Growth of Fe on Si (100) at room temperature and formation of iron silicide

Rührnschopf, K.; Borgmann, D.; Wedler, G.

doi:10.1016/0040-6090(95)08248-4

Cited by 60 publications

(37 citation statements)

References 25 publications

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“…This behaviour is attributed to the formation of an FeSi 2 species that is also described in the literature for higher temperatures. 5,7,15,16 Additionally, a strong diffusion of Si from the bulk to the surface occurs in this high-temperature region, as can be deduced from the increase of the Si signal. In a second experiment the behaviour of thin Ir layers deposited on Si(100)-(2 ð 1) was examined.…”

Section: Resultsmentioning

confidence: 94%

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Electron spectroscopic studies of iron and iridium silicides

Probst

Denecke

Whelan

et al. 2002

Surface & Interface Analysis

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The formation of iron and iridium silicides was studied by means of highly resolved photoelectron spectroscopy of core and valence levels as well as by means of low-energy electron diffraction (LEED). The experiments were carried out at BESSY II in Berlin using synchrotron radiation for the photoemission studies. After evaporation of seven monolayers of Fe on Si(111) at room temperature and annealing to 410 K for 420 s, an ordering of the surface structure and the formation of an (1×1) LEED pattern is observed. Upon further heating to 500 K a strong change in both UPS and XPS spectra occurs. This behaviour is attributed to the formation of FeSi x (1 ≤ x ≤ 2). After annealing of a thin Ir layer on Si(100) to 1130 K, a p(2 × 2) LEED pattern with respect to the silicon substrate is observed, which indicates the formation of a well-ordered surface compound. Comparison with the literature shows that the formation of an IrSi species is well known, but only an amorphous and a polycrystalline modification have been described upto now.

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Section: Resultsmentioning

confidence: 94%

“…In our group, the layer-by-layer growth of iron films was described on Si(100) 7 and the formation and oxidation 8,9 of polycrystalline FeSi 2 were studied by means of electron spectroscopy. Iron silicide films were also produced by adsorption and dissociation of Fe(CO) 5 on Si(111).…”

Section: Introductionmentioning

confidence: 99%

Electron spectroscopic studies of iron and iridium silicides

Probst

Denecke

Whelan

et al. 2002

Surface & Interface Analysis

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“…In contrast to the thick oxide, iron catalyst deposited on hydrogen terminated silicon begins to reduce to metallic iron when the catalyst by the time it is annealed to 550 o C. This is seen in figure 2b by the decrease in Fe 2p intensity at 710. [34] The peak at 729 eV is due to a plasmon loss, seen in Figure 2c, and has been observed in electron energy loss spectroscopy [35] as well as XPS [12,34] investigations of Fe/Si multilayers. Further, the intensity of the shoulder on the Si 2p peak increases and the SiO 2 has desorbed entirely as evidenced by the loss of the ∼103.3 eV feature in the Si 2p spectrum.…”

Section: Resultsmentioning

confidence: 99%

Critical Oxide Thickness for Efficient Single‐Walled Carbon Nanotube Growth on Silicon Using Thin SiO₂ Diffusion Barriers

Simmons

Nichols

Marcus

et al. 2006

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The ability to integrate carbon nanotubes, especially single-walled carbon nanotubes, seamlessly onto silicon would expand the range of applications considerably. Though direct integration using chemical vapor deposition is the simplest method, the growth of single-walled carbon nanotubes on bare silicon and on ultra-thin oxides is greatly inhibited due to the formation of a non-catalytic silicide. Using x-ray photoelectron spectroscopy, we show that silicide formation occurs on ultra-thin oxides due to thermally activated metal diffusion through the oxide. Silicides affect the growth of single-walled nanotubes more than multi-walled nanotubes due to the increased kinetics at the higher single-walled nanotube growth temperature. We demonstrate that nickel and iron catalysts, when deposited on clean silicon or ultra-thin silicon dioxide layers, begin to form silicides at relatively low temperatures, and that by 900 o C, all of the catalyst has been incorporated into the silicide, rendering it inactive for subsequent single-walled nanotube growth.We further show that a 4 nm silicon dioxide layer is the minimum diffusion barrier thickness which allows for efficient single-walled nanotube growth.

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“…Alvarez et al [16] found that above the coverage of 5 ML the reaction slows down and metallic Fe grows with some Si atoms still dissolved in the Fe matrix. Ruehrnschopf et al [12] could not detect any interdiffusion, whereas Kläsges et al [13] estimated the interface silicide thickness to be around $2 nm and found it to be ferromagnetic.…”

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Initial stages of growth of iron on silicon for spin injection through Schottky barrier

Dash

Carstanjen

2011

Physica Status Solidi (b)

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The characterization of ferromagnet‐semiconductor interfaces with monolayer (ML) depth resolution is an important issue in the development of spin injection devices. In this article, highly resolved depth distributions of Fe have been measured during the initial stages of growth of Fe on Si (100) at room temperature by in situ high‐resolution Rutherford backscattering spectrometry. Extensive in‐diffusion of Fe has been observed even for the coverage of 0.0325 ML of Fe. At this coverage the Si crystal structure is apparently still conserved. Every second Si layer is depleted of Fe, thus giving rise to compositional oscillations of Fe. At higher coverages strong interdiffusion occurs resulting in the formation of silicides at the interface. Even at 9.2 ML of Fe coverage, no pure Fe layers were observed.

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Growth of Fe on Si (100) at room temperature and formation of iron silicide

Cited by 60 publications

References 25 publications

Electron spectroscopic studies of iron and iridium silicides

Electron spectroscopic studies of iron and iridium silicides

Critical Oxide Thickness for Efficient Single‐Walled Carbon Nanotube Growth on Silicon Using Thin SiO₂ Diffusion Barriers

Initial stages of growth of iron on silicon for spin injection through Schottky barrier

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Growth of Fe on Si (100) at room temperature and formation of iron silicide

Cited by 60 publications

References 25 publications

Electron spectroscopic studies of iron and iridium silicides

Electron spectroscopic studies of iron and iridium silicides

Critical Oxide Thickness for Efficient Single‐Walled Carbon Nanotube Growth on Silicon Using Thin SiO2 Diffusion Barriers

Initial stages of growth of iron on silicon for spin injection through Schottky barrier

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Critical Oxide Thickness for Efficient Single‐Walled Carbon Nanotube Growth on Silicon Using Thin SiO₂ Diffusion Barriers