Growth of Epitaxial ZnO Thin Films by Organometallic Chemical Vapor Deposition

Abstract

Organometallic chemical vapor deposition of ZnO on sapphire, using the reaction of diethylzinc with H20/H2, N20/N2, and CO2/H2 oxidizing gas systems, has been studied. Epitaxial films have been achieved at temperatures of 400 ~ and 730~ respectively, in the first two systems. The films have been characterized using scanning electron microscopy (SEM), reflection electron diffraction (RED), and surface acoustic wave techniques.* Electrochemical Society Active Member.

Decomposition kinetics of tertiarybutanol and diethylzinc used as precursor sources for the growth of ZnO

“…ZnO, which is nowadays one of the most studied semiconductors for opto-electronic applications, was usually grown by oxidizing dimethylzinc (DMZn) or diethylzinc (DEZn) with pure O 2 [4][5][6] or H 2 O [6,7], but pre-reactions in the upstream part of the reactor were observed. Alternative oxidants such as CO 2 [8] or N 2 O [6,[9][10][11][12][13] were used to solve this issue but the growth temperature is much higher (above 800 1C). Another possibility is the use of DEZn in combination with oxygencontaining heterocyclic compounds such as furan (C 4 H 4 O) [14] or tetrahydrofuran (C 4 H 8 O) [15,16].…”

MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si

“…ZnO thin films have been grown by a variety of techniques, such as radiofrequency or magnetron sputtering [9,10], spray pyrolysis [11], molecular beam epitaxy (MBE) [5][6][7] and metalorganic chemical vapour deposition (MOCVD) [12][13][14][15][16] [15] undergo a serious pre-reaction with oxygen leading to heavy particulate contamination and blocked reactor inlet lines. This pre-reaction can be reduced by the use of less reactive oxygen sources such as N 2 O [16,17] or NO 2 [16].…”

“…This pre-reaction can be reduced by the use of less reactive oxygen sources such as N 2 O [16,17] or NO 2 [16]. All these have proved unsatisfactory giving only very low ZnO growth rates.…”

Growth properties of thin film ZnO deposited by MOCVD with n-butyl alcohol as the oxygen precursor

“…However, severe premature reactions invariably occur and, the use of less reactive oxygen sources including CO 2 , N 2 O [9] and oxygen containing heterocycles [10] have been investigated. This paper follows the approach first employed by Oda et al [11], who proposed alcohols as more controlled oxidizing agents.…”