2011
DOI: 10.1016/j.carbon.2010.09.021
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Growth of carbon nanotubes at temperatures compatible with integrated circuit technologies

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Cited by 44 publications
(38 citation statements)
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References 22 publications
(18 reference statements)
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“…Therefore, unless an accurate understanding of the catalyst heat-treatment and CNT growth mechanism is established, pre-determined and controlled growth will not be possible. As the temperature in the PTCVD system depends critically on the flow rates of gases and pressure inside the chamber, 34 we utilized this attribute of the system to confirm our second assumption. We turned the lamps on at 40% power under vacuum (1.6 × 10 -5 Torr) with no gases flowing through the chamber.…”
mentioning
confidence: 93%
“…Therefore, unless an accurate understanding of the catalyst heat-treatment and CNT growth mechanism is established, pre-determined and controlled growth will not be possible. As the temperature in the PTCVD system depends critically on the flow rates of gases and pressure inside the chamber, 34 we utilized this attribute of the system to confirm our second assumption. We turned the lamps on at 40% power under vacuum (1.6 × 10 -5 Torr) with no gases flowing through the chamber.…”
mentioning
confidence: 93%
“…The thermal barrier on the substrate support is made from a bilayer of Ti/TiN which helps to enhance the surface temperature [9]. Ni foil (Alfa Aesar, product 10254) was first cleaned by acetone, IPA and methanol and placed on the substrate holder.…”
Section: Methodsmentioning
confidence: 99%
“…Previously, we reported carbon nanotube synthesis by a photo-thermal chemical vapour deposition (PT-CVD) method [9,10]. PT-CVD can offer several technological advantages over conventional CVD compared to conventional thermal CVD methods.…”
Section: Introductionmentioning
confidence: 99%
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“…Lowering the growth temperature has frequently proven to be ineffective because the structural quality of nanotubes usually degrades as reaction temperatures are decreased. Chen et al [35] succeeded in growing CNTs at CMOS compatible temperature (350…”
Section: Binder-free Immobilizationmentioning
confidence: 99%