Growth of high-quality one-inch free-standing heteroepitaxial (001) diamond on (112¯0) sapphire substrate

Kim, Seong-Woo; Kawamata, Yuki; Takaya, Ryota; Koyama, Koji; Kasu, Makoto

doi:10.1063/5.0024070

Cited by 36 publications

(24 citation statements)

References 37 publications

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“…The largest single-crystal diamond substrate has been reported to have a diameter of ~3.5-inches based on Ir/YSZ/Si [8]. ® Other groups have reported 2-inch-scale substrates labs also using Ir hetereoepitaxy [9,10]. However, the crystalline quality is still worse than that of HPHT (commonly dislocation density of 10 7 to 10 9 cm −2 in heteroepitaxy growth) [11][12][13].…”

Section: Diamond Substratesmentioning

confidence: 99%

Diamond for Electronics: Materials, Processing and Devices

et al. 2021

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Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the device technology as a result of its very high mechanical hardness and smaller size of substrates. As a result, diamond is still not considered a reference material for power electronic devices despite its superior Baliga’s figure of merit with respect to other WBG materials. This review paper will give a brief overview of some scientific and technological aspects related to the current state of the main diamond technology aspects. It will report the recent key issues related to crystal growth, characterization techniques, and, in particular, the importance of surface states aspects, fabrication processes, and device fabrication. Finally, the advantages and disadvantages of diamond devices with respect to other WBG materials are also discussed.

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Section: Diamond Substratesmentioning

confidence: 99%

Diamond for Electronics: Materials, Processing and Devices

et al. 2021

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“…With Au stripe masks on the diamond surface, the stress decreased significantly, and the dislocation density was below 10 8 cm −2 [22]. Kim et al fabricated a one-inch free-standing heteroepitaxial (001) diamond with a dislocation density of 1.4 × 10 7 cm −2 [23]. Mehmel et al used micrometric laser-pierced hole arrays to reduce dislocation densities [24].…”

Section: Introductionmentioning

confidence: 99%

Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation

et al. 2022

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A lower dislocation density substrate is essential for realizing high performance in single-crystal diamond electronic devices. The in-situ tungsten-incorporated homoepitaxial diamond by introducing tungsten hexacarbonyl has been proposed. A 3 × 3 × 0.5 mm3 high-pressure, high-temperature (001) diamond substrate was cut into four pieces with controlled experiments. The deposition of tungsten-incorporated diamond changed the atomic arrangement of the original diamond defects so that the propagation of internal dislocations could be inhibited. The SEM images showed that the etching pits density was significantly decreased from 2.8 × 105 cm−2 to 2.5 × 103 cm−2. The reduction of XRD and Raman spectroscopy FWHM proved that the double-layer tungsten-incorporated diamond has a significant effect on improving the crystal quality of diamond bulk. These results show the evident impact of in situ tungsten-incorporated growth on improving crystal quality and inhibiting the dislocations propagation of homoepitaxial diamond, which is of importance for high-quality diamond growth.

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“…However, the dislocations [11][12][13][14] and stress [15,16] in diamond films are still a major issue in developing large and high-quality diamonds. In order to improve these phenomena, several techniques have been used [17][18][19][20][21][22][23][24]. The remarkable functional properties of diamonds depend not only on their physical and chemical properties but also on their surface morphology.…”

Section: Introductionmentioning

confidence: 99%

Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

et al. 2021

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Homoepitaxial growth of step-flow single crystal diamond was performed by microwave plasma chemical vapor deposition system on high-pressure high-temperature diamond substrate. A coarse surface morphology with isolated particles was firstly deposited on diamond substrate as an interlayer under hillock growth model. Then, the growth model was changed to step-flow growth model for growing step-flow single crystal diamond layer on this hillock interlayer. Furthermore, the surface morphology evolution, cross-section and surface microstructure, and crystal quality of grown diamond were evaluated by scanning electron microscopy, high-resolution transmission electron microcopy, and Raman and photoluminescence spectroscopy. It was found that the surface morphology varied with deposition time under step-flow growth parameters. The cross-section topography exhibited obvious inhomogeneity in crystal structure. Additionally, the diamond growth mechanism from the microscopic point of view was revealed to illustrate the morphological and structural evolution.

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Growth of high-quality one-inch free-standing heteroepitaxial (001) diamond on (112¯0) sapphire substrate

Cited by 36 publications

References 37 publications

Diamond for Electronics: Materials, Processing and Devices

Diamond for Electronics: Materials, Processing and Devices

Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation

Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

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