Growth properties of thin film ZnO deposited by MOCVD with n-butyl alcohol as the oxygen precursor

Effect of deposition conditions on the growth rate and electrical properties of ZnO thin films grown by MOCVD

“…The decrease in growth rate at higher VI/II ratio can be explained by competitive adsorption of species on the growth surface. Lamb and Irvin recently reported a similar phenomenon for ZnO thin films grown by using nbutayl, an isomer of TBOH, on glass substrate [9]. When TBOH and DEZn are used for deposition of ZnO, an intermediate product, alkylzinc alkoxide, is formed in the gas phase prior to the deposition of the ZnO films on the substrate surface [10].…”

“…At higher VI/II ratios, it is evident that the alkylzinc alkoxide competes with the TBOH for adsorption sites. If TBOH was preferentially adsorbed onto the growth surface, it would block growth sites and reduce the growth rate [9]. Figure 2 shows the growth rate as a function of the DEZn flow rate for films grown at a substrate temperature of 380 °C and a VI/II molar ratio of 60.…”

Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions

“…Indeed, the presence of stable oxonium ion is responsible for Zn oxidation when using t-BuOH as an oxidizer. 16 However, the relative abundance of oxonium ion decreases drastically due to pyrolysis of t-BuOH which starts at elevated temperatures, likely Ͼ385°C in our growth conditions. 12 Thus, the growth at temperaturesϾ 385°C results in insufficient oxidation and formation of another kind of vacancy cluster with the W parameter clearly lower comparing to that observed in the Zn-lean case.…”

Cadmium Telluride Solar Cells on Ultrathin Glass for Space Applications

“…The precursors used in these experiments were Diethyzinc (DEZn), Tertiary-butanol (TBA) and Trimethylaluminium (TMA) at a substrate temperature of 400 o C. The TBA to DEZn ratio was maintained at 3:1 thus providing an excess of oxygen and avoiding zinc rich films in which optical transparency would be greatly reduced [13]. Previous authors have shown that, depending upon deposition temperature and technique there is a wide window of aluminium incorporation (1 to 10 atomic %) which will yield highly conducting films [14,15].…”