Growth of La0.7Sr0.3MnO3 films on Si(001) using SrMnO3 template layer

Dai, Hongyun; Wang, B.; Zhang, M.; Wang, R.Z.; Song, Xuemei; Du, Y.S.; Yan, Hui

doi:10.1016/j.vacuum.2005.12.002

Cited by 5 publications

(4 citation statements)

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“…There is a dilemma that a higher temperature is better for crystal growth from the viewpoint of thermodynamics, but an intermediate temperature is necessary to achieve p-type conductivity in SnO 2 films [3], and the incorporation of a buffer layer between the main film and the substrate may be a simple and feasible approach to solve the problem. And the highly oriented films growth by incorporating a homo-or hetero-seed (or buffer) layer between the film and the substrate has been achieved in many other oxides, such as ferroelectric and colossal magnetoresistance films [15,17,18]. The underlying mechanism of the seed layer affecting the preferential orientation of the oxide films have been well demonstrated by Schwartz et al [19,20].…”

Section: Resultsmentioning

confidence: 96%

“…This phenomenon has also been proved quantitatively by the texture coefficient, as shown in figure 1(b). The thickness-dependent preferential orientation has been observed in SnO 2 films grown by atmospheric pressure chemical vapour deposition [13] and in many other oxide and nitride films prepared by magnetron sputtering [15,16]. The underlying mechanism that determines the preferential orientation of SnO 2 : N film contains energy minimization of thermodynamics and selective evolution of dynamics and correlates with surface energy, strain energy and interface energy between the film and the substrate.…”

Section: Resultsmentioning

confidence: 99%

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Angle-dependent photoluminescence of [1 1 0]-oriented nitrogen-doped SnO₂films

Pan¹,

Ye²,

Teng³

et al. 2007

J. Phys. D: Appl. Phys.

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The orientation growth and angle-dependent photoluminescence (PL) of nitrogen-doped SnO 2 films grown on Si substrate by reactive magnetron sputtering have been studied. It was found that the orientation of the nitrogen-doped SnO 2 films depends strongly on their thickness, and a highly [1 1 0]-oriented film was achieved with a seed layer. An angle-dependent PL of the [1 1 0]-oriented films was observed, and the PL peak position shifts towards the longer wavelength side and the PL peak width decreases as the observation angle decreases. This angle-dependent PL was attributed to the Fabry-Pérot optical interference effect.

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Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

Angle-dependent photoluminescence of [1 1 0]-oriented nitrogen-doped SnO₂films

Pan¹,

Ye²,

Teng³

et al. 2007

J. Phys. D: Appl. Phys.

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“…LSMO-ZnO heterostructure has 6.78% PCE, where LSMO-STO has only 0.47% PCE. This indicates enhanced separation and collection of photo-generated charge carriers in LSMO-ZnO [16][17][18]. It also shows that short-circuit current in LSMO-ZnO is ∼10% higher than LSMO-STO.…”

Section: Numerical Simulationsmentioning

confidence: 84%

“…It shows that lattice mismatch between LSMO and ZnO is higher as compared with LSMO and STO, so a rough layer of LSMO will be grown over ZnO [16][17][18][19]. It can develop epitaxial…”

Section: Lattice Mismatchmentioning

confidence: 99%