Growth of cadmium sulfide single crystal by the sublimation method

Jeong, T. S.; Lee, C.I.; Yu, P. Y.; Shin, Yu-Ju; Shin, Homin; Kim, T.S.; Lee, H.; Kim, J.Y.; Hong, Kwangjoon

doi:10.1016/0022-0248(95)00142-5

Cited by 7 publications

(3 citation statements)

References 17 publications

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“…A CdS seed is placed in the low temperature zone of the growth tube, and CdS powder (6N) in the high temperature zone. The five growth zones can be adjusted to hold the growth surface at the same temperature and gradient without using the puller [5,6] . In this experiment, the growth tube is a semi-closed one, in which the total pressure can be adjusted by vacuum pump and the flow rate of argon (Ar).…”

Section: Methodsmentioning

confidence: 99%

Growth of CdS crystals by the physical vapor transport method

Cheng¹,

Ye²,

Wei³

et al. 2009

J. Semicond.

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Based on the physical vapor transport (PVT) method, the growth of large-size CdS crystals inside a vertical semi-closed tube is studied. Firstly, in order to ensure 1D diffusion-advection transport, multi-thin tubes are used in the growth tube. The XRD spectra of the CdS crystal grown in this configuration indicates that the crystal quality has clearly been improved, where the FWHM is 58.5 arcsec. Secondly, theoretical and experimental growth rates under different total pressures are compared; the results show that the experiential growth rate equation is valid for our semi-tube growth, and it could be used to estimate the growth rate and maximum growth time under different total pressures.

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Section: Methodsmentioning

confidence: 99%

Growth of CdS crystals by the physical vapor transport method

Cheng¹,

Ye²,

Wei³

et al. 2009

J. Semicond.

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“…We take the electron affinity and band gap of CdS to be 4.5 eV and 2.4 eV, respectively [18,35,36]. The estimated value of the Fermi level position from equation ( 3) is E cF = E c − E F ≈ 0.2 eV (for the relative electron mass m n /m 0 = 0.16 [37] and n = (2.2 ± 0.3) × 10 15 cm −3 calculated on the basis of ρ = (1.0 ± 0.03) × 10 2 cm and value of electron mobility µ n = (3 ± 0.4) × 10 2 cm 2 V −1 s −1 which is averaged over the data taken from various papers [38][39][40][41]). Then the CdS WF is CdS = χ CdS + E cF ≈ 4.7 eV.…”

Section: Analysis Of I -V Characteristics and Estimates Of The Barrie...mentioning

confidence: 99%

Interfacial properties and formation of a Schottky barrier at the CdS/PEDOT : PSS hybrid junction

Kislyuk¹,

Fedorchenko²,

Смертенко³

et al. 2010

J. Phys. D: Appl. Phys.

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The behaviour of a hybrid heterojunction (HJ) of an inorganic semiconductor cadmium sulfide (CdS) single crystal (102 Ω cm) and an organic conducting polymer poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonic acid) (PEDOT : PSS) has been studied using electrical and photoelectrical measurements as well as ultraviolet photoelectron spectroscopy (UPS) with in situ Ar ion etching. Photovoltaic data and current–voltage characteristics demonstrated that the HJ is a Schottky diode with an electron barrier height ca φb = 0.5 eV. The estimates based on the energy balance at the interface allowed us to assert on the presence of an interfacial dipole with an energy offset of −0.3 eV. A dipole barrier of the same magnitude was also clearly revealed from the UPS measurements directly.

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“…CdS bulk single crystals have been grown by a few groups using the physical vapor transport (PVT) method, which has been indicated to be an effective method on the growth of II-VI bulk single crystals [7][8][9][10] . CdS single crystals with a size of about Φ8 × 10 mm 2 and Φ15 × 10 mm 2 have been successfully grown using the PVT method from Sankar's group and Hong's group, respectively [11,12] .…”

Section: Introductionmentioning

confidence: 99%

High infrared transmittance CdS single crystal grown by physical vapor transport

Huo

Zhao

et al. 2018

J. Semicond.

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Φ55 × 15 mm2 CdS bulk single crystal with high infrared transmittance was grown by physical vapor transport. The single crystal has a consistent structure from top to bottom, which was confirmed by X-ray diffraction. The (002) full-width at half-maximum of the X-ray diffraction was measured to be 60.00 arcsec, indicating a good quality of the structure. Hall mobility, specific resistivity, and carrier concentration for the top and bottom of the crystal were observed as well. Transmittance for the CdS single crystal was measured to be higher than 70% from 2.5 to 4.5 µm, making the single crystal an important candidate for infrared window materials. Furthermore, the absorption mechanism of the CdS single crystal was analyzed.

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Growth of cadmium sulfide single crystal by the sublimation method

Cited by 7 publications

References 17 publications

Growth of CdS crystals by the physical vapor transport method

Growth of CdS crystals by the physical vapor transport method

Interfacial properties and formation of a Schottky barrier at the CdS/PEDOT : PSS hybrid junction

High infrared transmittance CdS single crystal grown by physical vapor transport

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