Growth of Ga-doped ZnO by MOVPE using diisopropylzinc and tertiary butanol

Nishimoto, Norihiro; Yamamae, Takahiro; Kaku, Takashi; Matsuo, Yuki; Senthilkumar, K.; Senthilkumar, O.; Okamoto, Jun; Yamada, Yasuji; Kubo, Shugo; Fujita, Yasuhisa

doi:10.1016/j.jcrysgro.2008.07.005

Cited by 18 publications

(6 citation statements)

References 17 publications

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“…As a result of these properties, ZnO thin films have been extensively researched for application in optical and electronic devices such as light emitting diodes (LEDs) and transparent conductive oxides (TCOs) [1,2]. In addition, ZnO nanoparticles have been investigated for medical applications [3].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of ZnO-MgO Mixed Thin Films Grown by Metal-Organic Decomposition

Nishimoto

Yoshino

Fujihara

et al. 2015

e-J. Surf. Sci. Nanotech.

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The influence of ZnO-MgO mixed metal-organic decomposition (MOD) coating materials have been investigated based on crystal growth and film properties of ZnO-MgO mixed thin films. These mixed thin films were grown on quartz substrates by dip coating and then sintered at 550• C. The film properties were evaluated using an atomic force microscope and a UV-VIS-NIR spectrophotometer, and by performing X-ray diffraction measurements. The growth mechanism is changed by MgO in ZnO-MgO mixed MOD coating materials. Mg segregated to the surface side in the ZnO-MgO mixed thin film, and some of the segregated Mg formed ZnMgO. In addition, the grain size of ZnO-MgO mixed thin films increased with an increase in the amount of MgO additive. Therefore, it can be concluded that grain boundary segregation of Mg enhances crystal growth. This enhancement of crystal growth by the intentional addition of an impurity can be applied to improving the characteristics of other semiconductor materials.

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Section: Introductionmentioning

confidence: 99%

Evaluation of ZnO-MgO Mixed Thin Films Grown by Metal-Organic Decomposition

Nishimoto

Yoshino

Fujihara

et al. 2015

e-J. Surf. Sci. Nanotech.

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“…In contrast, FTO has a relatively high resistivity, around 10 −3 Ω cm, when compared with ITO. New materials and structures with a barrier layer on a TCO layer have been researched to overcome the problems regarding lack of resources and TCO properties 4–6. An effective technique for improving thermal stability is covering the TCO layer by a metal oxide layer.…”

Section: Introductionmentioning

confidence: 99%

Effect of temperature on the electrical properties of ITO in a TiO₂/ITO film

Nishimoto¹,

Yamada²,

Ohnishi³

et al. 2013

Physica Status Solidi (a)

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Thermal stabilities of indium tin oxide (ITO) substrates and TiO 2 /ITO structures were evaluated in relation to their electrical properties. The ITO substrates and TiO 2 /ITO structures were annealed at 350, 400, and 500 8C. The ITO substrate with large grain size showed higher thermal stability than that with small grain size. The thermal stability of TiO 2 / ITO structure improved with increasing TiO 2 thickness, and a decrease in electron concentration was observed in resistance-increased samples. These changes were attributed to variations in grain-boundary potential caused by oxygen adsorption. It may be concluded that variation of the grain-boundary potential by thermal annealing has a dominant influence on resistance. Therefore, optimization of the grain size is important to improve the thermal stability of ITO. This mechanism and procedure can be applied to improve the characteristics of other TCO materials.

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“…However, due to its mass production potential and increased demands on cost effectiveness, interest in APCVD of ZnO TCO has re-emerged [11]. For use as TCO, excellent resistivities were demonstrated of 3.6 × 10 −4 Ω cm [14], at carrier concentrations of 7 × 10 20 cm −3 , approaching carrier concentrations obtained at LPCVD (>10 21 cm −3 ) [15]. These results demonstrate that APCVD of ZnO can meet the electrical requirements needed in various applications.…”

Section: Introductionmentioning

confidence: 99%

APCVD of ZnO:Al, insight and control by modeling

Deelen¹,

Illiberi²,

Kniknie³

et al. 2013

Surface and Coatings Technology

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Atmospheric pressure chemical vapor deposition (APCVD) of ZnO from diethyl zinc (DEZn) and t-butanol was performed using an industrial reactor design. Deposition profiles were recorded to gain insight in the position dependent variations in layer thickness in such a reactor. We observed that for a deposition temperature below 400°C most of the deposition took place close to the exit of the gasses, while for increasing temperatures the deposition shifts towards the gas inlet. This trend can be explained by the reaction mechanism through an intermediate alkoxide species from DEZn and t-butanol, which in turn leads to ZnO deposition through a surface reaction. The deposition profile is dependent on the local alkoxide concentration. With increasing temperature, the formation rate increases. This translates in an earlier formation, i.e. in a shift upstream towards gas inlet because this alkoxide formation takes place during the transport through the reactor. Chemical vapor deposition (CVD) is a highly complex system with many interacting physical and chemical processes. Modeling was used to gain insight on the local variations of the concentration of reactive species inside a reactor and was shown to predict the deposition profiles. Moreover, the impact of changes in reactor design on the deposition is discussed.

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Growth of Ga-doped ZnO by MOVPE using diisopropylzinc and tertiary butanol

Cited by 18 publications

References 17 publications

Evaluation of ZnO-MgO Mixed Thin Films Grown by Metal-Organic Decomposition

Evaluation of ZnO-MgO Mixed Thin Films Grown by Metal-Organic Decomposition

Effect of temperature on the electrical properties of ITO in a TiO₂/ITO film

APCVD of ZnO:Al, insight and control by modeling

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Growth of Ga-doped ZnO by MOVPE using diisopropylzinc and tertiary butanol

Cited by 18 publications

References 17 publications

Evaluation of ZnO-MgO Mixed Thin Films Grown by Metal-Organic Decomposition

Evaluation of ZnO-MgO Mixed Thin Films Grown by Metal-Organic Decomposition

Effect of temperature on the electrical properties of ITO in a TiO2/ITO film

APCVD of ZnO:Al, insight and control by modeling

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Product

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Effect of temperature on the electrical properties of ITO in a TiO₂/ITO film