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The experimental glow‐curve of Al2O3:C is highly disturbed due to the strong thermal quenching effect present in this material. Therefore, the real glow‐curve shape of this material is unknown. The present work describes an attempt to reconstruct the glow‐curve shape of Al2O3:C samples with different TL peak structures. The reconstruction procedure is performed in two steps. In the first step, the very narrow glow‐curves are fitted with the product of known kinetic equations and the expression giving the thermal quenching efficiency. From this procedure the quenching parameters are estimated. Next, the experimental glow curves are reconstructed (corrected for thermal quenching) dividing them by the quenching efficiency using the evaluated parameters from the first step. This step was applied to all types of glow curve structures. It was found that the quenching parameters estimated from the above procedure for Al2O3:C are in very good agreement with those reported in the literature. The results indicate that the method can be used as an alternative method for the evaluation of the quenching parameters and the reconstruction of the real (without quenching) glow‐curves of various materials. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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This work presents a study of structural and thermoelectric properties of Mg 2 Si coatings deposited on heavily doped p-and n-type Si substrates, at 650 8C. The as-grown layers were smooth and uniform in thickness without any texture, voids, or large density of cracks. The sign of Seebeck coefficient in deposited layers follows the one of the corresponding substrate, indicating effective doping of the grown layers with the dopant already present in Si substrate (B for p-type and As for n-type). Doping levels of $9 Â 10 18 cm À3 for p-type and $5 Â 10 18 cm À3 for n-type, were obtained. IR reflectivity analysis revealed a strong mode at 272 cm À1 and a shoulder at 316 cm À1 . Thermoelectric properties were successfully modeled by a multiple-band model, with optical phonon scattering. Temperature dependence of electrical conductivity for the deposition layers. The lines represent the theoretical fitting.