Growth of A‐plane (11‐20) In‐rich InGaN on R‐plane (10‐12) sapphire by RF‐MBE

Abstract

. Hg, 68.37.Hk, 68.55.Jk, 78.55.Cr, high In content (In-rich) InGaN was grown on R-plane (10-12) sapphire with an InN template by radio-frequency plasma assisted molecular beam epitaxy (RF-MBE). Nitridation of Rplane sapphire was carried out at 300 °C for 2 hours by RF-nitrogen plasma. A template of A-plane InN was grown at 400 °C. The In-rich InGaN films were then grown at the same temperature on the InN template. We characterized the films using reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM) and photo-luminescence (PL). These results indicated clearly that non-polar In 0.71 Ga 0.29 N was successfully obtained with a PL emission at approximately 1.1 eV.

High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE

“…Non-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) a-plane InGaN epilayers were grown on 200nm GaN/Al 2 O 3 (1-102) substrate using an Omicron Nanotechnology plasma assisted molecular beam epitaxy (PAMBE) system. Sapphire substrates were first degreased using trichloroethylene, etched using H 2 SO 4 :H 3 PO 4 (3:1) at 150 0 C for 20 min and rinsed with deionized water before loading into the molecular-beam epitaxy chamber.…”

“…Song et al studied the effect of periodicity of a-plane InGaN/ GaN multiple quantum wells on the output power of the LEDs grown by MOCVD. 18 In our attempt to grow self assembled non-polar high indium InGaN quantum dots for the fabrication of high efficiency and bright LEDs operating in longer-wavelength regions, we have succeeded to grow non-polar high indium InGaN clusters of micron dimensions over non-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) a-plane InGaN epilayers grown on 200nm GaN/Al 2 O 3 (1-102) substrate. Detailed investigation of the structural and optical properties of the structure is undertaken in this work.…”

“…16 First report of epitaxial growth of non-polar indium rich InGaN was on InN template on nitridated r-sapphire substrates. 17 Few reports are available in the literature for the study of the non polar InGaN based multiple quantum well (MQW) structures and other devices. Song et al studied the effect of periodicity of a-plane InGaN/ GaN multiple quantum wells on the output power of the LEDs grown by MOCVD.…”

“…To overcome such polarization effect, substrates oriented in non-polar directions i.e. (10-10) m-plane or (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) a-plane are used. Devices grown on these orientations are receiving a lot of focus due to this enhanced behavior; 7,8 however, a slight compromise in terms of quality has to be made because of the large in-plane mismatch between the lattice constants, thermal expansion coefficients and elastic constants of GaN and sapphire which leads to the generation of high densities of extended defects such as threading dislocations and basal plane stacking faults at the GaN-sapphire interface.…”

Photoluminescence and structural analysis of a-plane InGaN layers

“…However, the anisotropy of the surface plane makes the growth more demanding in comparison to c-plane growth. Nevertheless, there are reports on ð1 12 0Þ GaN layers grown on r-plane sapphire using different approaches and techniques [1][2][3][4][5] and on the growth of InGaN-QW on non-polar substrates [6,7]. In this paper, we report on MOVPE growth and characterization of non-polar InGaN layers, particularly on the incorporation of indium in thick layers and QWs.…”