A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

Wiggers, F. B.; Bui, Hao Van; Friedlein, Rainer; Yamada‐Takamura, Yukiko; Schmitz, Jurriaan; Kovalgin, Alexeij Y.; Jong, M. P. de

doi:10.1063/1.4944579

Cited by 5 publications

(2 citation statements)

References 18 publications

(24 reference statements)

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“…In addition, due to its gaseous nature, the diffusion barrier is anticipated to be small. NH 3 reacts with silicene only at elevated temperatures, in contrast to NO 2 and CO 2 , for example. We first study different absorption sites for an NH 3 molecule on monolayer PtSe 2 : on top of the Pt atom, on top of the upper Se atom, on top of the lower Se atom, and on top of the Pt–Se bond.…”

Section: Resultsmentioning

confidence: 99%

Silicene on Monolayer PtSe₂: From Strong to Weak Binding via NH₃ Intercalation

Sattar

Singh

Schwingenschlögl

2018

ACS Appl. Mater. Interfaces

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We study the properties of silicene on monolayer PtSe by first-principles calculations and demonstrate a much stronger interlayer interaction than previously reported for silicene on other semiconducting substrates. This fact opens the possibility of a direct growth. A band gap of 165 meV results from inversion symmetry breaking and large spin-splittings in the valence and conduction bands from proximity to monolayer PtSe and its strong spin-orbit coupling. It is also shown that the interlayer interaction can be effectively reduced by intercalating NH molecules between silicene and monolayer PtSe without inducing charge transfer or defect states near the Fermi energy. A small NH diffusion barrier makes intercalation a viable experimental approach to control the interlayer interaction.

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Section: Resultsmentioning

confidence: 99%

Silicene on Monolayer PtSe₂: From Strong to Weak Binding via NH₃ Intercalation

Sattar

Singh

Schwingenschlögl

2018

ACS Appl. Mater. Interfaces

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“…Only the carbon-related 2D materials are synthesized by the various growth methods, while the others are produced under the molecular beam epitaxial growth and the mechanical method. By using STM [or combination with LEED/RHEED], the graphene-like honeycomb lattices are clearly revealed in group-IV 2D systems, such as, 2D C-, Si-Ge-, Sn-, and Pb-adlayer, with the hexagonal symmetries, respectively, on SiO 2 /Cu/Bi 2 Se 3 [45,46,47],Ag (111), Ir (111) and ZrB 2 (0001) [48,49,50,51,52,53],…”

Section: Introductionmentioning

confidence: 99%

Stacking-configuration-enriched essential properties in bilayer silicenes

Liu,

Lin,

2019

Preprint

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The geometric, electronic and magnetic properties of silicene-related systems present the diversified phenomena through the first-principles calculations. The critical factors, the group-IV monoelements, buckled/planar structures, stacking configurations, layer numbers, and van der Waals interactions of bilayer composites are taken into account simultaneously. The developed theoretical framework is responsible for the concise physical and chemical pictures. The delicate evaluations and analyses are conducted on the optimal lattices, the atom-& spin-dominated energy bands, the atom-, orbital-& spin-projected vanHove singularities, and the magnetic moments. Most importantly, they achieve the decisive mechanisms, the buckled/planar honeycomb lattices, the multi-/single-orbital hybridizations, and the significant/negligible spin-orbital couplings. Furthermore, we investigate the stackingconfiguration-induced dramatic transformations of the essential properties by the relative shift in bilayer graphene and silicene. The lattice constant, interlayer distance, the buckle height, and the total energy essentially depend on the magnitude 1 and direction of the relative shift: AA → AB → AA ′ → AA. Apparently, sliding bilayer systems are quite different between silicene and graphene in terms of electronic properties, strongly depending on the buckled/planar honeycomb lattices, the multi-/single-orbital hybridizations, the dominant/observable interlayer hopping integrals, and the significant/negligible spin interactions. The predicted results can account for the up-to-date experimental measurements.

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Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition

Cheng

Wang

Chang

et al. 2017

Sci Rep

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Metallic channel transistors have been proposed as the candidate for sub-10 nm technology node. However, the conductivity modulation in metallic channels can only be observed at low temperatures usually below 100 K. In this study, room-temperature field effect and modulation of the channel resistance was achieved in the metallic channel transistors, in which the oxygen-doped TiN ultrathinbody channels were prepared by the atomic layer delta doping and deposition (AL3D) with precise control of the channel thickness and electron concentration. The decrease of channel thickness leads to the reduction in electron concentration and the blue shift of absorption spectrum, which can be explained by the onset of quantum confinement effect. The increase of oxygen incorporation results in the increase of interband gap energy, also giving rise to the decrease in electron concentration and the blue shift of absorption spectrum. Because of the significant decrease in electron concentration, the screening effect was greatly suppressed in the metallic channel. Therefore, the channel modulation by the gate electric field was achieved at room temperature due to the quantum confinement and suppressed screening effect with the thickness down to 4.8 nm and the oxygen content up to 35% in the oxygen-doped TiN ultrathin-body channel.With the rapid evolution of semiconductor technology down to the sub-10 nm technology node, nanoscale transistors based on new structures and materials have been explored [1][2][3][4][5][6][7][8][9][10][11] . One of the possible candidates for sub-10 nm devices is the junctionless transistors (JLTs), in which an ultrathin semiconductor body with a single doping type in the source, channel, and drain has been proposed 2, 12-15 . A JLT can be regarded as a "gated-resistor" with the absence of PN junctions in the source and drain regions. A gate voltage is applied to control the current by the formation of a depletion region in channel. Because of the absence of PN junctions in JLTs, the ultrafast thermal annealing for the dopant activation in source and drain is not needed, which allows one to fabricate the transistors with smaller channel lengths. Moreover, the presence of PN junctions in metal-oxide-semiconductor field effect transistors (MOSFETs) causes the extension of source/drain depletion charges into the channel, giving rise to severe short-channel effects including the drain-induced barrier lowering and degraded subthreshold slope 2 . Hence the severe short-channel effects can be alleviated in JLTs [15][16][17] . In addition, in the OFF state of JLTs, the effective distance between source and drain is longer than the physical gate length due to the extension of the channel depletion into source and drain, which suppresses the short channel effects in JLTs 17,18 . Accordingly, the junctionless structure provides the solution to overcome the difficulties related to aggressive scaling of MOSFETs. Actually, the JLT with a channel length down to 3 nm has been demonstrated 19 . In order to achieve a high ...

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A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

Cited by 5 publications

References 18 publications

Silicene on Monolayer PtSe₂: From Strong to Weak Binding via NH₃ Intercalation

Silicene on Monolayer PtSe₂: From Strong to Weak Binding via NH₃ Intercalation

Stacking-configuration-enriched essential properties in bilayer silicenes

Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition

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A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB2

Cited by 5 publications

References 18 publications

Silicene on Monolayer PtSe2: From Strong to Weak Binding via NH3 Intercalation

Silicene on Monolayer PtSe2: From Strong to Weak Binding via NH3 Intercalation

Stacking-configuration-enriched essential properties in bilayer silicenes

Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition

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Product

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Silicene on Monolayer PtSe₂: From Strong to Weak Binding via NH₃ Intercalation

Silicene on Monolayer PtSe₂: From Strong to Weak Binding via NH₃ Intercalation