Growth of diamond thin films on silicon and TEM observation of the interface

Kobayashi, Ken; Karasawa, Shiro; Watanabe, Takeshi; Togashi, Fumitaka

doi:10.1016/s0022-0248(08)80110-8

Cited by 34 publications

(5 citation statements)

References 7 publications

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“…The SiC layer always exists between the diamond and the Si substrate 28 . In the case of PS substrate, it is easily carbonized during growth due to its porous structure.…”

Section: Resultsmentioning

confidence: 99%

Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations

et al. 2015

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“…The SiC layer always exists between the diamond and the Si substrate 28 . In the case of PS substrate, it is easily carbonized during growth due to its porous structure.…”

Section: Resultsmentioning

confidence: 99%

Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations

et al. 2015

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“…4 The negative bias enhanced nucleation in microwave plasma CVD has been popularly used for growth of oriented diamond films. Nucleation is considered very important in diamond growth for its influence on growth rate, morphology, and other qualities.…”

Section: Evidence Of the Role Of Positive Bias In Diamond Growth By Hmentioning

confidence: 99%

Evidence of the role of positive bias in diamond growth by hot filament chemical vapor deposition

Cui

Fang

1996

Applied Physics Letters

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Nucleation and bulk film growth kinetics of nanocrystalline diamond prepared by microwave plasmaenhanced chemical vapor deposition on silicon substratesEarly stages of diamond growth by chemicalvapor deposition monitored both by electron spectroscopies and microstructural probes Experimental approach to the mechanism of the negative bias enhanced nucleation of diamond on Si via hot filament chemical vapor deposition

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“…An intermediate amorphous layer of 2 nm on a Si substrate was detected in the EA CVD method, formed probably due to the electron bombardment [85,86]. Belton et al [lo71 have shown by in situ measurements in the H F CVD method that the carbonaceous contamination and the SiO, layer present prior to growth on diamondscratched Si substrates were removed in the first 15 min of growth and then a S i c layer was grown.…”

Section: Early Stages Of Nucleation the Intermediate Layermentioning

confidence: 99%

“…Glass et al [91] reported nucleation densities up to 10" cm-2 on mirror-polished Si wafers in MA CVD. Kobayashi et al [85] have investigated the influence of a positive bias applied to the surface (between 0 and 140 V). In all cases diamond was synthesized in 2 h, with 60 to 140 V applied.…”

Section: Influence Of Synthesis Conditions On the Nucleation Density mentioning

confidence: 99%

Nucleation and Selective Deposition of Diamond Thin Films

Popovici

Prelas

1992

Phys. Stat. Sol. (a)

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Diamond has great potential for electronic, optical, mechanical, chemical, and nuclear applications due to its superior properties. However, natural diamond is rare and expensive, being a metastable phase at normal pressure and temperature. The diamond synthesis at high temperatures and high pressures (HTHP), where diamond is a stable phase [l], was a breakthrough for large scale industrial applications. However, synthetic diamond is used mainly in abrasive and cutting tools industries [2], the crystals obtained by the HTHP method being too small and expensive for many applications in optics, electronics, or other industries [3].Polycrystalline as well as single-crystal films of diamond on single-crystal diamond substrates were first obtained in the seventies by the Russian team of Spitsyn, Bouilov, Derjaguin, and coworkers [4 to 101 by the gas chemical transport reaction (CTR) method. Crystals of several micrometers in size and polycrystalline films, grown on various foreign substrates (Cu, Au, Si, W, Mo), were reported by the same team [8].

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Growth of diamond thin films on silicon and TEM observation of the interface

Cited by 34 publications

References 7 publications

Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations

Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations

Evidence of the role of positive bias in diamond growth by hot filament chemical vapor deposition

Nucleation and Selective Deposition of Diamond Thin Films

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