Growth of long wavelength infrared MCT emitters on conductive substrates

Maxey, C. D.; Ahmed, M.U.; Jones, C. L.; Catchpole, R. A.; Capper, P.; Gordon, Neil T.; Houlton, M. R.; Ashley, T.

doi:10.1007/bf02665862

Cited by 11 publications

(10 citation statements)

References 8 publications

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“…Measured lifetimes of Cu-and Au-doped LWIR HgCdTe taken at DRS, and of arsenic-doped MWIR HgCdTe reported by Maxey et al, 9 are shown in Fig. 1, and are seemingly consistent with the calculations of Krishnamurthy and Casselman.…”

Section: Augersupporting

confidence: 76%

“…The remaining arsenic-doped data were reported by Maxey. 9 It is possible to fit the data either by the internal radiative mechanism, or by a SR center at the intrinsic level that varies in density as p. As the phenomenon is observed for extrinsic dopants on both the metal sublattice (Cu, Au), and the Te sublattice (arsenic), the S-R center argument is thought unlikely, and the measured lifetime is attributed to internal radiative.…”

Section: Internal Radiativementioning

confidence: 97%

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Minority carrier lifetime in p-HgCdTe

Kinch¹,

Aqariden²,

Chandra³

et al. 2005

Journal of Elec Materi

106

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High operating temperature (HOT) detector concepts using midwave infrared (MWIR) (x ϳ 0.3) p-type HgCdTe operating at temperatures within the thermoelectric cooler range are of significant interest at the present time. However, it is apparent that much work remains to be done in the areas of material, diode passivation, and diode formation technologies before the "holy grail" of photon detection at room temperature for all infrared wavelengths is achieved. Over the years, at DRS, we have developed a technology base for both n-and p-type HgCdTe materials parameters that are relevant to photodiode design and fabrication. This paper will discuss data that we have taken recently on minority carrier lifetime in MWIR and long wave infrared (LWIR) HgCdTe, particularly p type, and how it compares to current theories of Auger 7, radiative, and Shockley-Read recombination in this material. Extrinsic group IB (Cu, Au) and group V (arsenic) p-type dopants were used, together with group III (In) for n-type. The impact of the data on future HOT detector work is discussed.

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Section: Augersupporting

confidence: 76%

Section: Internal Radiativementioning

confidence: 97%

Minority carrier lifetime in p-HgCdTe

Kinch¹,

Aqariden²,

Chandra³

et al. 2005

Journal of Elec Materi

106

View full text Add to dashboard Cite

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“…The amphoteric model also predicts that the layers grown by Te-rich LPE and annealed under Te saturated conditions should have been n-type 2 and not the observed p-type. Previous reports [27][28][29] and results in the ''Results'' section, demonstrate that As can be active without the need for a high-temperature anneal when grown by MOVPE despite growth being close to the Te-rich phase boundary. Neither does the model explain why different As precursors give MOVPE MCT with such variable electrical properties, nor why MBE material grown using elemental As requires a high-temperature anneal to activate it whereas that grown with Cd 3 As 2 does not.…”

Section: Amphoteric Modelmentioning

confidence: 88%

“…Mitra et al 27 found the As to be 15% to 50% active after a Hg vacancyfilling anneal, which increased to near 100% if a high-temperature anneal was included. More recently Maxey et al 28,29 have reported $100% activation after vacancy annealing alone. Additionally, minority carrier lifetimes comparable with Hg-rich LPE 27 were achieved.…”

Section: Literature Review Of Arsenic Doping In Mctmentioning

confidence: 97%

As Doping in (Hg,Cd)Te: An Alternative Point of View

Hails

Irvine

Cole‐Hamilton

et al. 2008

Journal of Elec Materi

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Acceptor doping of many II-VI compound semiconductors has proved problematic and doping of epitaxial mercury cadmium telluride (MCT, Hg 1-x Cd x Te) with arsenic is no exception. High-temperature (>400°C) anneals followed by a lower temperature mercury-rich vacancy-filling anneal are frequently required to activate the dopant. The model frequently used to explain p-type doping with arsenic invokes an amphoteric nature of group V atoms in the II-VI lattice. This requires that group VI substitution with arsenic only occurs under mercury-rich conditions either during growth or the subsequent annealing and involves site switching of the As. However, there are inconsistencies in the amphoteric model and unexplained experimental observations, including arsenic which is 100% active as grown by metalorganic vapor-phase epitaxy (MOVPE). A new model, based on hydrogen passivation of the arsenic, is therefore proposed.

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“…Because of their direct band gap, semiconductors such as GaAs, InP and InSb are used for instance for light-emitting diodes, lasers and detectors [1][2][3]. Due to its narrow band gap (0.17 eV at room temperature), InSb is an important representative of this semiconductor group with wide applications in IR emission and detection [4,5] and in metal oxide semiconductor field effect transistors (MOSFETs) devices [6].…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of thin anodic oxide films on n-InSb(100) formed in aqueous solutions

et al. 2004

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Growth and characterization of thin anodic oxide films on n-InSb(100) formed in aqueous solutions Santinacci, L.; Sproule, G. I.; Moisa, S.; Landheer, D.; Wu, X.; Banu, A.; Djenizian, T.; Schmuki, P.; Graham, M. J.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12743949&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12743949&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1016/j.corsci. 2003.11.003 Corrosion Science, 46, 8, pp. 2067Science, 46, 8, pp. -2079Science, 46, 8, pp. , 2004 Growth and characterization of thin anodic oxide films on n-InSb (1 0 0) AbstractAnodic oxide films were galvanostatically grown on n-InSb(1 0 0) surfaces at various pH in sodium hydroxide (0.1 M NaOH, pH ¼ 13), borate buffer (0.075 M Na 2 B 4 O 7 + 0.3 M H 3 BO 3 , pH ¼ 8.4) and phosphate buffer (0.3 M NH 4 H 2 PO 4 , pH ¼ 4.4). Thickness, composition and morphology of the oxide films were determined by various surface analytical techniques such as Auger electron spectroscopy, X-ray photoelectron spectroscopy, scanning and transmission electron microscopy and atomic force microscopy. The oxides comprise mainly In 2 O 3 and Sb 2 O 3 and the oxide thickness increases with pH. Electrical properties of oxides indicate that the films may be useful as insulators in some device applications.

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Growth of long wavelength infrared MCT emitters on conductive substrates

Cited by 11 publications

References 8 publications

Minority carrier lifetime in p-HgCdTe

Minority carrier lifetime in p-HgCdTe

As Doping in (Hg,Cd)Te: An Alternative Point of View

Growth and characterization of thin anodic oxide films on n-InSb(100) formed in aqueous solutions

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