Atomic layer deposition—Sequential self-limiting surface reactions for advanced catalyst “bottom-up” synthesis

Abstract

Catalyst synthesis with precise control over the structure of catalytic active sites at the atomic level is of essential importance for the scientific understanding of reaction mechanisms and for rational design of advanced catalysts with high performance. Such precise control is achievable using atomic layer deposition (ALD). ALD is similar to chemical vapor deposition (CVD), except that the deposition is split into a sequence of two self-limiting surface reactions between gaseous precursor molecules and a substrate. The unique self-limiting feature of ALD allows conformal deposition of catalytic materials on a high surface area catalyst support at the atomic level. The deposited catalytic materials can be precisely constructed on the support by varying the number and type of ALD cycles. As an alternative to the wet-chemistry based conventional methods, ALD provides a cycle-by-cycle "bottom-up" approach for nanostructuring supported catalysts with near atomic precision. In this review, we summarize recent attempts to synthesize supported catalysts with ALD. Nucleation and growth of metals by ALD on oxides and carbon materials for precise synthesis of supported monometallic catalyst are reviewed. The capability of achieving precise control over the particle size of monometallic nanoparticles by ALD is emphasized. The resulting metal catalysts with high dispersions and uniformity often show comparable or remarkably higher activity than those prepared by conventional methods. For supported bimetallic catalyst synthesis, we summarize the strategies for controlling the deposition of the secondary metal selectively on the primary metal nanoparticle but not on the support to exclude monometallic formation. As a review of the surface chemistry and growth behavior of metal ALD on metal surfaces, we demonstrate the ways to precisely tune size, composition and structure of bimetallic metal nanoparticles. The cycle-by-cycle "bottom up" construction of bimetallic (or multiple components) nanoparticles with near atomic precision on supports by ALD is illustrated. Applying metal oxide ALD over metal nanoparticles can be used to precisely synthesize nanostructured metal catalysts. In this part, the surface chemistry of Al 2 O 3 ALD on metals is specifically reviewed. Next, we discuss the methods of tailoring the catalytic performance of metal catalysts including activity, selectivity and stability, through selective blocking of the low-coordination sites of metal nanoparticles, the confinement effect, and the formation of new metal-oxide interfaces. Synthesis of supported metal oxide catalysts with high dispersions and "bottom up" nanostructured photocatalytic architectures are also included. Therein, the surface chemistry and morphology of oxide ALD on oxides and carbon materials as well as their catalytic performance are summarized.

Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

“…Furthermore, since ALD is dominated by a self-limiting growth mechanism, lm thickness and composition can be precisely controlled even on large-area substrates, and its good step coverage with excellent lm conformity can be extremely benecial in various applications. [8][9][10] To exploit the advantages of these remarkable features of the ALD process, various oxide semiconductors, such as ZnO, [11][12][13] In-O, 14 In-Zn-O, 6 and ZnSn-O, 15 have been prepared by the ALD process for TFT applications. TFTs with ALD-grown ZnO channels have been extensively investigated during the early developmental stages of oxide TFTs.…”

Review Article: Catalysts design and synthesis via selective atomic layer deposition

“…This might be due to the low coordinated sites were more active to react with TTIP precursors than terrace sites and facets. In fact, the oxide growth behavior is also affected with the choice of precursors, Biener and coworkers reported that using TiCl 4 and H 2 O to grow TiO 2 films with 10 cycles on Au tended to form continuous and smooth coatings. 87 The continuous coating completely encapsulated the Au surfaces resulted in the rapid disappearing of activity in CO oxidation.…”

“…The reactivity of precursors is a key factor to influence the selective growth sequences and behaviors on metals. We recently reported a facet selective ALD method, 41 by which cerium oxide {tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato) cerium(IV) [Ce(thd) 4 ] and O 3 as precursors} had been utilized to form nanofences around Pt NPs (shown in Fig. 9).…”

“…1- 4 The catalytic performance of composite catalysts strongly depends on their size, heterointerfaces, active sites, etc. [5][6][7] To design and obtain catalysts with the desired activity, selectivity, and stability, synthesis strategies to build precise configurations with direct modulation of reactive sites are of great importance.…”

Strain engineering of H/transition metal systems

“…This behaviour can be induced by growing thick metallic layers on top of a support layer with a different lattice constant using, for example, repeated atomic layer deposition cycles [12], or by mechanically applying surface-parallel strain to the system [13]. This technology is established in the semiconductor and metal-oxide-semiconductor field [14] but is less well understood for purely metallic surfaces.…”