Growth of bulk GaN crystal by Na flux method under various conditions

Mori, Yusuke; Imade, Mamoru; Murakami, Kosuke; Takazawa, Hideo; Imabayashi, Hiroki; Todoroki, Yuma; Kitamoto, K.; Maruyama, Mihoko; Yoshimura, Masashi; Kimura, Yasuo; Sasaki, T.

doi:10.1016/j.jcrysgro.2011.12.026

Cited by 79 publications

(50 citation statements)

References 31 publications

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“…Recently, Sasaki et al researched seed induced GaN crystal growth by the Na flux method. The obtained bulk GaN crystal was with a pyramidal shape and height in 15 mm and diameter in 20 mm [2]. These works suggest that the Na flux method is perhaps promising for low-cost and large scale growth of GaN crystals.…”

Section: Introductionmentioning

confidence: 64%

Morphology and Characterization of GaN Crystals Grown by Na Flux Method under 7 MPa Nitrogen Pressure

Zhou¹,

Li²,

Jingsi³

et al. 2013

Ferroelectrics

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A large number of GaN pyramid shaped crystals with the maximum size of about 3 mm have been grown by Na flux method. The morphologies of GaN crystals were observed with optical microscope and scanning electron microscope (SEM). The quality of GaN crystal was checked by X-ray powder diffraction (XRD) and photoluminescence (PL) spectra. The SEM photographs show most of the crystals were hexagonal pyramidal, and there were a considerable number of hexagonal bipyramidal GaN crystals with twin plane. The relationships between GaN crystal morphology and the growth rate were also discussed.

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Section: Introductionmentioning

confidence: 64%

Morphology and Characterization of GaN Crystals Grown by Na Flux Method under 7 MPa Nitrogen Pressure

Zhou¹,

Li²,

Jingsi³

et al. 2013

Ferroelectrics

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“…They are liquid-phase growth technologies: the ammonothermal method [11][12][13] and the Na flux method. [14][15][16][17] We evaluated a GaN substrate made by the Na flux method. It was evaluated by measuring the leakage current and the leakage points on pn diodes fabricated on the Na flux GaN substrate.…”

Section: Vertical Gan Power Devicesmentioning

confidence: 99%

Recent progress of GaN power devices for automotive applications

Kachi

2014

Jpn. J. Appl. Phys.

300

169

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Many power switching devices are used in hybrid vehicles (HVs) and electric vehicles (EVs). To improve the efficiency of HVs and EVs, better performance characteristics than those of Si power devices, for example, lower on-resistance, higher speed, higher operation temperature, are required for the power devices. GaN power devices are promising candidates for satisfying the requirements. A lateral GaN power device with a blocking voltage of 600 V and a vertical GaN power device with a blocking voltage of 1200 V are suitable for medium power applications for sub systems and high-power applications for the drive of main motors, respectively. Power device applications in HVs and EVs and the current status of the GaN power device are presented. The reliability of the GaN power device is also discussed.

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“…In the Na flux method, stirring the solution during crystal growth is effective to improve crystal quality [37]. The morphology of GaN crystals got better, and the yields of GaN crystals were also increased by stirring techniques [38].…”

Section: Dislocation Behavior During Lpe Growth Of Gan By the Na Fluxmentioning

confidence: 99%