Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature

Abstract

Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) with trimethyl gallium (TMGa) as gallium source. The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), atomic force microscopy (AFM) and Raman scattering. The GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm. The ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage (I-V) curve. The GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes. GaN, low-temperature deposited, glass substrates, Ti film, ECR-PEMOCVD Citation:Wang E P, Bian J M, Qin F W, et al. Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature.