Growth of cubic (zinc blende) CdSe by molecular beam epitaxy

Abstract

We report the growth of cubic (zinc blende) CdSe epilayers on [100] GaAs substrates by molecular beam epitaxy. The lattice constant of the CdSe epilayers is 6.077 Å, and the energy gap is 1.75, 1.74, and 1.67 at 10, 80, and 300 K, respectively.

Study of Substrate Diffusion in Epitaxial N-Type CdSe Films Grown on GaAs (001) by Pulsed Laser Ablation

“…Figure 2 is an example of the x-ray diffraction patterns obtained from CdSe films (sample CS6) prepared in this work. Only (002) and (004) peaks were found in the 10" 5 26 170" range, corresponding to a CdSe epilayer that has a cubic zinc blend structure and (001) orientation [2]. The lattice parameter determined from the diffraction pattern is -6.09 A, which is very similar to the values obtained in other work [2][3][4].…”

“…Only (002) and (004) peaks were found in the 10" 5 26 170" range, corresponding to a CdSe epilayer that has a cubic zinc blend structure and (001) orientation [2]. The lattice parameter determined from the diffraction pattern is -6.09 A, which is very similar to the values obtained in other work [2][3][4]. Most of the CdSe films prepared in this work exhibited diffraction patterns similar to the one shown in Fig.…”

“…Epitaxial CdSe films have been grown on GaAs (001) and on ZnSe/GaAs(001) by molecular beam epitaxy (MBE) [2,3] and metalorganic MBE [4]. Recently, films of epitaxial CdSe, as well as other compound semiconductors [5], were also grown on (001) GaAs by pulsed laser deposition (PLD) [6].…”

Cd(Mg)Se Single Layers and CdSe/CdMgSe Heterostructures Grown by Molecular Beam Epitaxy on InAs(001) Substrates

“…T aki ng i nto account the ab o ve m entio ned facto rs, we esti m ate the comp ositi ona l dep endence of the CdMg Se band-gap energy using the fol l owing equa ti on (see a lso Fi g. 3): (2 ) where E M g Se G and E C dSe G are the energy gaps of Mg Se and CdSe, respecti vely; C i s the b owi ng pa ra meter of the CdMg Se al l oy. The zinc-bl ende CdSe ba nd-gap energy has been found fro m PL of bul k CdSe/ InAs l ayers to b e 1.746 eV, whi ch i s i n good agreem ent wi th the da ta rep orted before [9]. There ha ve b een vari ous esti m ates of the energy gap of \ pure" Mg Se, ra ng i ng fro m 3.59 to 5.60 eV [10,11].…”

Fabricación y caracterización de diodos emisores de luz con emisión en la región verde azul

“…Por otra parte, desde que se reportó el crecimiento de una película delgada de CdSe con estructura cúbica, los sistemas formados por pozos cuánticos (QWs) de CdSe entre barreras de ZnSe y de Zn 1-x Cd x Se entre barreras de ZnSe, han sido ampliamente estudiados (Samarth et al, 1989;Juza et al, 1992) principalmente porque se ha demostrado que pueden ser usados como región activa en dispositivos emisores de luz dentro de la región de 460-539 nm del espectro visible (Haase, Qui, DePuydt & Cheng, 1991).…”