Growth of InAs/InP core–shell nanowires with various pure crystal structures

Ghalamestani, Sepideh Gorji; Heurlin, Magnus; Wernersson, Lars‐Erik; Lehmann, Sebastian; Dick, Kimberly A.

doi:10.1088/0957-4484/23/28/285601

Cited by 54 publications

(63 citation statements)

References 30 publications

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“…It has also been demonstrated that radial growth can be tuned to be selective to certain nanowire facets. [18][19][20] Controlling the crystal structure of different segments of the nanowire, and thereby, changing the surface energies of the segments formed along the axis would provide ideal templates for studying selective radial growth. In a number of studies it has been observed that the rate of radial growth strongly depends on the crystal phase of the nanowires, 17 attributed to their different surface energies.…”

Section: Introductionmentioning

confidence: 99%

Selective GaSb radial growth on crystal phase engineered InAs nanowires

et al. 2015

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In this work we have developed InAs nanowire templates, with designed zinc blende and wurtzite segments, for selective growth of radial GaSb heterostructures using metal organic vapor phase epitaxy. We find that the radial growth rate of GaSb is determined by the crystal phase of InAs, and that growth is suppressed on InAs segments with a pure wurtzite crystal phase. The morphology and the thickness of the grown shell can be tuned with full control by the growth conditions. We demonstrate that multiple distinct core-shell segments can be designed and realized with precise control over their length and axial position. Electrical measurements confirm that suppression of shell growth is possible on segments with wurtzite structures. This growth method enables new functionalities in structures formed by using bottom-up techniques, with complexity beyond that attainable by using top-down techniques.

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Section: Introductionmentioning

confidence: 99%

Selective GaSb radial growth on crystal phase engineered InAs nanowires

et al. 2015

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“…For the purpose of controlling and improving semiconducting nanowire (NW) devices for various applications1234567, an extensive research effort has been invested in studying NW growth; this was typically achieved by studying the different effects of user controlled parameters: (i) materials - including type and size of NW catalyst, the growth substrates and precursors, and (ii) by altering growth-system parameters, i.e., temperature and precursor flow891011121314151617. In the following report we present a new paradigm, that of catalyst shape engineering, as a useful tool to control NW growth results; in particular, we show that by imposing a non-hemispherical shape to the catalyst-substrate interface, anisotropic cross-sectioned NWs may be grown - NWs with potentially new physical characteristics.…”

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confidence: 99%

Catalyst shape engineering for anisotropic cross-sectioned nanowire growth

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Kelrich

Cohen

et al. 2017

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The ability to engineer material properties at the nanoscale is a crucial prerequisite for nanotechnology. Hereunder, we suggest and demonstrate a novel approach to realize non-hemispherically shaped nanowire catalysts, subsequently used to grow InP nanowires with a cross section anisotropy ratio of up to 1:1.8. Gold was deposited inside high aspect ratio nanotrenches in a 5 nm thick SiN x selective area mask; inside the growth chamber, upon heating to 455 °C, the thin gold stripes agglomerated, resulting in an ellipsoidal dome (hemiellipsoid). The initial shape of the catalyst was preserved during growth to realize asymmetrically cross-sectioned nanowires. Moreover, the crystalline nature of the nanowire side facets was found to depend on the nano-trench orientation atop the substrate, resulting in hexagonal or octagonal cross-sections when the nano-trenches are aligned or misaligned with the [110] orientation atop a [111]B substrate. These results establish the role of catalyst shape as a unique tool to engineer nanowire growth, potentially allowing further control over its physical properties.For the purpose of controlling and improving semiconducting nanowire (NW) devices for various applications 1-7 , an extensive research effort has been invested in studying NW growth; this was typically achieved by studying the different effects of user controlled parameters: (i) materials -including type and size of NW catalyst, the growth substrates and precursors, and (ii) by altering growth-system parameters, i.e., temperature and precursor flow [8][9][10][11][12][13][14][15][16][17] . In the following report we present a new paradigm, that of catalyst shape engineering, as a useful tool to control NW growth results; in particular, we show that by imposing a non-hemispherical shape to the catalyst-substrate interface, anisotropic cross-sectioned NWs may be grown -NWs with potentially new physical characteristics. Furthermore, we show that the combination of a non-hemispherical catalyst with different crystalline orientations of the long axis results in non-trivial side-faceting of the grown NWs. Nanowire cross section shape and faceting is expected to influence its electrical, mechanical, optical and chemical properties [18][19][20][21][22][23][24] . In particular, Foster et al. have shown that the emission of InGaAs quantum wells embedded inside selective-area-grown anisotropically cross-sectioned GaAs NWs, exhibited linear polarization aligned with the long cross-section axis; basically, when one cross-sectional length-scale is too small to support an optical mode, the spatial degeneracy is lifted and the photoluminescence becomes linearly polarized 22 . This work is an excellent reference for catalyst free growth of anisotropic cross-sectioned NWs, and will be discussed below in further detail. Similar results have been reported by Li et al., in regards to polarisation of laser emission from top-down fabricated GaN NWs 23 . In a different case, Mankin et al. have studied the reactivity of different facets of a VLS ...

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“…This considerable difference is due to two reasons. First, the equivalent facet orientation of nanowires in the ZB phase itself is different from (100), and they generally grow slower than (100) facets under the considered growth conditions (for example {110} and {112} face growth rate of the side facets of nanowires in WZ phase is inherently even lower than th equivalent, 44,52 making the actual thickness much lower than expected. However, the growth rate of the QWs seems to remain constant thickness with growth time.…”

Section: Experimental Methodsmentioning

confidence: 99%