed from a reciprocal lattice mapping (RLM) on X-ray diffraction (XRD) analyses, and lattice constants have been determined to be a=0.569 nm and c=1.13 nm based on the assumption that the material has a tetragonal crystal structure.

Self‐assembled nanowhiskers grown by MBE on InP(001) surface

“…The peaks at 2θ ~ 30.5° and 2θ ~ 63.4° bear on 002 and 004 diffraction of InP substrates, respectively. The diffraction peak observed at 2θ ~ 66.04° may be assigned to the reflection from MnGeP 2 (008) [15,16]. Other peaks, which seem to be related to the MnP 111, MnP 202 and MnP 121 Fig.…”

“…The fabrication of self-assembled nanowhiskers was made possible by the development of the technology of MnGeP 2 thin film growth [15,16], that is chalcopyrite-type ternary compound [15][16][17].…”

Magnetic properties of manganese germanium diphosphide and manganese phosphide grown by molecular beam epitaxy technique

“…The Ge-buffer layer was deposited on GaAs (001) substrate at 380"C, followed by groyth of MnCePz and MnP at 435°C. Introduction of the Ge-bufTer have been known to improve the surface morphology of MnGePz film dramatically [4]. M-W curves were measured in these films using either a superconducting quantum interference device (SQUID) or a vibrating sample magnetometer (VSM).…”