Growth of Mg2Si1−xGex layers on silicon–germanium substrates

Mizuyoshi, Yusuke; Yamada, R.; Ohishi, T.; Saito, Yoshiro; Koyama, Tadanobu; Hayakawa, Y.; Matsuyama, Tsuyoshi; Tatsuoka, Hirokazu

doi:10.1016/j.tsf.2005.07.331

Cited by 32 publications

(21 citation statements)

References 10 publications

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“…4, it is concluded that the overall Mg (and Si) content in the film is almost constant, resulting in a chemical composition of the silicide Mg:Si ¼ 2:1, with a slight depletion in Mg content for the first 15-20 mm of the grown layers. Similar deviation (excess or deficiency) in the nominal Mg content was found in growing Mg 2 Si or Mg 2 Ge layers using Si substrate under Mg vapor [16]. The deficiency in Mg content, at the early stages of growth, is maybe due to un-reacted Si.…”

Section: Morphology and Elemental Analysis Insupporting

confidence: 65%

Thermoelectric properties of Mg₂Si coatings deposited by pack cementation assisted process on heavily doped Si substrates

Stathokostopoulos

Stefanaki

Ιωάννου

et al. 2014

Physica Status Solidi (a)

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This work presents a study of structural and thermoelectric properties of Mg 2 Si coatings deposited on heavily doped p-and n-type Si substrates, at 650 8C. The as-grown layers were smooth and uniform in thickness without any texture, voids, or large density of cracks. The sign of Seebeck coefficient in deposited layers follows the one of the corresponding substrate, indicating effective doping of the grown layers with the dopant already present in Si substrate (B for p-type and As for n-type). Doping levels of $9 Â 10 18 cm À3 for p-type and $5 Â 10 18 cm À3 for n-type, were obtained. IR reflectivity analysis revealed a strong mode at 272 cm À1 and a shoulder at 316 cm À1 . Thermoelectric properties were successfully modeled by a multiple-band model, with optical phonon scattering. Temperature dependence of electrical conductivity for the deposition layers. The lines represent the theoretical fitting.

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Section: Morphology and Elemental Analysis Insupporting

confidence: 65%

Thermoelectric properties of Mg₂Si coatings deposited by pack cementation assisted process on heavily doped Si substrates

Stathokostopoulos

Stefanaki

Ιωάννου

et al. 2014

Physica Status Solidi (a)

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“…The synthesis of Mg 2 Si nanorod arrays depends on the interdiffusion of deposited Mg and Si from the substrate. It has been reported that the interdiffusion coefficient for the growth of Mg 2 Si on Si substrate at 500 °C is about 3 × 10 -10 cm 2 /s, which reveals that the growth of Mg 2 Si on Si substrate under Mg vapor is a controllable growth process [11]. Therefore, the reaction time is sufficient for complete conversion of Si nanorods to Mg 2 Si nanorods.…”

Section: Resultsmentioning

confidence: 99%

“…A schematic illustration of the heat treatment equipment used in this study was shown in Ref. [11]. The heat treatment was performed at the temperature of 500 °C for 10 min with the vacuum pressure of 10 -3 Torr.…”

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confidence: 99%

Synthesis of Mg₂Si nanorod arrays by the heat treatment of Si nanorod arrays under Mg vapor

Nakane

Suzuki

et al. 2013

Phys. Status Solidi C

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Periodic Mg2Si nanorod arrays were synthesized by the heat treatment of Si nanorod arrays with porous structure under Mg vapor. The structural properties of the Si and Mg2Si nanorods were investigated. The morphology of the Si nanorod arrays is preserved in the Mg2Si nanorod arrays. The diameter and height of the Mg2Si nanorods were significantly increased to 420 nm and 600 nm compared to those of the Si nanorods. The volumetric expansion from Si nanorods to Mg2Si nanorods is about V Mg 2Si/VSi = 1.55 and the density of Si nanorods with porous structure is about 48.3%. Periodic Mg2Si nanorod arrays will be useful to control thermal and/or solar radiation. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…A schematic illustration of the growth equipment used in this study was shown in Ref. [7]. As comparison, the nanowires were grown without the Au catalyst.…”

Section: Methodsmentioning

confidence: 99%

Synthesis of Si nanowires using Au catalyst accompanied with silicide nanoparticle formation

Meng

Nakane

et al. 2013

Phys. Status Solidi C

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Si nanowires were grown on Si(111) substrates, and the shape modification of the nanowires was demonstrated. With the Au catalyst, the highly symmetric faceted silicide solid particle in the Au‐Si eutectic solution was formed on the top of the nanowires, and the solid catalyst defined the shape of the Si nanowire. Namely, the VLS growth mechanism was followed by the VSS growth mechanism, and the modified shaped faceted Si nanowire was formed during the VSS growth. This result makes us to expect to control the shape of the nanowires by the formation of facetted silicide particles grown during the Au catalytic growth. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Growth of Mg2Si1−xGex layers on silicon–germanium substrates

Cited by 32 publications

References 10 publications

Thermoelectric properties of Mg₂Si coatings deposited by pack cementation assisted process on heavily doped Si substrates

Thermoelectric properties of Mg₂Si coatings deposited by pack cementation assisted process on heavily doped Si substrates

Synthesis of Mg₂Si nanorod arrays by the heat treatment of Si nanorod arrays under Mg vapor

Synthesis of Si nanowires using Au catalyst accompanied with silicide nanoparticle formation

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Growth of Mg2Si1−xGex layers on silicon–germanium substrates

Cited by 32 publications

References 10 publications

Thermoelectric properties of Mg2Si coatings deposited by pack cementation assisted process on heavily doped Si substrates

Thermoelectric properties of Mg2Si coatings deposited by pack cementation assisted process on heavily doped Si substrates

Synthesis of Mg2Si nanorod arrays by the heat treatment of Si nanorod arrays under Mg vapor

Synthesis of Si nanowires using Au catalyst accompanied with silicide nanoparticle formation

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Thermoelectric properties of Mg₂Si coatings deposited by pack cementation assisted process on heavily doped Si substrates

Thermoelectric properties of Mg₂Si coatings deposited by pack cementation assisted process on heavily doped Si substrates

Synthesis of Mg₂Si nanorod arrays by the heat treatment of Si nanorod arrays under Mg vapor