Growth of germanium crystal films on amorphous silicon by sputter deposition

Yu, Yang; Xu, M.; Li, Hongning; Zhou, Zhenlai; Jiang, Shiji; Wu, Xinghui; Huang, Shoujiang; Zhang, Pengxiang

doi:10.1016/s1386-9477(00)00113-2

Cited by 6 publications

(5 citation statements)

References 22 publications

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“…The transverse optical (TO) peak of the Si substrate is not observed at 520 cm −1 owing to the penetration depth of only dozens of nanometers for the Ar + laser in Raman microscopy. 28) Figure 3(a) shows Raman spectra of samples A, B, and C. A broad peak observed near 271.7 cm −1 in sample A can be assigned to the amorphous Ge-Ge (a-Ge-Ge) peak, 29) showing that it is an amorphous Ge (a-Ge) film. However, there is a sharp crystalline Ge-Ge (c-Ge-Ge) peak at around 296.9 cm −1 in sample B apart from an a-Ge-Ge peak [see Fig.…”

Section: Resultsmentioning

confidence: 99%

Investigation of the microstructure and optical properties of Ge films grown by DC magnetron sputtering and in situ annealing

Feng

Xin

et al. 2016

Jpn. J. Appl. Phys.

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We investigate the microstructure and optical properties of Ge films on Si substrates prepared at low temperature by DC magnetron sputtering and the effect of in situ annealing on them. With increasing growth temperature, Ge films undergo a transition from amorphous to microcrystalline, then to polycrystalline. After annealing, these thin films transform into polycrystalline films with the (111) preferred orientation and identical crystal sizes. The surfaces of the amorphous and microcrystalline Ge films are severely coarsened, whereas the polycrystalline Ge film still displays a smooth surface. The growth mechanisms of Ge films with different crystalline phases in the annealing process are discussed, which can explain their morphology evolutions. Additionally, their infrared absorptions are enhanced after annealing, and this is useful for fabricating high-efficiency Si-based solar cells.

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Section: Resultsmentioning

confidence: 99%

Investigation of the microstructure and optical properties of Ge films grown by DC magnetron sputtering and in situ annealing

Feng

Xin

et al. 2016

Jpn. J. Appl. Phys.

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“…The peak is slightly broader and a red shift of 1.5 cm-I is observed. The Raman spectrum at region 3 shows a very broad peak located near 275 cm-I with much lower intensity, this feature is identified from the scattering of local TO phonons of amorphous Ge [26]. In between region 1 and region 3, the typical Raman spectrum is plotted as indicated as region 2.…”

Section: Resultsmentioning

confidence: 99%

Low temperature poly-germanium growth process on insulating substrate using palladium-induced lateral crystallization

Xie

Chen

et al. 2008

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

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A thin palladium layer (--20 A) was selectively formed on top of amorphous germanium film before annealing and the effects of palladium layer on the lateral crystallization behavior of the amorphous germanium film were investigated through optical microscopeR aman spectroscopy~transmission electron microscopyẽ nergy dispersion X-ray spectroscopy and selective area electron diffraction. Lateral crystallization of Ge with high growth rate was observed after annealing at 400°C in N 2 ambient. High quality poly-crystallized Ge film was formed with little metal impurity. This lateral crystallization phenomenon might be useful for fabrication of 3D ICs as the channel materials for thin film transistors~as well as for integration of Ge photodetectors on top of Si ICs.

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“…There are other peaks in the film that might be due to defect network within the film and also Silica that was the substrate of sample deposited at 250 o C. Both the 250 o C and 450 o C samples show some crystalline evidence in the film; however due to the low intensity of these peaks these films are considered to be amorphous rather than crystalline. It has been reported that [9] there is an optimum sputtering deposition temperature for Ge films (400 o C). It has been suggested that at lower growth temperature, the slowdown of the surface migration makes the deposited atoms frozen thus preventing their crystallization.…”

Section: Figure 3 -Dark Current At Different H 2 Concentrationsmentioning

confidence: 99%

Metal-semiconductor-metal photodetector with a-Ge:H absorption layer for 1.55μm optical communication wavelength

Mirbaha

Tait

2010

SPIE Proceedings

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Metal-Semiconductor-Metal photodetectors (MSM-PDs) have been demonstrated with ease of fabrication, low capacitance, and faster responses compared to PIN photodetectors. Si and Ge are two of the CMOS compatible materials for sensing area of the photodetector. Ge, because of its higher mobility and absorption at 1.55µm wavelength is an attractive material of choice. In the outlined work, an interdigitated electrode MSM photodetector with a-Ge:H (amorphous-Ge:hydrogenated) as the sensing material has been recognized as a promising candidate for near infrared photodetection. Hydrogenating Ge generally helps improve material characteristics because it increases life time of photocarriers. Ge was sputter deposited with different H 2 concentrations of 0%, 5%, 10%, 15%, and 25% in the plasma gas. The highest hydrogen concentration showed the highest responsivity among other detectors showing that hydrogen helps to reduce the number of defects within the a-Ge film and therefore increase the life time of carriers. Results show that highest photocurrent belongs to a sample with 25% H 2 concentration in the plasma with a responsivity of 2mA/W and dark current of 11.6µA at 5v for a device area of 95×110 (µm) 2 .

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Growth of germanium crystal films on amorphous silicon by sputter deposition

Cited by 6 publications

References 22 publications

Investigation of the microstructure and optical properties of Ge films grown by DC magnetron sputtering and in situ annealing

Investigation of the microstructure and optical properties of Ge films grown by DC magnetron sputtering and in situ annealing

Low temperature poly-germanium growth process on insulating substrate using palladium-induced lateral crystallization

Metal-semiconductor-metal photodetector with a-Ge:H absorption layer for 1.55μm optical communication wavelength

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