MBE growth and TEM analyses in Mn–Ge–P compounds

Abstract

Pp, 81.15.Hi Ternary MnGeP 2 thin films have been grown on GaAs substrate using MBE technique. The films prepared at 435 °C showed ferromagnetism at room temperature. TEM observation revealed a segregation of MnP tile-shaped grains. Films grown at 585 °C showed no trace of ferromagnetic secondary phases in XRD profiles and were found to show no ferromagnetic behaviors down to 77 K. This is consistent with theoretical prediction that stoichiometric MnGeP 2 is antiferromagnetic, and our previous experimental results that the MnGeP 2 layer existing at the top of ZnGeP 2 : Mn has no contribution to ferromagnetic properties of the latter.