Growth of biaxially textured BaxPb1−xTiO3 ferroelectric thin films on amorphous Si3N4

Brewer, R. T.; Boyd, David A.; El‐Naggar, Mohamed Y.; Boland, Stacey W.; Park, Young Bae; Haile, Sossina M.; Goodwin, David G.; Atwater, Harry A.

doi:10.1063/1.1806994

Cited by 15 publications

(6 citation statements)

References 18 publications

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“…Researchers have used this technique to produce highly (001) oriented Ba 0.6 Sr 0.4 TiO 3 films on various substrates with excellent dielectric tunability/loss ratios for frequency agile devices . IBAD‐MgO has also been applied to amorphous Si 3 N 4 substrates for integration of Ba x Pb 1 − x TiO 3 thin films . And more recently IBAD‐MgO substrates have been used to produce BaTiO 3 thin films with single‐crystal‐like ferroelectric properties .…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial Pb(Zr,Ti)O₃ Thin Films on Flexible Substrates

Shelton

Gibbons

2011

Journal of the American Ceramic Society

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It is well known that the piezoelectric properties of a thin film can be influenced by crystallographic texture. At the extreme case, epitaxial thin films can be deposited on single crystal substrates (with appropriate lattice matching) to effectively achieve a single crystal thin film. Here, the maximum advantage of orientation dependence is found. Typically this has required small, expensive single crystalline substrates. In the past 10 years, however, the technique of ion beam assisted deposition has been developed for applying a biaxially textured template to an arbitrary smooth surface. This has opened up a new realm of materials integration possibilities, with the prime example being high-temperature superconducting wires. Here, the same template is utilized for deposition of epitaxial Pb(Zr,Ti)O 3 thin films onto LaNiO 3 and La 0.7 Sr 0.3 MnO 3 -coated flexible substrates. Chemical solution deposition (CSD) is used to produce PZT thin films with very high (00l) orientation and excellent in-plane orientation. Macroscopic ferroelectric measurements depict very square hysteresis behavior, with high remnant polarization of~40 lC/cm 2 . Piezoresponse force microscopy and local hysteresis measurements were used to image the microscopic domain structure and to demonstrate the piezoelectric behavior in these materials.

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Section: Introductionmentioning

confidence: 99%

“…It is likely that a reduction in defect pinning can be achieved with fewer high‐angle grain boundaries and domain reorientation can be improved. Coupled with enhanced (00 l ) orientation, a biaxially textured piezoelectric thin film could potentially produce more than 90% of that of single crystal actuation …”

Section: Introductionmentioning

confidence: 99%

Epitaxial Pb(Zr,Ti)O₃ Thin Films on Flexible Substrates

Shelton

Gibbons

2011

Journal of the American Ceramic Society

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“…No such structure was observed for a PBT film on the biaxially textured MgO/Si 3 N 4 /Si template grown in the same batch, under the same processing conditions. 17 Plan view TEM indicated that the grain size for PBT on biaxially textured MgO (60 nm average) was indeed smaller than that for PBT on single-crystal MgO. We propose that this reduced grain size is the primary reason for absence of the 90°domain walls.…”

Section: Domain Characterizationmentioning

confidence: 84%

Characterization of Highly-Oriented Ferroelectric Pb_xBa_1−x TiO₃ Thin Films Grown by Metalorganic Chemical Vapor Deposition

2005

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Pb x Ba 1−x TiO 3 (0.2 ഛ x ഛ 1) thin films were deposited on single-crystal MgO as well as amorphous Si 3 N 4 /Si substrates using biaxially textured MgO buffer templates, grown by ion beam-assisted deposition (IBAD). The ferroelectric films were stoichiometric and highly oriented, with only (001) and (100) orientations evident in x-ray diffraction (XRD) scans. Films on biaxially textured templates had smaller grains (60 nm average) than those deposited on single-crystal MgO (300 nm average). Electron backscatter diffraction (EBSD) has been used to study the microtexture on both types of substrates and the results were consistent with x-ray pole figures and transmission electron microscopy (TEM) micrographs that indicated the presence of 90°domain boundaries, twins, in films deposited on single-crystal MgO substrates. In contrast, films on biaxially textured substrates consisted of small single-domain grains that were either c or a oriented. The surface-sensitive EBSD technique was used to measure the tetragonal tilt angle as well as in-plane and out-of-plane texture. High-temperature x-ray diffraction (HTXRD) of films with 90°domain walls indicated large changes, as much as 60%, in the c and a domain fractions with temperature, while such changes were not observed for Pb x Ba 1−x TiO 3 (PBT) films on biaxially textured MgO/Si 3 N 4 /Si substrates, which lacked 90°domain boundaries.

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“…Using single-image analysis of the RHEED patterns from the diffraction spots, determined in situ, they performed quantitative analysis of the biaxially textured MgO films ranging from ∼ 3-nm to 11-nm thick (Brewer et al 2001a;Brewer and Atwater 2002). Later, the MgO film was used as a template layer to grow biaxially textured ferroelectric Ba x Pb 1−x TiO 3 thin films (Brewer et al 2004). The out-of-plane orientation distribution and the in-plane orientation distribution were calculated using a kinematic electron diffraction model, assuming film-related parameters that included angular ranges of both out-of-plane orientation distribution and in-plane orientation distribution, effective grain sizes, and electron penetration depth (Brewer et al 2000(Brewer et al , 2001bHartman et al 2002).…”

Section: Mgo Film On Amorphous Substrate Si 3 N 4 On Si(001)mentioning

confidence: 98%

RHEED Transmission Mode and RHEED Pole Figure

Wang

2013

RHEED Transmission Mode and Pole Figures

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In the last chapter, we presented the principles of x-ray diffraction and the construction of a pole figure, particularly the pole figure constructed from the diffraction patterns obtained by an area detector. In this chapter, we describe the similarities and differences between reflection high-energy electron diffraction (RHEED) transmission mode and x-ray diffraction. Detailed descriptions of the diffraction space characteristics of RHEED transmission for a variety of crystal textures are given. We discuss kinematic simulations of RHEED patterns and the construction of RHEED pole figures from RHEED patterns. The relationship between RHEED pole figures and the orientation distribution function of biaxial texture is presented with examples. X-Ray Diffraction vs RHEEDMost thin films grown by common deposition techniques such as physical vapor deposition or chemical vapor deposition are not single crystals. Single crystals are grown only under specific favorable conditions. A major technique used for texture structure characterization is the x-ray pole figure. The typical photon energy used in x-ray diffraction is 8,048 eV (Cu K α ), while tens of kiloelectron volt electrons are used for reflection high-energy electron diffraction (RHEED). Here we discuss the similarities and differences between x-ray diffraction and the RHEED transmission mode. Strength of scattering cross sectionThe scattering cross section for electrons in solids is orders of magnitude higher than that for x-rays. For example, the total elastic electron scattering from Mo at 10 keV incident electron energy is on the order of 10 −19 m 2 (Browning 1991). In the energy range of 1-100 keV, the cross-section scales as E −0.5 in the low-energy regime and E −1 and Z 1.33 in the high-energy regime, where E is in units of keV and Z is the atomic number of an atom. For 1 keV photon, the total photon cross section from Pb is on the order of 10 −22 m 2 (Hubbell et al. 1975). The stronger scattering cross section of electrons provides a stronger electron diffraction signal from ultrathin films and nanostructures.

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Growth of biaxially textured BaxPb1−xTiO3 ferroelectric thin films on amorphous Si3N4

Cited by 15 publications

References 18 publications

Epitaxial Pb(Zr,Ti)O₃ Thin Films on Flexible Substrates

Epitaxial Pb(Zr,Ti)O₃ Thin Films on Flexible Substrates

Characterization of Highly-Oriented Ferroelectric Pb_xBa_1−x TiO₃ Thin Films Grown by Metalorganic Chemical Vapor Deposition

RHEED Transmission Mode and RHEED Pole Figure

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Growth of biaxially textured BaxPb1−xTiO3 ferroelectric thin films on amorphous Si3N4

Cited by 15 publications

References 18 publications

Epitaxial Pb(Zr,Ti)O3 Thin Films on Flexible Substrates

Epitaxial Pb(Zr,Ti)O3 Thin Films on Flexible Substrates

Characterization of Highly-Oriented Ferroelectric PbxBa1−x TiO3 Thin Films Grown by Metalorganic Chemical Vapor Deposition

RHEED Transmission Mode and RHEED Pole Figure

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Epitaxial Pb(Zr,Ti)O₃ Thin Films on Flexible Substrates

Epitaxial Pb(Zr,Ti)O₃ Thin Films on Flexible Substrates

Characterization of Highly-Oriented Ferroelectric Pb_xBa_1−x TiO₃ Thin Films Grown by Metalorganic Chemical Vapor Deposition