Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy

We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB 2 (0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH 3 molecules with the silicene-terminated ZrB 2 surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH 3 at 400• C leads to surface nitridation, and subsequent annealing up to 830• C results in a solid phase reaction with the ZrB 2 subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation. C 2016 AIP Publishing LLC. [http://dx

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“…• C has been reported by Tomida et al 18 Formation of a cubic phase Zr x B y N z alloy at temperatures as low as 385…”

Section: Resultsmentioning

confidence: 81%

A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

Wiggers

Bui

Friedlein

et al. 2016

The Journal of Chemical Physics

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“…During the first $150 s of the experiment the spacing and uniformity of the RHEED streaks remain constant, but the intensity decreases somewhat. Work by other groups [16,17] has shown that a disordered interfacial layer up to several nanometers thickness can be formed during growth of III-N films on ZrB 2 substrates. We believe that the initial evolution of the RHEED pattern is related to formation of such an interfacial layer rather than actual growth of crystalline GaN.…”

Section: Methodsmentioning

confidence: 99%

Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2 (0 0 0 1)

Armitage

Nishizono

Suda

et al. 2005

Journal of Crystal Growth

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“…It has been used as a thin film resistor, a diffusion barrier layer in micro devices, hard coating, and so on. It is also expected to be used for a cold electron emitter, a catalyst, or a substrate for growth of epitaxial GaN films [1,2]. The materials of MB 2 compose an AlB 2 -type crystal structure as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Electronic States of NbB2(0001), TaB2(0001) and ZrB2(0001) Surfaces Studied by Angle-resolved Ultraviolet Photoelectron Spectroscopy

Kumashiro

Tanaka

Kawamata

et al. 2006

e-J. Surf. Sci. Nanotechnol.

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We have investigated the surface electronic structures of transition-metal diboride (0001) surfaces by angleresolved ultraviolet photoelectron spectroscopy (ARUPS) and ab-initio calculations based on the slab model with 13 layers. In the spectra of NbB2 and TaB2, the peaks near −1 eV blow EF are derived from the π band of their surface graphitic boron layer. As compared with graphene, the dispersion curves of the π bonds are greatly modulated by the hybridization of B-π orbits with the metal d orbits. On the other hand, the similar peaks were not observed in spectra of ZrB2, of which the surface is terminated with Zr atoms.

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Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy

Cited by 37 publications

References 8 publications

A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2 (0 0 0 1)

Electronic States of NbB2(0001), TaB2(0001) and ZrB2(0001) Surfaces Studied by Angle-resolved Ultraviolet Photoelectron Spectroscopy

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