Growth of Boron-Doped-ZnO by RF Magnetron Sputtering for CIGS Solar Cells

Hur, Jae Sung; Kim, Jihye; Jang, Samseok; Song, Jung-Bin; Byun, Dongjin; Son, Chang-Sik; Yun, Jae Ho; Yoon, Kyung Hoon

doi:10.3938/jkps.53.442

Cited by 8 publications

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“…Among the TCOs, zinc oxide (ZnO) is popular because of its interesting structural, chemical, optical, and electrical properties [1][2][3]. It was one of the first studied wide band gap semiconductors with respect to its surface properties, optical properties, and gas sensing properties [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Solution-Processable Growth and Characterization of Dandelion-like ZnO:B Microflower Structures

et al. 2021

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Intrinsic and dandelion-like microflower nano-rod structures of boron-doped ZnO thin films were synthesized with an ecofriendly and cost-effective chemical bath deposition technique from an aqueous solution of zinc nitrate hexahdyrate [Zn(NO3)2.6H2O] as a precursor solution and boric acid as a doping solution. The boron concentrations were 0.1, 0.3, 0.5, 1.0, 3.0, 5.0, and 7.0 by volume. Scanning electron micrographs showed that doping with boron appears to hinder the vertical alignment of crystallites. Additionally, independent hexagonal nano-rod structures were observed to coalesce together to form dandelion-like structures on the film’s surface. The atomic ratio of the elements was determined via the X-ray photoemission spectrum technique. There were no substantial changes in the vibration structure of the film upon doping in terms of the Raman spectra. The optical band gap of ZnO (3.28 eV) decreased with B doping. The band gap of the ZnO:B film varied between 3.18 and 3.22 eV. The activation energy of the ZnO was calculated as 0.051 eV, whereas that of the ZnO:B film containing 1.0% B was calculated as 0.013 eV at low temperatures (273–348 K), versus 0.072 eV and 0.183 eV at high temperatures (348–523 K), respectively. Consequently, it can be interpreted that the 1% B-doped ZnO, which has the lowest activation energy at both low and high temperatures, may find some application areas such as in sensors for gases and in solar cells.

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Section: Introductionmentioning

confidence: 99%

Solution-Processable Growth and Characterization of Dandelion-like ZnO:B Microflower Structures

et al. 2021

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“…The growth of boron-doped zinc oxide (BZO) thin films by RF magnetron sputtering has advantages of better IR transmission than that of aluminum-doped zinc oxide (AZO) thin films, 14) and AZO thin films prepared by successive ion layer adsorption and reaction have deep donor levels. 15) Although BZO thin films deposited by spray pyrolysis have been reported, 16) these BZO thin films showed a large resistivity range 17,18) and there has been no report regarding various resistivities as a function of temperature for the spray-pyrolized BZO thin film.…”

Section: Introductionmentioning

confidence: 99%

Effects of Doping Ratio and Thermal Annealing on Structural and Electrical Properties of Boron-Doped ZnO Thin Films by Spray Pyrolysis

Hsu

Lee

et al. 2013

Jpn. J. Appl. Phys.

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Boron-doped zinc oxide (BZO) thin films have been fabricated by spray pyrolysis on a glass substrate. The morphology and electrical properties of the thin films were investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses were performed. It was found that [B]/[Zn] ratio altered both the microstructure and concentration of the BZO thin films. The film grain size was reduced by increasing the [B]/[Zn] ratio. The highest Hall mobility was 3.65 cm 2 V À1 s À1 for the undoped ZnO thin film, and the highest carrier concentration of 1:0 Â 10 19 cm À3 was achieved for the as-deposited BZO thin film with [B]/[Zn] = 1.5 at. %. Conductivity was determined at different measurement temperatures and shallow donors provided the dominate conduction mechanism for the as-deposited BZO thin films. After 600 C annealing, shallow level reduction and donors with a high activation energy of 129 AE 6 meV in the BZO thin films were characterized, and the shallow donors that dominate the carrier concentration for the as-deposited spray-pyrolized BZO thin film were eliminated.

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Photovoltaics literature survey (No. 65)

Shalav

2008

Progress in Photovoltaics

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Growth of Boron-Doped-ZnO by RF Magnetron Sputtering for CIGS Solar Cells

Cited by 8 publications

References 0 publications

Solution-Processable Growth and Characterization of Dandelion-like ZnO:B Microflower Structures

Solution-Processable Growth and Characterization of Dandelion-like ZnO:B Microflower Structures

Effects of Doping Ratio and Thermal Annealing on Structural and Electrical Properties of Boron-Doped ZnO Thin Films by Spray Pyrolysis

Photovoltaics literature survey (No. 65)

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