Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

Yang, Xu; Nitta, Shugo; Nagamatsu, Kentaro; Bae, Si‐Young; Lee, Hojun; Liu, Yuhuai; Pristovsek, Markus; Honda, Yoshio; Amano, Hiroshi

doi:10.1016/j.jcrysgro.2017.10.036

Cited by 51 publications

(63 citation statements)

References 37 publications

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“…Growing on sapphire it is much more challenging to produce continuous ultra-thin films of mono– or bi-layer thickness, and as such, most reports demonstrate films from few to tens of nanometers thick 20 , 26 , 27 . The formation of large hexagonal wrinkles has also been observed in BN grown on sapphire due to the thermal expansion mismatch between BN and the substrate 20 , 28 . These features make BN films grown on sapphire distinct from those on metals.…”

Section: Introductionmentioning

confidence: 91%

Wafer scale BN on sapphire substrates for improved graphene transport

Vangala

Siegel

Prusnick

et al. 2018

Sci Rep

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Wafer scale (2”) BN grown by metal organic chemical vapor deposition (MOCVD) on sapphire was examined as a weakly interacting dielectric substrate for graphene, demonstrating improved transport properties over conventional sapphire and SiO2/Si substrates. Chemical vapor deposition grown graphene was transferred to BN/sapphire substrates for evaluation of more than 30 samples using Raman and Hall effects measurements. A more than 2x increase in Hall mobility and 10x reduction in sheet carrier density was measured for graphene on BN/sapphire compared to sapphire substrates. Through control of the MOCVD process, BN films with roughness ranging from <0.1 nm to >1 nm were grown and used to study the effects of substrate roughness on graphene transport. Arrays of graphene field effect transistors were fabricated on 2” BN/sapphire substrates demonstrating scalability and device performance enhancement.

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Section: Introductionmentioning

confidence: 91%

Wafer scale BN on sapphire substrates for improved graphene transport

Vangala

Siegel

Prusnick

et al. 2018

Sci Rep

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“…In this respect, wafer‐scale thin‐film growth methods, such as CVD or molecular beam epitaxy (MBE), are preferable to realize device applications. Many research groups have reported thermal CVD of BN thin films with a wide variety of boron precursors, such as borazine (B 3 N 3 H 6 ), boron‐halides (BF 3 , BCl 3 , and BBr 3 ), and triethyl boron ((C 2 H 5 ) 3 B, TEB), on sapphire, SiC, Ni, and Cu substrates. For borazine, it is difficult to control the N/B ratio, which leads to turbostratic boron nitride ( t ‐BN), a disordered phase of h ‐BN.…”

Section: Introductionmentioning

confidence: 99%

Chemical Vapor Deposition Growth of BN Thin Films Using B₂H₆ and NH₃

Yamada

Inotsume

Kumagai

et al. 2019

Physica Status Solidi (b)

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The use of chemical vapor deposition (CVD) for the growth of BN thin films on Al 2 O 3 substrates using B 2 H 6 and NH 3 is investigated. The simultaneous supply of B 2 H 6 and NH 3 at a growth temperature of 1360 C under a pressure of 100 mbar results in a rough surface, indicating 3D island growth, regardless of the V/III ratio. Furthermore, a significant decrease in growth rate is observed at high V/III ratios, owing to parasitic reactions between the B 2 H 6 and NH 3 sources. In contrast, alternating the supply of B 2 H 6 and NH 3 results in BN films with honeycomb-like wrinkle patterns. The X-ray diffraction peak intensities from the (002) and (004) planes of hexagonal boron nitride (h-BN) increase as the number of supply cycles is increased. The BN film deposited with 1000 supply cycles shows a Raman shift at 1369 cm À1 with a full width at half maximum of 20 cm À1 , corresponding to the first-order E 2g symmetry vibrational mode in h-BN.

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“…Hexagonal boron nitride (h-BN) has attracted much interest due to its interesting fundamental properties and potential applications for deep-ultraviolet (DUV) optoelectronic materials, [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] solid state neutron detectors, [17][18][19][20][21][22] single photon emitters, 23,24 and graphene heterojunction devices. 25 Detectors fabricated from Boron-10 enriched h-BN epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors to date of 58%.…”

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confidence: 99%

Origin and roles of oxygen impurities in hexagonal boron nitride epilayers

Grenadier

Maity

et al. 2018

Applied Physics Letters

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Photoluminescence emission spectroscopy and electrical transport measurements have been employed to study the origin and roles of oxygen impurities in hexagonal boron nitride (h-BN) epilayers grown on sapphire substrates. The temperature dependence of the electrical resistivity revealed the presence of a previously unnoticed impurity level of about 0.6 eV in h-BN epilayers grown at high temperatures. The results suggested that in addition to the common nitrogen vacancy (V N) shallow donors in h-BN, oxygen impurities diffused from sapphire substrates during high temperature growth also act as substitutional donors (O N). The presence of O N gives rise to an additional emission peak in the photoluminescence spectrum, corresponding to a donoracceptor pair recombination involving the O N donor and the C N (carbon occupying nitrogen site) deep level acceptor. Moreover, due to the presence of O N donors, the majority charge carrier type changed to electrons in epilayers grown at high temperatures, in contrast to typical h-BN epilayers which naturally exhibit "p-type" character. The results provided a more coherent picture for common impurities/defects in h-BN as well as a better understanding of the growth mediated impurities in h-BN epilayers, which will be helpful for finding possible ways to further improve the quality and purity of this emerging material.

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Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

Cited by 51 publications

References 37 publications

Wafer scale BN on sapphire substrates for improved graphene transport

Wafer scale BN on sapphire substrates for improved graphene transport

Chemical Vapor Deposition Growth of BN Thin Films Using B₂H₆ and NH₃

Origin and roles of oxygen impurities in hexagonal boron nitride epilayers

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Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

Cited by 51 publications

References 37 publications

Wafer scale BN on sapphire substrates for improved graphene transport

Wafer scale BN on sapphire substrates for improved graphene transport

Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3

Origin and roles of oxygen impurities in hexagonal boron nitride epilayers

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Chemical Vapor Deposition Growth of BN Thin Films Using B₂H₆ and NH₃