MBE Growth and Characterization of Hexagonal ZnCdSe Layers on GaAs(111)-A and -B Substrates

Suzuki, Satoshi; Nemoto, Tadashi; Kaifuchi, Yoshikazu; Ishitani, Yoshihiro; Yoshikawa, Akira

doi:10.1002/1521-396x(200207)192:1<195::aid-pssa195>3.0.co;2-8

Cited by 3 publications

(3 citation statements)

References 11 publications

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“…2 Author to whom any correspondence should be addressed. be improved by replacing the normally cubic-structured active layer with a hexagonal one [9]. ZnSe 1D structures have been studied extensively due to their significant importance in basic science and practical applications [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Wurtzite ZnSe nanowires: growth, photoluminescence, and single-wire Raman properties

Shan

Liu²,

Zhang

et al. 2006

Nanotechnology

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Wurtzite ZnSe nanowires were prepared on GaAs substrates in a metal-organic chemical vapour deposition system. Electron microscopy shows that they are smooth and uniform in size. Both transmission electron microscopy and x-ray diffraction reveal the wurtzite structure of the nanowires, which grows along the [Formula: see text] direction. Raman scattering studies on individual nanowires were performed in the back-scattering geometry at room temperature. Besides the commonly observed longitudinal and transverse optical phonon modes, a possible surface mode located at 233 cm(-1) is also observed in the Raman spectrum. A peak located at 2.841 eV was clearly observed in the photoluminescence spectra of the nanowires, which can be assigned to near band edge emissions of wurtzite ZnSe.

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Section: Introductionmentioning

confidence: 99%

Wurtzite ZnSe nanowires: growth, photoluminescence, and single-wire Raman properties

Shan

Liu²,

Zhang

et al. 2006

Nanotechnology

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“…3 Results and discussion First, it was found that the hexagonal phase purity of Zn 0.5 Cd 0.5 Se epilayers was improved by inserting LT-CdS buffer layers in preliminary experiments. The maximum values of hexagonal phase purities in Zn 0.5 Cd 0.5 Se epilayers without LT-buffer were 42% for the (111)A surface and 82% for the (111)B surface [5]. While, those in Zn 0.5 Cd 0.5 Se epilayers with LT-buffer were 70% and 95% for the (111)A and B surfaces, respectively.…”

Section: Introductionmentioning

confidence: 88%

“…Until now, we have grown hexagonal ZnCdSe epilayers on GaAs(111) substrates by molecular beam epitaxy (MBE) for the green light emitting device applications, and reported that the cubic phase was incorporated into the hexagonal epilayers [5]. However, if the hexagonal phase purity of ZnCdSe epilayers can be improved, a hexagonal ZnCdSe/ZnCdMgSe quantum well (QW) structure becomes one of the suitable green LD structures.…”

Section: Introductionmentioning

confidence: 99%

MBE growth and characterization of hexagonal ZnCdMgSe layers and ZnCdSe/ZnCdMgSe QW structures on GaAs (111) substrates

Suzuki

Kaifuchi

Kumada

et al. 2004

Physica Status Solidi (b)

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ZnCdMgSe epilayers and ZnCdSe/ZnCdMgSe quantum well structures were grown on GaAs(111)A and B substrates by MBE using a low-temperature-grown CdS buffer layer. X-ray reciprocal space maps demonstrated that ZnCdMgSe epilayers grown on CdS buffer layers were predominantly hexagonal structures. In the quantum well structures, in-situ RHEED pattern also demonstrated the hexagonal structure during the growth. X-ray diffraction results showed that the crystalline quality of the ZnCdMgSe epilayers grown on GaAs(111)A surface was much better than that on the (111)B surface. Low temperature photoluminescence of ZnCdMgSe epilayers were dominated by the deep and shallow donor-acceptor pair emissions for the case of GaAs(111)A and B, respectively. The peak energy positions of the photoluminescence spectra increased with increasing the growth temperature. Although strong emissions from ZnCdMgSe barriers were observed, emissions from the ZnCdSe QW structure were very weak. IntroductionThe II-VI compound-based materials system is still one of the best choices for the green light emitting devices especially for laser diodes (LDs) even when considering the nitride materials system. However, the lifetime of LDs fabricated by II-VI compounds has been short and limited by the generation and propagation of extended defects [1]. Since hexagonal wurtzite structures have lower symmetry and fewer gliding planes than cubic zincblende structures, the dislocation should not move easily [2] and should be confined to lattice planes parallel to the interface between epilayers and substrates in hexagonal structures [3]. Therefore, hexagonal II-VI compound-based materials may be a plausible candidate to realize long-lifetime LDs [4] 1 . Until now, we have grown hexagonal ZnCdSe epilayers on GaAs(111) substrates by molecular beam epitaxy (MBE) for the green light emitting device applications, and reported that the cubic phase was incorporated into the hexagonal epilayers [5]. However, if the hexagonal phase purity of ZnCdSe epilayers can be improved, a hexagonal ZnCdSe/ZnCdMgSe quantum well (QW) structure becomes one of the suitable green LD structures.Therefore, we improved the hexagonal phase purity of ZnCdSe epilayers by insertion of a lowtemperature-grown (LT) CdS buffer layer, and carried out MBE growth and characterization of hexagonal ZnCdMgSe epilayers with the LT-CdS buffer layer on GaAs(111)A and B substrates. The reason why we used GaAs(111)A and B substrates is that we investigated how the polarity of the substrates affects structural and optical properties of ZnCdMgSe epilayers. Furthermore, we fabricated hexagonal

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Two-dimensional X-ray diffraction characterization of (Zn,Cd,Mg)Se wurtzite layers grown on Bi2Se3

Hernandez-Mainet

Chen

Garcia

et al. 2016

Journal of Crystal Growth

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The wurtzite structure of ZnSe, Zn 0.49 Cd 0.51 Se and Zn 0.23 Cd 0.25 Mg 0.52 Se layers grown on Bi 2 Se 3 /sapphire (0001) by Molecular Beam Epitaxy (MBE) is reported. Structure characterization is studied by two-dimensional X-ray diffraction. Pole figures are calculated for cubic and hexagonal planes of the (Zn,Cd,Mg)Se family and compared to their expected values. The targeted wurtzite plane was (11-22), while the cubic ones were the (220) and (311). The results show that, under our MBE growth conditions, ZnSe, Zn 0.49 Cd 0.51 Se and Zn 0.23 Cd 0.25 Mg 0.52 Se layers prefer to form the hexagonal (wurtzite) phase rather than the cubic one when grown on Bi 2 Se 3 /sapphire in (0001) direction. These results have implications for the next generation devices combining semiconductors and topological insulator materials.

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MBE Growth and Characterization of Hexagonal ZnCdSe Layers on GaAs(111)-A and -B Substrates

Cited by 3 publications

References 11 publications

Wurtzite ZnSe nanowires: growth, photoluminescence, and single-wire Raman properties

Wurtzite ZnSe nanowires: growth, photoluminescence, and single-wire Raman properties

MBE growth and characterization of hexagonal ZnCdMgSe layers and ZnCdSe/ZnCdMgSe QW structures on GaAs (111) substrates

Two-dimensional X-ray diffraction characterization of (Zn,Cd,Mg)Se wurtzite layers grown on Bi2Se3

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