Growth of hexagonal ZnCdS on GaAs(1 1 1)B and (0 0 1) substrates by MBE

Umeya, H.; Kitamura, Keiichi; Jia, A.W.; Shimotomai, M.; Kato, Yoshiaki; Kobayashi, Masakazu; Yoshikawa, Akihiko; Takahashi, Kazuhiro

doi:10.1016/s0022-0248(00)00074-9

Cited by 12 publications

(5 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Numerous evidences for the epitaxial stabilization of otherwise unstable compounds or polymorphous forms appeared in recent years as well: bcc-Ni 0.3 Fe 0.7 , 17 hcpand bcc-Cu and Pd, 18 GaN with zinc blend, 19 cubic 20 and wurtzite structure, [21][22][23] cubic nitrides AlN, [24][25][26] TaN, 27 CrN 0.6 , 28 and (Cd,Zn)S with wurtzite 29 and sphalerite structure. 30 Profound thermodynamical analysis of epitaxy of otherwise unstable compounds was provided in the 1980-90s by Zangwill and co-workers [31][32][33] and Zunger and Wood.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Epitaxial Stabilization of Oxides in Thin Films

et al. 2002

View full text Add to dashboard Cite

A survey of recent experimental results is given, presenting the growth of oxide epitaxial thin films in P−T−x conditions, which are far from those necessary for the existence of corresponding phases in a bulk state. The unstable in bulk BaCu3O4, NdMn7O12, RNiO3, and unusual polymorphous forms of BaRuO3, RMnO3, TiO2, and Mn3O4 are some examples. The stabilizing effect is observed only if epitaxial growth is induced. A rich variety of the effect observations are demonstrated to be of a thermodynamic origin, rather than of a kinetic one. Epitaxial stabilization is shown to be the result of the low energy of coherent interfaces formed due to epitaxy.

show abstract

Section: Introductionmentioning

confidence: 99%

“…Numerous evidences for the epitaxial stabilization of otherwise unstable compounds or polymorphous forms appeared in recent years as well: bcc-Ni 0.3 Fe 0.7 , hcp- and bcc-Cu and Pd, GaN with zinc blend, cubic and wurtzite structure, − cubic nitrides AlN, − TaN, CrN 0.6 , and (Cd,Zn)S with wurtzite and sphalerite structure …”

Section: Introductionmentioning

confidence: 99%

Epitaxial Stabilization of Oxides in Thin Films

et al. 2002

View full text Add to dashboard Cite

show abstract

“…The II-VI compounds, CdS (E g = 2.42 eV) and ZnS (E g = 3.65 eV) have proved to be useful for the fabrication of a wide range of optoelectronic devices. Cd x Zn 1−x S films have been prepared by a variety of methods, including spray pyrolysis [1][2][3], co-evaporation [4,5], chemically deposited [6], molecular beam epitaxy (MBE) [7][8][9], chemical method synthesize [10], contactfree technique [11]. Among these, the spray pyrolysis method is cheaper, simpler and more versatile than the others and gives the possibility of obtaining films with suitable properties for optoelectronic applications and also when large areas are needed.…”

Section: Introductionmentioning

confidence: 99%

Effect of indium incorporation on the optical properties of spray pyrolyzed Cd0.22Zn0.78S thin films

et al. 2006

View full text Add to dashboard Cite

In this study, effect of indium incorporation on the optical properties is investigated for the spray pyrolyzed onto glass substrates at 275 • C substrate temperature undoped and indium doped Cd0.22Zn0.78S thin films. The average optical transmittance of all the films was over 77% in the wavelength range between 450 and 800 nm. The optical band gap energies of the thin films have been investigated by the measurement of the optical absorbance as a function of wavelength. The optical absorption studies reveal that the transitions are direct band gaps of 3.02 and 3.05 eV for undoped and doped indium Cd0.22Zn0.78S thin films, respectively. The Urbach tail parameter and optical constants such as refractive index, extinction coefficient, and dielectric constants were calculated for these films. The dispersion parameters such as single-oscillator energy and dispersive energy were discussed in terms of the single-oscillator Wemple-DiDomenico model. PACS : 78.20.Ci

show abstract

“…Until now, we have proposed ZnMgCdOSSe hexagonal binary/ternary/quaternary mixed crystal systems fabricated on (111) planes of GaAs and InP substrates for long-lifetime shortwavelength light emitting devices [4,7]. We have also reported the MBE growth of hexagonal ZnCdS epilayers lattice matched to GaAs(111) substrate [8].…”

Section: Introductionmentioning

confidence: 99%

MBE Growth and Characterization of Hexagonal ZnCdSe Layers on GaAs(111)-A and -B Substrates

Suzuki

Nemoto

Kaifuchi

et al. 2002

phys. stat. sol. (a)

View full text Add to dashboard Cite

Jk; 81.05.Dz; 81.15.Hi Zn 0.5 Cd 0.5 Se epilayers were grown on GaAs(111)-A and -B substrates by MBE. We investigated how the polarity of the substrate affects both the epilayer crystalline structure and quality. It was found that the epilayers consisted of hexagonal and cubic phases independent of the substrate polarity. The hexagonal phase content in the epilayers tended to be minimal at a growth temperature around 300 C; it increased with decreasing growth temperature in the range of 200-300 C and increased again above 300 C. The hexagonal phase content in the epilayers grown on the (111)-B face was relatively high compared with that on the (111)-A face. However, the crystalline quality of the epilayers grown on the (111)-A face was much better. Furthermore, the hexagonal phase content increased for both (111)-A and -B faces with increasing VI/II beam flux ratio. In that case, the epilayer quality was improved on (111)-A face, though it tended to become poor on (111)-B face.

show abstract

Growth of hexagonal ZnCdS on GaAs(1 1 1)B and (0 0 1) substrates by MBE

Cited by 12 publications

References 6 publications

Epitaxial Stabilization of Oxides in Thin Films

Epitaxial Stabilization of Oxides in Thin Films

Effect of indium incorporation on the optical properties of spray pyrolyzed Cd0.22Zn0.78S thin films

MBE Growth and Characterization of Hexagonal ZnCdSe Layers on GaAs(111)-A and -B Substrates

Contact Info

Product

Resources

About