2020
DOI: 10.1016/j.jallcom.2019.152309
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Growth of CdSe/MoS2 vertical heterostructures for fast visible-wavelength photodetectors

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Cited by 33 publications
(23 citation statements)
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“…362 Likely, CdSe nanoplates were vertically assembled on MoS 2 monolayer to develop vertical CdSe/MoS 2 heterostructures. 363 CdSe/MoS 2 heterostructure-based photodetector exhibited photoresponsivity of 1.63 A W À1 and fast response speed of 370 ms. In another study, 2D MoS 2 nanosheet and 0D CdSe nanocrystal-based hybrid phototransistor were developed which showed substantially enhanced photoresponsivity of 2.5 Â 10 5 A W À1 and the rise/fall times of 60 ms. 323 The photocurrent of MoS 2 /CdSe hybrid photodetector increased with increasing laser power intensities at 405 nm.…”
Section: Mos 2 /Inorganic Semiconductor Heterostructuresmentioning
confidence: 99%
“…362 Likely, CdSe nanoplates were vertically assembled on MoS 2 monolayer to develop vertical CdSe/MoS 2 heterostructures. 363 CdSe/MoS 2 heterostructure-based photodetector exhibited photoresponsivity of 1.63 A W À1 and fast response speed of 370 ms. In another study, 2D MoS 2 nanosheet and 0D CdSe nanocrystal-based hybrid phototransistor were developed which showed substantially enhanced photoresponsivity of 2.5 Â 10 5 A W À1 and the rise/fall times of 60 ms. 323 The photocurrent of MoS 2 /CdSe hybrid photodetector increased with increasing laser power intensities at 405 nm.…”
Section: Mos 2 /Inorganic Semiconductor Heterostructuresmentioning
confidence: 99%
“…Highly dense and very large CdSe nanoplates have been assembled vertically onto a MoS2 monolayer through a two‐step CVD approach, showing high efficiency with strong photo responsiveness (12 A/W) and ultra‐fast photoresponse speed (∼370 μs) [73] . Highly pure and crystalline CdSxSe1-x nanostructures have been successfully synthesized via CVD, adjusting x to tune the material bandgap and the relationship with the constant lattice [74]…”
Section: Synthesis Methods Of Cdse Qdsmentioning
confidence: 99%
“…Furthermore, the preparation of lateral heterostructures with atomic sharp interface remains challenging because of the existence of the alloy at interface. Recently, the vapour phase methods have been utilized to prepare the vertical heterostructures with specific stacking orders and lateral heterostructures with sharp 1D interface [101][102][103][104][105][106][107][108][109][110][111][112][113][114].…”
Section: The Fabrication Of Heterostructures Based On 2d Mdcsmentioning
confidence: 99%