Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy

Bourlange, A.; Payne, David J.; Egdell, R.G.; Foord, John S.; Edwards, Peter P.; Jones, Martin O.; Schertel, Andreas; Dobson, P.J.; Hutchison, J. L.

doi:10.1063/1.2889500

Cited by 103 publications

(88 citation statements)

References 20 publications

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“…The value of In 2 O 3 direct electronic band gap was recently revised to be ≤3 eV [29] and the low-energy tail which is seen below the absorption edge (Fig. 5) and which was previously attributed to indirect optical transitions, was found to be due to dipole forbidden transitions [29][30][31].…”

Section: Resultsmentioning

confidence: 99%

Epitaxial undoped indium oxide thin films: Structural and physical properties

Seiler

Nistor

Hébert

et al. 2013

Solar Energy Materials and Solar Cells

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is an open access repository that collects the work of Arts et Métiers ParisTech researchers and makes it freely available over the web where possible. Indium oxide thin films were grown by the pulsed electron beam deposition method on c-cut sapphire substrates at 10 −2 mbar oxygen pressure and temperature up to 500 1C. Such conditions lead to the formation of dense, smooth and stoichiometric In 2 O 3 films, with the cubic bixbyite structure. Epitaxial thin films were obtained at substrate temperatures as low as 200 1C. Pole figure measurements indicate the existence of (111) oriented In 2 O 3 crystallites with different in-plane symmetry, i.e. three-fold and six-fold symmetry. The origin of this effect may be related to the specificities of the growth method which can induce a large disorder in the oxygen network of In 2 O 3 , leading then to a six-fold symmetry in the (111) plane of the bixbyite structure. This temperature resistivity behaviour shows metallic conductivity at room temperature and a metal-semiconductor transition at low temperature for In 2 O 3 films grown at 200 1C, while the classical semiconductor behaviour was observed for the films grown at 400 and 500 1C. A maximum mobility of 24.7 cm 2 /V s was measured at 200 1C, and then it falls off with improving the crystalline quality of films. The optical transparency is high (480%) in a spectral range from 500 nm to 900 nm.

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Section: Resultsmentioning

confidence: 99%

Epitaxial undoped indium oxide thin films: Structural and physical properties

Seiler

Nistor

Hébert

et al. 2013

Solar Energy Materials and Solar Cells

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“…In particular, the significant size mismatch between the rather large metal cations and small oxygen anions in these compounds would naïvely be expected to make oxygen vacancies particularly important. In fact, with recent advances in growth techniques, particularly perhaps the advent of novel schemes of molecular beam epitaxy, it has become possible to grow thin-films of oxide materials, as required for device applications, with rather high structural quality [34][35][36][37][38][39][40]. Notwithstanding this, however, oxygen vacancies have long been [41], and commonly still are, attributed as the primary cause of conductivity in TCOs.…”

Section: Native Defectsmentioning

confidence: 99%

Conductivity in transparent oxide semiconductors

King

Veal

2011

J. Phys.: Condens. Matter

224

180

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Abstract. Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band-gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the presence of interstitial and substitutional species are still somewhat open questions, it is one of the leading contenders for unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case of conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total conductivity in TCOs. We discuss models that attempt to explain both the bulk and surface conductivity based on features of the bulk band structure common across the TCOs, and compare these materials to other semiconductors. Finally, we briefly consider transparency in these materials, and its interplay with conductivity. Understanding this interplay, as well as the microscopic contenders for the conductivity of these materials, will prove essential to the future design and control of TCO semiconductors, and their implementation into novel multifunctional devices.

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“…[28][29][30] In the case of hybrid-functional calculations we used supercells containing 72 and 80 atoms for SnO 2 and In 2 O 3 , respectively. Due to the high computational cost a systematic finite-size scaling using hybrid functionals is not yet feasible.…”

Section: A Computational Approachmentioning

confidence: 99%

Limits for n-type doping in In2O3 and SnO2: A theoretical approach by first-principles calculations using hybrid-functional methodology

Ágoston

Körber

Klein

et al. 2010

Journal of Applied Physics

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The intrinsic n-type doping limits of tin oxide ͑SnO 2 ͒ and indium oxide ͑In 2 O 3 ͒ are predicted on the basis of formation energies calculated by the density-functional theory using the hybrid-functional methodology. The results show that SnO 2 allows for a higher n-type doping level than In 2 O 3 . While n-type doping is intrinsically limited by compensating acceptor defects in In 2 O 3 , the experimentally measured lower conductivities in SnO 2 -related materials are not a result of intrinsic limits. Our results suggest that by using appropriate dopants in SnO 2 higher conductivities similar to In 2 O 3 should be attainable.

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Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy

Cited by 103 publications

References 20 publications

Epitaxial undoped indium oxide thin films: Structural and physical properties

Epitaxial undoped indium oxide thin films: Structural and physical properties

Conductivity in transparent oxide semiconductors

Limits for n-type doping in In2O3 and SnO2: A theoretical approach by first-principles calculations using hybrid-functional methodology

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