Growth of GaN/AlGaN HFETs on SiC Substrates with Optimized Electrical Characteristics Using the Ammonia-MBE Technique

Webb, J. B.; Tang, H.; Bardwell, J. A.; Liu, Y.; Lapointe, J.; MacElwee, T.W.

doi:10.1002/1521-396x(200212)194:2<439::aid-pssa439>3.0.co;2-3

Cited by 11 publications

(4 citation statements)

References 7 publications

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“…All these results confirm that it is difficult to grow high quality AlN films by low temperature PVD on silicon. This differs noticeably from reports on the growth at high temperature on substrates like silicon carbide [3,4] and sapphire [5]. In our opinion, this is mainly due to the growth conditions far from thermodynamic equilibrium and to the high reactivity of silicon that both lead to in-plane misoriented AlN nuclei at the early stages of the growth.…”

contrasting

confidence: 97%

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Cordier

Frayssinet

Chmielowska

et al. 2014

Phys. Status Solidi C

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In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based structures on silicon can then be regrown with device quality active layers, as attested by the realization of high electron mobility transistors. Furthermore, the low substrate bowing achieved with these structures is of high interest for the fabrication of large GaN-on-silicon wafers

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contrasting

confidence: 97%

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Cordier

Frayssinet

Chmielowska

et al. 2014

Phys. Status Solidi C

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“…The fabrication procedures for the devices measured here are detailed elsewhere [15], and as are details of the growth of the AlGaN/GaN [16]. The devices were mounted in a small chamber, and characterized with an HP/Agilent 4155.…”

Section: Methodsmentioning

confidence: 99%

Monitoring the self-heating in a high frequency GaN HFET

McAlister

Bardwell

Haffouz

et al. 2006

Solid-State Electronics

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“…Therefore, the optimum GaN growth temperature can be determined as a threshold value corresponding to a temperature approaching the GaN thermal decomposition temperature. [33][34][35] In our experiment, for an NH 3 flow of 100 cm 3 min −1 , this temperature was determined to be T g = 945 °C, and these conditions were used for the growth of the AlGaN buffer as well as the barrier layers.…”

Section: Growth Of Hemt Heterostructures and Their 2deg Propertiesmentioning

confidence: 99%

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

Alyamani

Луценко²,

Rzheutski³

et al. 2019

Jpn. J. Appl. Phys.

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The structural properties and surface morphology of AlN epitaxial layers grown by ammonia (NH3) and plasma-assisted (PA) molecular beam epitaxy (MBE) at different growth conditions on (0001) sapphire were investigated. The lowest RMS roughness of ∼0.7 nm was achieved for the sample grown by NH3 MBE at a substrate temperature of 1085 °C and NH3 flow of 100 standard cm3 min−1. Atomic force microscopy measurements demonstrated a terrace-monolayer step-like surface morphology. Furthermore, the optimal substrate temperature for growth of GaN and AlGaN layers was determined from analysis of the GaN thermal decomposition rate. Using the optimized growth conditions, high electron mobility transistor heterostructures were grown by NH3 MBE on different types of AlN nucleation layer deposited by NH3 MBE or PA MBE. The grown heterostructures demonstrated comparable two-dimensional electron gas (2DEG) properties. The maximum 2DEG mobility of ∼2000 cm2 V–1 s–1) at a 2DEG density of ∼1.17 × 1013 cm−2 was achieved for the heterostructure with a PA MBE-grown AlN nucleation layer. The obtained results demonstrate the possibility of successful combination of different epitaxial approaches within a single growth process, which will contribute to the development of a new type of hybrid epitaxy that exploits the advantages of several technologies.

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Growth of GaN/AlGaN HFETs on SiC Substrates with Optimized Electrical Characteristics Using the Ammonia-MBE Technique

Cited by 11 publications

References 7 publications

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Monitoring the self-heating in a high frequency GaN HFET

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

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