Growth of lead selenide thin films by the successive ionic layer adsorption and reaction (SILAR) technique

Abstract

This paper describes the growth of lead selenide (PbSe) thin films on glass and on ITO-covered glass substrates at room temperature under normal pressure utilising the successive ionic layer adsorption and reaction (SILAR) technique. Aqueous precursor solutions, lead acetate complexed with triethanolamine and sodium selenosulfate, were used for lead and selenide, respectively. The films were found to be metallic and adherent. The properties of the films were characterised by means of X-ray diffraction (XRD), Rutherford back-scattering spectrometry (RBS), nuclear reaction analysis (NRA) and scanning electron microscopy (SEM).

Successive Ionic Layer Adsorption and Reaction (SILAR) and Related Sequential Solution‐Phase Deposition Techniques

“…Also, the size of the counter -ion of the cation precursor may have an effect on the growth rate, as was observed in the deposition of PbS. 10 Proper pretreatment of the substrate has a notable role for good attachment of the thin fi lm to substrate as has been observed in deposition of ZnS and PbS fi lms by SILAR. 9,10 Temperature may also have a role in fi lm growth because of the higher mobility of ions in the precursor solutions and a more effi cient rinsing step.…”

“…1 The cation precursor can also be complexed by an organic ligand, which enables the choice of cation species by adjusting the pH of the solution. 9,10 In complexation, the metal ions are ideally situated in one chemical environment. Therefore, the deposition reaction is in better control than in uncomplexed reactions, where several different chemical species may exist.…”

“…1,9 The second type of SILAR equipment was developed by Kanniainen and Lindroos. 9,10 The equipment is controlled by a computer, with the substrate being moved from reaction to rinsing vessel by a laboratory xyz robot. The installation also allows the movement of the substrate in the rinsing and reaction vessels, which promotes fi lm growth and rinsing.…”

“…8.3 . 9,10 Ultrasonic -assisted rinsing has recently been introduced to SILAR to shorten the rinsing time and enhance the effectiveness of the rinsing step. A commercial ultrasonic bath with a frequency of 50 kHz and a power of 100 W has been used.…”

“…11 A method in which the precursor solutions are successively injected into a cell containing the substrate and rinsed in between has been used to analyze the morphology of SILAR -grown fi lms by atomic force microscopy (AFM). 10 Recently, this approach has been applied to the growth of core/shell nanocrystals by Li et al 12 …”