Growth of highly conformal ruthenium-oxide thin films with enhanced nucleation by atomic layer deposition

Park, Ji Yoon; Yeo, Seungmin; Cheon, Taehoon; Kim, Soo Hyun; Kim, Min Kyu; Hong, Tae Eun; Lee, Do Joong

doi:10.1016/j.jallcom.2014.04.186

Cited by 17 publications

(16 citation statements)

References 25 publications

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“…The resistivities of the films before and after GLA at 0.7 J/cm 2 were 1.4 × 10 -3 and 7.6 × 10 -5 cm, respectively, with more than one order decrease after GLA. The conductivity of the films irradiated with GLA was similar or superior to that of previously reported solution-processed (2.9 × 10 -4 cm annealed at 700°C, 700 nm thick) [9] and vacuum-processed (4.0 × 10 -5 ~ 3.5 × 10 -4 cm) [3][4][5][6][7][8] RuO 2 thin films and only two times higher than that of the single crystal RuO 2 (3.6 × 10 -5 cm) [1]. In addition, the thickness of the films decreased as laser energy density of GLA increased, in correspondence to the resistivity change.…”

Section: Resultssupporting

confidence: 80%

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Highly conductive ruthenium oxide thin films by a low-temperature solution process and green laser annealing

Murakami

Shimoda

2015

Materials Letters

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Highly conductive ruthenium oxide (RuO 2) thin films were prepared by a low-temperature solution process combined with green laser annealing (GLA). The process allowed production of RuO 2 films at a low temperature of 250 °C. GLA led to effective sintering of the film, significantly improving crystallinity and film density and resulting in joining between grains, and consequently, the conductivity was dramatically increased by one order or more. The RuO 2 thin films show a low resistivity (e.g., 7.6 × 10-5 cm for a 40 nm-thick film), which was approximately 2 times of that of the single crystal RuO 2. Such resistivity has not been achieved only by thermal annealing, even at a high temperature of 800°C, after solution deposition, and is similar or lower to that of vacuum-deposited RuO 2 films.

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Section: Resultssupporting

confidence: 80%

“…The most commonly used routes for the fabrication of RuO 2 thin films have been sputtering [3,4], chemical vapor deposition [5,6], and atomic layer deposition [7,8]. However, these vacuum-deposition methods require expensive equipment, and therefore the manufacturing costs are high.…”

Section: Introductionmentioning

confidence: 99%

Highly conductive ruthenium oxide thin films by a low-temperature solution process and green laser annealing

Murakami

Shimoda

2015

Materials Letters

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“…In addition to the metals described above, the ALD of other metals, including Ru [204][205][206][207][208][209][210][211][212][213], Rh [63,[214][215][216], Co [175,217,218], Fe [175], Mo [219], and W [220][221][222][223], have been reported. However, the application of these metals to catalysis has thus far been limited.…”

Section: Other Metals Aldmentioning

confidence: 99%

“…Rh(acac) 3 is the commonly used precursor for Rh ALD[63,[214][215][216]. A wide variety of ALD Ru precursors have been explored including metallocenes, β-diketonates, and their derivatives[204][205][206][207][208][209][210][211][212]. Among these, the most widely studied and applied Ru ALD precursors are metallocenes and their .…”

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confidence: 99%

Atomic layer deposition—Sequential self-limiting surface reactions for advanced catalyst “bottom-up” synthesis

Elam

Stair

2016

Surface Science Reports

270

215

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Catalyst synthesis with precise control over the structure of catalytic active sites at the atomic level is of essential importance for the scientific understanding of reaction mechanisms and for rational design of advanced catalysts with high performance. Such precise control is achievable using atomic layer deposition (ALD). ALD is similar to chemical vapor deposition (CVD), except that the deposition is split into a sequence of two self-limiting surface reactions between gaseous precursor molecules and a substrate. The unique self-limiting feature of ALD allows conformal deposition of catalytic materials on a high surface area catalyst support at the atomic level. The deposited catalytic materials can be precisely constructed on the support by varying the number and type of ALD cycles. As an alternative to the wet-chemistry based conventional methods, ALD provides a cycle-by-cycle "bottom-up" approach for nanostructuring supported catalysts with near atomic precision. In this review, we summarize recent attempts to synthesize supported catalysts with ALD. Nucleation and growth of metals by ALD on oxides and carbon materials for precise synthesis of supported monometallic catalyst are reviewed. The capability of achieving precise control over the particle size of monometallic nanoparticles by ALD is emphasized. The resulting metal catalysts with high dispersions and uniformity often show comparable or remarkably higher activity than those prepared by conventional methods. For supported bimetallic catalyst synthesis, we summarize the strategies for controlling the deposition of the secondary metal selectively on the primary metal nanoparticle but not on the support to exclude monometallic formation. As a review of the surface chemistry and growth behavior of metal ALD on metal surfaces, we demonstrate the ways to precisely tune size, composition and structure of bimetallic metal nanoparticles. The cycle-by-cycle "bottom up" construction of bimetallic (or multiple components) nanoparticles with near atomic precision on supports by ALD is illustrated. Applying metal oxide ALD over metal nanoparticles can be used to precisely synthesize nanostructured metal catalysts. In this part, the surface chemistry of Al 2 O 3 ALD on metals is specifically reviewed. Next, we discuss the methods of tailoring the catalytic performance of metal catalysts including activity, selectivity and stability, through selective blocking of the low-coordination sites of metal nanoparticles, the confinement effect, and the formation of new metal-oxide interfaces. Synthesis of supported metal oxide catalysts with high dispersions and "bottom up" nanostructured photocatalytic architectures are also included. Therein, the surface chemistry and morphology of oxide ALD on oxides and carbon materials as well as their catalytic performance are summarized.

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“…Martinez et al [13] have investigated the structural, electronic and transport properties of RuO 2 nanotubes using the DFT method. Very recently, Park et al [14] have deposited the conductive and highly conformal RuO 2 thin films without nucleation delay using atomic layer deposition. They revealed that the formation of RuO 2 phase remains favorable with increasing oxygen partial flow rate and pulsing time, and also with decreasing precursor pulsing time and temperature.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure, optical properties and Compton profiles of RuO2: Performance of PBEsol exchange–correlation approximation

Sharma

Sahariya

Ahuja

2015

Journal of Alloys and Compounds

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Growth of highly conformal ruthenium-oxide thin films with enhanced nucleation by atomic layer deposition

Cited by 17 publications

References 25 publications

Highly conductive ruthenium oxide thin films by a low-temperature solution process and green laser annealing

Highly conductive ruthenium oxide thin films by a low-temperature solution process and green laser annealing

Atomic layer deposition—Sequential self-limiting surface reactions for advanced catalyst “bottom-up” synthesis

Electronic structure, optical properties and Compton profiles of RuO2: Performance of PBEsol exchange–correlation approximation

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