1991
DOI: 10.1016/0022-0248(91)90850-5
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Growth of CuGaS2 by alternating-source-feeding MOVPE

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Cited by 9 publications
(3 citation statements)
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“…In the majority of cases found in Tables –, the supercycle scheme is used to combine two separate binary ALD processes that share one element (e.g., O, N, S) into a single ternary process. Some studies implement deposition with multiconstituent precursors to introduce more than one atom into the film with a single precursor, ,, ,,,, and others eschew the supercycle pulsing strategy in other ways ,,, , as discussed in Section ; however, these are far less common among the works shown in the tables. Regarding the use of these alternative approaches, Si-containing compounds are of particular note as SiO 2 itself is often difficult to grow on its own. ,,,,,, A number of studies have successfully deposited Si-containing materials by ALD by using precursor strategies other than supercycles.…”
Section: Overview Of Ternary and Quaternary Ald Processesmentioning
confidence: 99%
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“…In the majority of cases found in Tables –, the supercycle scheme is used to combine two separate binary ALD processes that share one element (e.g., O, N, S) into a single ternary process. Some studies implement deposition with multiconstituent precursors to introduce more than one atom into the film with a single precursor, ,, ,,,, and others eschew the supercycle pulsing strategy in other ways ,,, , as discussed in Section ; however, these are far less common among the works shown in the tables. Regarding the use of these alternative approaches, Si-containing compounds are of particular note as SiO 2 itself is often difficult to grow on its own. ,,,,,, A number of studies have successfully deposited Si-containing materials by ALD by using precursor strategies other than supercycles.…”
Section: Overview Of Ternary and Quaternary Ald Processesmentioning
confidence: 99%
“…In the absence of characterization to elucidate these effects, the ALD processes may be run under nonoptimized conditions (e.g., subsaturation) which can lead to deviation from the expected growth characteristics. Finally, the effect of growth temperaturewhich is typically around 200–250 °Cis rarely explored, and when it is, these more complex materials do not often show the presence of an ALD temperature window. ,,,,, These many potential sources of nonidealities and complex behavior make studying multicomponent systems challenging.…”
Section: Overview Of Ternary and Quaternary Ald Processesmentioning
confidence: 99%
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