Growth of GaN and AlGaN for UV/blue p-n junction diodes

Akasaki, Isamu; Amano, Hiroshi; Murakami, Hideki; Sassa, M.; Kato, H.; Manabe, K.

doi:10.1016/0022-0248(93)90352-w

Cited by 91 publications

(39 citation statements)

References 12 publications

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“…Because of their wide direct bandgap, GaN and related III-V nitrides are very interesting materials for the fabrication of optoelectronic devices with blue-violet light emission [1][2][3]. GaN films have been prepared by metalorganic vapor phase epitaxy (MOVPE) or molecular beam epitaxy (MBE).…”

Section: Introductionmentioning

confidence: 99%

Annealing Effect on GaN Buffer Layer Surface

Halidou¹,

Boufaden²,

Touhami³

et al. 2001

phys. stat. sol. (a)

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We investigate the effect of annealing parameters (carrier gas, duration) on GaN buffer layers grown by metalorganic vapor phase epitaxy. The samples were characterized in situ by a laser reflectometry (LR) set-up with a He-Ne laser beam and ex situ by atomic force microscopy (AFM). The reflectivity decreases when the temperature is about 1050 C. This fact depends on the hydrogen flow rate in the H 2 þ N 2 gas mixture and the thickness of the buffer layers. The correlation between this observation and the AFM images indicates that H 2 generates a mass transport on the substrate surface and a three-dimensional (3D) mode surface morphology for thick buffer layers. For thin buffer layers this phenomenon is limited and the sample surfaces have a two-dimensional aspect (2D) similar to that obtained under N 2 rich annealing ambient. Under this ambient, no surface transformation is observed for longer annealing duration, which means that all the surface transformations occur during the temperature ramp between 600 and 1050 C.

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Section: Introductionmentioning

confidence: 99%

Annealing Effect on GaN Buffer Layer Surface

Halidou¹,

Boufaden²,

Touhami³

et al. 2001

phys. stat. sol. (a)

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“…The TMGa flux is 0.5 sccm and N 2 flux is 80 sccm. This low temperature buffer layer was expected to alleviate the lattice and thermal mismatches between Ti coated glass substrates and GaN films, and also used to supply nucleation centers to promote the crystalline quality of GaN films [9][10][11]. Additionally, N 2 flux was increased to 100 sccm by mass flow controller.…”

Section: The Growth Methods Of Gan Thin Filmsmentioning

confidence: 99%

Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature

et al. 2013

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Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) with trimethyl gallium (TMGa) as gallium source. The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), atomic force microscopy (AFM) and Raman scattering. The GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm. The ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage (I-V) curve. The GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes. GaN, low-temperature deposited, glass substrates, Ti film, ECR-PEMOCVD Citation:Wang E P, Bian J M, Qin F W, et al. Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature.

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“…The Ga 1−x Mn x N based DMS has attracted great interest and is extensively studied, due to its close relationship to blue LED [28][29][30] technology whose host compound is GaN.…”

Section: Introductionmentioning

confidence: 99%

Generalized multiband typical medium dynamical cluster approximation: Application to (Ga,Mn)N

et al. 2016

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We generalize the multiband typical medium dynamical cluster approximation and the formalism introduced by Blackman, Esterling and Berk so that it can deal with localization in multiband disordered systems with both diagonal and off-diagonal disorder with complicated potentials. We also introduce a new ansatz for the momentum resolved typical density of states that greatly improves the numerical stability of the method, while preserving the independence of scattering events at different frequencies. Starting from the first-principles effective Hamiltonian, we apply this method to the diluted magnetic semiconductor Ga1−xMnxN, and find the impurity band is completely localized for Mn concentrations x < 0.03, while for 0.03 < x < 0.10 the impurity band has delocalized states but the chemical potential resides at or above the mobility edge. So, the system is always insulating within the experimental compositional limit (x ≈ 0.10) due to Anderson localization. However, for 0.03 < x < 0.10 hole doping could make the system metallic allowing double exchange mediated, or enhanced, ferromagnetism. The developed method is expected to have a large impact on first-principles studies of Anderson localization.

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Growth of GaN and AlGaN for UV/blue p-n junction diodes

Cited by 91 publications

References 12 publications

Annealing Effect on GaN Buffer Layer Surface

Annealing Effect on GaN Buffer Layer Surface

Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature

Generalized multiband typical medium dynamical cluster approximation: Application to (Ga,Mn)N

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