Growth of GaNAs alloys on the N-rich side with high As content by metalorganic vapor phase epitaxy

Kimura, Akitaka; Tang, H. F.; Kuech, T. F.

doi:10.1016/j.jcrysgro.2004.01.045

Cited by 19 publications

(25 citation statements)

References 25 publications

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“…1 shows a forced quadratic fitting to the experimental gap energies on both sides with a single bowing parameter of b=16.2 eV. This bowing parameter is in agreement with the value reported in Kimura et al [11] According to this fitting curve the bandgap would rapidly close up from both sides and become negative for 0.25<x<0.9. …”

supporting

confidence: 88%

“…For both techniques, it is difficult to obtain a high concentration of As in the alloy before phase separation occurs. The highest reported As content in MOVPE grown layers is x~0.067 [10,11,12]. Even lower maximum As contents of x~0.0026 [19] and x~0.01 [20] were achieved in MBE layers grown at .750 o C and at 500 o C, respectively Recently, materials with constituents having drastically different chemical or physical properties at compositions or structures far exceeding their thermodynamic solubility and stability limits have been synthesized using extreme non-equilibrium synthesis techniques [21,22,23].…”

Section: Low Temperature Molecular Beam Epitaxial Growth Of Ga-n-asmentioning

confidence: 99%

“…It was found that GaN doped with As at low, impurity like levels shows a characteristic blue emission at room temperature. At higher As doping levels an abrupt decrease in the band gap of resulting GaN 1-x As x alloys was observed [9,10,11,12]. Fig.…”

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confidence: 91%

“…For both techniques, it is difficult to obtain a high concentration of As in the alloy before phase separation occurs. The 6 highest reported As content in MOVPE grown layers is x~0.067 [10,11,12] [21,22,23]. The atomic diffusion length in these non-equilibrium processes is long enough to form crystalline lattices with uniform compositions, but short enough to avoid equilibrium phase segregation.…”

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Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range

Новиков

Broesler

et al. 2009

Journal of Applied Physics

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Alloying is a commonly accepted method to tailor properties of semiconductor materials for specific applications. Only a limited number of semiconductor alloys can be easily synthesized in the full composition range. Such alloys are, in general formed of component elements that are well matched in terms of ionicity, atom size and electronegativity. In contrast there is a broad class of potential semiconductor alloys formed of component materials with distinctly different properties. In most instances these mismatched alloys are immiscible under standard growth conditions. Here we report on the properties of GaN 1-x As x a highly mismatched, immiscible alloy system that was successfuly synthesized in the whole composition range using a non-equilibrium low temperature molecular beam epitaxy technique. The alloys are amorphous in the composition range of 0.170.2, and to the upward movement of the valence band for alloys with x<0.2. The unique features of the band structure offers an opportunity of using GaN 1-x As x alloys for various types of solar power conversion devices. 3 1. The Ga-N-As Alloy system Dilute alloysSemiconductor alloys formed through substitution of atoms with very different electronegativity and/or size have been known as highly mismatched alloys (HMAs).Because of large miscibility gaps, typically HMAs consist of a semiconductor matrix (elemental or compound) with the substitution of a small amount (up to several percents) of distinctly different isovalent atoms. The HMAs show large band gap reduction and their electronic structure is drastically different from their host materials. This is in contrast to conventional semiconductor alloys such as AlGaAs and GaAsP whose physical, electronic and optical properties can be deduced from a linear interpolation between their corresponding end point compounds with only a slight deviation, as predicted by the virtual crystal approximation (VCA). A most notable example of HMAs is the As-rich GaN x As 1-x in which strong band gap reduction by as much as 180 meV per mole percent of N has been observed [1,2,3,4]. The strong dependence of the band gap on the N content has made these diluted III-V nitrides important materials for a variety of applications, including long wavelength optoelectronic devices [5,6] and high efficiency hybrid solar cells [7,8].In contrast to the very extensively studied As-rich GaNAs alloys much less work has been devoted to HMAs on the N-rich side of this alloy system. It was found that GaN doped with As at low, impurity like levels shows a characteristic blue emission at room temperature. At higher As doping levels an abrupt decrease in the band gap of...

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supporting

confidence: 88%

Section: Low Temperature Molecular Beam Epitaxial Growth Of Ga-n-asmentioning

confidence: 99%

mentioning

confidence: 91%

mentioning

confidence: 99%

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Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range

Новиков

Broesler

et al. 2009

Journal of Applied Physics

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“…Gallium, arsenide, and nitrogen precursors used for the growths were Trimethylgallium (TMGa), tertiarybutylarsine (TBAs), and dimethylhydrazine (DMHy), respectively. To improve the nitrogen incorporation efficiency in GaAsN epilayers [2], purified nitrogen gas was used instead of the commonly used hydrogen carrier gas [3,4] in the MOCVD growths. Before growing the GaAsN epilayer, a 100 nm GaAs buffer layer was grown on GaAs (100) substrate at 650 o C. Then, the substrate temperature was reduced to 550 o C to grow the The existence of energy level inside the band gap energy of GaAsN was discussed in this paper.…”

Section: Methodsmentioning

confidence: 99%

Below bandgap emission with intensity higher than band‐to‐band transition in GaAsN

Sentosa

Tang

Chua

et al. 2008

Phys. Status Solidi (c)

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The existence of energy level inside the band gap energy of GaAsN was discussed in this paper. The photoluminescence (PL) spectrum of the GaAsN epilayers grown by metal‐organic chemical vapor deposition (MOCVD) consists of two distinguished peaks separated by 0.2 eV energy difference. First peak belongs to the energy band gap transition emission, while the second peak resides at longer wavelength with intensity more than ten times stronger than that of the band‐to‐band emission. The activation energy of this second emission peak is found to be 113 meV. The peak shows a characterization of a defect in the epilayer where its PL intensity decreases when the GaAsN epilayer was exposed to rapid thermal annealing (RTA). This type of defect related emission is the first reported in as‐grown GaAsN epilayer. This defect emission peak can be overcome with optimization of V/III ratio during the MOCVD growth combined with post‐growth RTA annealing. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Bandgap evolution of GaN1−x As x in the whole composition range

Zhao

Wei

et al. 2013

Appl. Phys. A

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Growth of GaNAs alloys on the N-rich side with high As content by metalorganic vapor phase epitaxy

Cited by 19 publications

References 25 publications

Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range

Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range

Below bandgap emission with intensity higher than band‐to‐band transition in GaAsN

Bandgap evolution of GaN1−x As x in the whole composition range

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