Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition

Kadys, A.; Malinauskas, T.; Grinys, Tomas; Dmukauskas, M.; Mickevičius, J.; Aleknavičius, Justinas; Tomašiūnas, R.; Selskis, A.; Kondrotas, Rokas; Stanionytė, Sandra; Lugauer, H.‐J.; Straßburg, Martin

doi:10.1007/s11664-014-3494-6

Cited by 17 publications

(7 citation statements)

References 28 publications

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“…In 0.16 Ga 0.84 N samples were grown using continuous flow of precursors, while the InN and In-rich samples were grown using the interrupted growth method. The interrupted growth was used in order to decrease the unintentional n-type doping in InN layers and to prevent the indium segregation in indium-rich InGaN layers; for the detailed description of the growth procedures please refer to refs 19,23 . The thickness of layers was 75 nm for In 0.16 Ga 0.84 N, 200 nm for In 0.68 Ga 0.32 N and In 0.80 Ga 0.20 N, and 400 nm for InN.…”

Section: Methodsmentioning

confidence: 99%

Spectral dependence of THz emission from InN and InGaN layers

Norkus

Aleksiejūnas

Kadys

et al. 2019

Sci Rep

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Spectral dependence of terahertz emission is a sensitive tool to analyze the structure of conduction band of semiconductors. In this work, we investigate the excitation spectra of THz pulses emitted from MOCVD-grown InN and InGaN epitaxial layers with indium content of 16%, 68%, and 80%. In InN and indium-rich InGaN layers we observe a gradual saturation of THz emission efficiency with increasing photon energy. This is in stark contrast to other III-V semiconductors where an abrupt drop of THz efficiency occurs at certain photon energy due to inter-valley electron scattering. From these results, we set a lower limit of the intervalley energy separation in the conduction band of InN as 2.4 eV. In terms of THz emission efficiency, the largest optical-to-THz energy conversion rate was obtained in 75 nm thick In 0.16 Ga 0.84 N layer, while lower THz emission efficiency was observed from InN and indium-rich InGaN layers due to the screening of built-in field by a high-density electron gas in these materials.

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Section: Methodsmentioning

confidence: 99%

Spectral dependence of THz emission from InN and InGaN layers

Norkus

Aleksiejūnas

Kadys

et al. 2019

Sci Rep

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“…More details of the pulsed growth MOCVD can be found in Ref. [14]. Finally, a full LED structure with a top 40 nm thick p-type Al 0.1 Ga 0.9 N blocking layer and a 300 nm thick p-type GaN layer was grown (sample 3).…”

Section: Samples and Measurement Techniquesmentioning

confidence: 99%

Enhancement of quantum efficiency in InGaN quantum wells by using superlattice interlayers and pulsed growth

Nomeika¹,

Dmukauskas²,

Aleksiejūnas³

et al. 2016

Lith. J. Phys.

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Enhancement of internal quantum efficiency (IQE) in InGaN quantum wells by insertion of a superlattice interlayer and applying the pulsed growth regime is investigated by a set of time-resolved optical techniques. A threefold IQE increase was achieved in the structure with the superlattice. It was ascribed to the net effect of decreased internal electrical field due to lower strain and altered carrier localization conditions. Pulsed MOCVD growth also resulted in twice higher IQE, presumably due to better control of defects in the structure. An LED (light emitting diode) structure with a top p-type contact GaN layer was manufactured by using both growth techniques with the peak IQE equal to that in the underlying quantum well structure. The linear recombination coefficient was found to gradually increase with excitation due to carrier delocalization, and the latter dependence was successfully used to fit the IQE droop.

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“…The Ga-polar is the common polarity, and the Ga-polar GaN film can be grown by the metal-organic chemical vapor deposition (MOCVD) or the molecular beam epitaxy (MBE) on the sapphire (0001), Si (111), or the SiC substrates. [4][5][6][7][8][9][10][11] And the growth and the application of Gapolar GaN have been studied extensively and deeply. [6,[11][12][13][14][15][16][17] On the other hand, the N-polar is the rare polarity, and the Npolar GaN film has many advantages over the Ga-polar GaN film.…”

Section: Introductionmentioning

confidence: 99%

Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD

Hu¹,

Song²,

Su³

et al. 2022

Chinese Phys. B

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Gallium nitride (GaN) thin film of the nitrogen polarity (N-polar) was grown on C-plane sapphire and misoriented C-plane sapphire substrates respectively by metal-organic chemical vapor deposition (MOCVD). The misorientation angle is off-axis from C-plane toward M-plane of the substrates, and the angle is 2° and 4° respectively. The nitrogen polarity was confirmed by examining the images of the scanning electron microscope before and after the wet etching in potassium hydroxide (KOH) solution. The morphology was studied by the optical microscope and atomic force microscope. The crystalline quality was characterized by the X-ray diffraction. The lateral coherence length, the tilt angle, the vertical coherence length, and the vertical lattice-strain were acquired using the pseudo-Voigt function to fit the X-ray diffraction curves and then calculating with four empirical formulae. The lateral coherence length increases with the misorientation angle, because higher step density and shorter distance between adjacent steps can lead to larger lateral coherence length. The tilt angle increases with the misorientation angle, which means that the misoriented substrate can degrade the identity of crystal orientation of the N-polar GaN film. The vertical lattice-strain decreases with the misorientation angle. The vertical coherence length does not change a lot as the misorientation angle increases and this value of all samples is near to the nominal thickness of the N-polar GaN layer. This study helps to understand the influence of the misorientation angle of misoriented C-plane sapphire on the morphology, the crystalline quality, and the microstructure of N-polar GaN films.

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Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition

Cited by 17 publications

References 28 publications

Spectral dependence of THz emission from InN and InGaN layers

Spectral dependence of THz emission from InN and InGaN layers

Enhancement of quantum efficiency in InGaN quantum wells by using superlattice interlayers and pulsed growth

Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD

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