Growth of CdS crystals by the physical vapor transport method

Abstract

Based on the physical vapor transport (PVT) method, the growth of large-size CdS crystals inside a vertical semi-closed tube is studied. Firstly, in order to ensure 1D diffusion-advection transport, multi-thin tubes are used in the growth tube. The XRD spectra of the CdS crystal grown in this configuration indicates that the crystal quality has clearly been improved, where the FWHM is 58.5 arcsec. Secondly, theoretical and experimental growth rates under different total pressures are compared; the results show that the experiential growth rate equation is valid for our semi-tube growth, and it could be used to estimate the growth rate and maximum growth time under different total pressures.

High infrared transmittance CdS single crystal grown by physical vapor transport

“…CdS bulk single crystals have been grown by a few groups using the physical vapor transport (PVT) method, which has been indicated to be an effective method on the growth of II-VI bulk single crystals [7][8][9][10] . CdS single crystals with a size of about Φ8 × 10 mm 2 and Φ15 × 10 mm 2 have been successfully grown using the PVT method from Sankar's group and Hong's group, respectively [11,12] . Φ40 × 30 mm 2 CdS single crystal has been grown by Cheng et al in our group using the same method [13] .…”