Growth of carbon nanotubes by sublimation of silicon carbide substrates

Mitchel, W. C.; Boeckl, John; Tomlin, D. W.; Lü, Weijie; Rigueur, John L.; Reynolds, Jonathan

doi:10.1117/12.590456

Cited by 5 publications

(2 citation statements)

References 15 publications

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“…Both hypotheses do not take into account the catalytic graphitization effect of oxygen. MWNTs are grown perpendicularly to the SiC surface in high vacuum (10 -4-5 torr) [1,2,5], and a SWNTs network is formed with their axes parallel to the SiC surface in UHV at 1650°C [7]. The O 1s peak at 530.3eV also appears in the CNTs/SiC sample grown in UHV, as shown in Fig.…”

Section: Resultsmentioning

confidence: 90%

“…These aligned CNTs are perpendicular to the surface, 3-5nm in diameter and 250nm in length after 30 minutes growth at 1700°C. Nagano et al [3,4] and Mitchel et al [5] recently reported that CNTs can grow on both Si-and C-face 6H-SiC or 4H-SiC at high vacuum. The growth rate of CNTs on Si-face SiC is about 65% of that on C-face SiC at 1700°C.…”

Section: Introductionmentioning

confidence: 99%

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Role of Oxygen in Growth of Carbon Nanotubes on SiC

Lü

Boeckl

Mitchel

et al. 2006

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Carbon nanotubes (CNTs) grown on SiC are metal-free, well-aligned, and with low structural defects. In this study, CNT formation on SiC is examined in high vacuum (10-5torr) and ultra-high vacuum (10-8torr). Multi-wall carbon nanotubes and graphitic structures are the main products on the SiC surface at 1400-1800°C in 10-5torr. Under ultra-high vacuum, the decomposition rate of SiC is much lower than in high vacuum, indicating that SiC is decomposed by oxidation reaction. Using X-ray photoelectron spectroscopy (XPS), the intensity of the O1s peak at 530.3 eV decreases with increasing take-off angle, indicating that this oxygen species exists on the walls of CNTs. The results show that oxygen with a low pressure not only oxidizes SiC, but also forms a highly thermally stable carbon-oxygen compound, and interacts with the CNTs at high temperatures.

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