Growth of GaN Thin Films on Sapphire Substrate by Low Pressure MOCVD

Ishida, M.; Hashimoto, Tadao; Takayama, Toru; Imafuji, Osamu; Yuri, Masaaki; Yoshikawa, A.; Itoh, Kunio; Terakoshi, Yoshitami; Sugino, Takashi; Shirafuji, Junji

doi:10.1557/proc-468-69

Cited by 12 publications

(5 citation statements)

References 8 publications

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“…The AlO x N y layer, formed using our nitridation process, may serve as a buffer to reduce the lattice mismatch between film and substrate, or to modify the surface energy of the substrate. Similar nitridation layers produced prior to epitaxial growth of GaN have resulted in increased nucleation density [26,27]. Compared to a clean sapphire surface, AlO x N y has a higher surface energy [28], which reduces the energy barrier thereby improving nucleation and substrate coverage and promoting self-terminating growth.…”

Section: Discussionmentioning

confidence: 99%

Effect of surface nitridation on the epitaxial growth of few-layer sp2 BN

Snure

Paduano

Kiefer

2016

Journal of Crystal Growth

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Boron Nitride is a promising 2D dielectric material for use in numerous electronic applications. In order to realize this potential, a process for producing atomically thin layers on microelectronics-compatible substrates is desirable. In this paper we describe an approach to epitaxially grow few-layer sp 2 BN directly on an insulating substrate, using metal-organic chemical vapor deposition (MOCVD). We also elucidate the effect of sapphire surface nitridation on the growth characteristics. We compare the effect of nitridation on the growth rate, surface morphology and structure across a wide range of V/III ratios. Depending on the V/III ratio, two different growth modes were identified: at low V/III 3D island growth is dominant and at high V/III the growth transitions to a self-terminating mode. Under self-terminating growth a film thickness of 1.5 nm is typically achieved. Surface nitridation was found to improve nucleation, promoting self-terminating growth, and resulting in atomically smooth films. Reflection high energy electron diffraction (RHEED) patterns reveal the epitaxial relationship between BN and sapphire to be [1-100]‖[11-20] and [0001]‖[0001]. Growth at low V/III ratios without surface nitridation produced films with large hexagonal holes, which could not be completely filled by extending the growth time. Through surface nitridation, these holes were eliminated, producing continuous smooth films.

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Section: Discussionmentioning

confidence: 99%

Effect of surface nitridation on the epitaxial growth of few-layer sp2 BN

Snure

Paduano

Kiefer

2016

Journal of Crystal Growth

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“…It is worth pointing out that there is an ambiguity in the determination of the optimal growth conditions which is caused by the trade-off between dislocation density and surface morphology. 27)…”

Section: Optimization Of Ammonia Mbe Growth Of Aln Layersmentioning

confidence: 99%

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

Alyamani

Луценко²,

Rzheutski³

et al. 2019

Jpn. J. Appl. Phys.

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The structural properties and surface morphology of AlN epitaxial layers grown by ammonia (NH3) and plasma-assisted (PA) molecular beam epitaxy (MBE) at different growth conditions on (0001) sapphire were investigated. The lowest RMS roughness of ∼0.7 nm was achieved for the sample grown by NH3 MBE at a substrate temperature of 1085 °C and NH3 flow of 100 standard cm3 min−1. Atomic force microscopy measurements demonstrated a terrace-monolayer step-like surface morphology. Furthermore, the optimal substrate temperature for growth of GaN and AlGaN layers was determined from analysis of the GaN thermal decomposition rate. Using the optimized growth conditions, high electron mobility transistor heterostructures were grown by NH3 MBE on different types of AlN nucleation layer deposited by NH3 MBE or PA MBE. The grown heterostructures demonstrated comparable two-dimensional electron gas (2DEG) properties. The maximum 2DEG mobility of ∼2000 cm2 V–1 s–1) at a 2DEG density of ∼1.17 × 1013 cm−2 was achieved for the heterostructure with a PA MBE-grown AlN nucleation layer. The obtained results demonstrate the possibility of successful combination of different epitaxial approaches within a single growth process, which will contribute to the development of a new type of hybrid epitaxy that exploits the advantages of several technologies.

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“…Matsushita Electronics Laboratory group, jointly with the Osaka University group, reported on a detailed study of the growth of GaN thin films on sapphire substrate by MOCVD (Ishida, et al 1997). They studied the effects of nitridation and buffer layer thickness on the quality of the overgrown GaN films (see Fig.…”

Section: Gan Electronic Device Research In Japanmentioning

confidence: 99%

“…The Matsushita/Osaka University group also reported on the growth of wurtzite and cubic GaN layers on the 3C-SiC/Si (001) substrates (Hashimoto, et al 1996) and on the growth of InGaN films on GaN (0001)/Al 2 O, (0001) substrates (Ishida, et al 1997b). The InGaN films were grown at lower temperatures (~ 700 -750 °C).…”

Section: Gan Electronic Device Research In Japanmentioning

confidence: 99%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

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Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

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Growth of GaN Thin Films on Sapphire Substrate by Low Pressure MOCVD

Cited by 12 publications

References 8 publications

Effect of surface nitridation on the epitaxial growth of few-layer sp2 BN

Effect of surface nitridation on the epitaxial growth of few-layer sp2 BN

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

High-Temperature Electronics in Europe

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