Growth of bi-axially textured Bi2Sr2Ca1Cu2O8+δ (2212) thin films on SrTiO3 substrate by sputtering method

Mori, Zon; Doi, Toshiya; Kawabata, Daishi; Ogata, Kenichi; Takahashi, K.; Matsumoto, Akiyoshi; Kitaguchi, Hitoshi; Hakuraku, Yoshinori

doi:10.1016/j.physc.2008.05.151

Cited by 9 publications

(6 citation statements)

References 7 publications

(6 reference statements)

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“…Several techniques for producing the thin films have been investigated in various laboratories to advance the qualities of thin films for devices. The parameters of the device can be controlled by the preparation techniques, some of which involving the molecular beam epitaxy (MBE) [7,8], dc sputtering [9], rf sputtering [10], chemical vapor deposition (CVD) [11,12] and pulsed laser deposition (PLD) techniques [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

The effects of the post-annealing time on the growth mechanism of Bi2Sr2Ca1Cu2O8+∂ thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD)

Nane

Özçelık

Abukay

2016

Ceramics International

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Bi 2 Sr 2 Ca 1 Cu 2 O 8 þ ∂ thin films were deposited on MgO (100) substrates by pulsed laser deposition (PLD). The effects of post-annealing time on the phase formation, the structural and superconducting properties of the films have been investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), temperature dependent resistivity (R-T), atomic force microscopy (AFM), and DC magnetization measurements. The films deposited at 600 1C were post-annealed in an atmosphere of a gas mixture of Ar (93%) and O 2 (7%), at 860 1C for 10, 30, and 60 min. All films have demonstrated a mainly single phase of 2212 with a high crystallinity (FWHM E 0.1591) and c-axis oriented. The critical temperature, T C , of the films annealed for 10, 30, and 60 min were obtained as 77, 78, and 78 K, respectively. The highest critical current density, J C , was calculated as 3.34 Â 10 7 A/cm 2 for the film annealed at 860 1C for 30 min at 10 K.

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Section: Introductionmentioning

confidence: 99%

The effects of the post-annealing time on the growth mechanism of Bi2Sr2Ca1Cu2O8+∂ thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD)

Nane

Özçelık

Abukay

2016

Ceramics International

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“…Since Bi-2212 is more stable than Bi-2223, which can only be obtained within a very narrow temperature window [30][31][32], it is easy to produce Bi-2212 phase in thin film form. The thin films of the Bi-2212 phase can be synthesized with various methods , such as molecular beam epitaxy (MBE) [33,34], DC sputtering [35], RF sputtering [36], chemical vapor deposition (CVD) [37,38], and pulsed laser deposition (PLD) techniques [2,3,9,13].…”

Section: Introductionmentioning

confidence: 99%

The effects of the post-annealing temperature on the growth mechanism of Bi2Sr2Ca1Cu2O8+ thin films produced on MgO (1 0 0) single crystal substrates by pulsed laser deposition (PLD)

Nane

Özçelık

Abukay

2013

Journal of Alloys and Compounds

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a b s t r a c tThe effects of post-annealing temperature were investigated on Bi 2 Sr 2 Ca 1 Cu 2 O 8+o thin films deposited on MgO (1 0 0) substrates by pulsed laser deposition (PLD). The structural and superconducting properties of the films have been determined by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), temperature depende nt resistivity (R-T), and DC magnetization measure ments. The films which were deposited at 600 °C were post-annealed in an atmosphere of a gas mixture of Ar (93%) and O 2 (7%), at temperature ranging between 800 and 880 °C. This resulted in films which exhibited a single phase of 2212 with a high crystallini ty (FWHM % 0.16°) and texturing along the c-axis, perpendicular to the plane of the substrate. An optimum temperature of 860 °C was found for the post-annealing thermal treatment. The critical temperature, T C , of the films was measure d as 82 K and the critical current density, J C , was calcu lated as 3 Â 10 7 A/cm 2 for the film annealed at 860 °C.

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“…However, the critical current density (J c ) of BSCCO multifilamentary superconducting wires by PIT is lower than Y 1 Ba 2 Cu 3 O x (YBCO) coated conductors. This is because the in-plane crystal grains in the BSCCO system act as weak links for current transport [2][3][4][5]. To improve the J c of a BSCCO system, it is necessary to reduce the number of grain boundaries.…”

Section: Introductionmentioning

confidence: 99%

Crystal growth of (Bi, Pb)₂Sr₂Ca₂Cu₃O thin films fabricated via post annealing

Mori

Koba

2019

J. Phys. Commun.

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Post-annealing of superconducting Bi 2 Sr 2 Ca n-1 Cu n O x (BSCCO) thin films deposited by sputtering is essential for obtaining a single 2223 phase. However, optimum annealing temperature is limited to a very narrow range, needing to pass liquid phase for 2223 crystallization while not exceeding reevaporation point. In this study, we optimized annealing conditions and observed the crystal growth process. As a result, single phase 2223 thin films with critical temperature of 108 K were obtained at 850°C, while mixed phase thin films of 2223 and 2212 were grown above 855°C. This is due to the reevaporation of the thin film compounds, and these results reflect the recrystallization process after melting.

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Growth of bi-axially textured Bi2Sr2Ca1Cu2O8+δ (2212) thin films on SrTiO3 substrate by sputtering method

Cited by 9 publications

References 7 publications

The effects of the post-annealing time on the growth mechanism of Bi2Sr2Ca1Cu2O8+∂ thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD)

The effects of the post-annealing time on the growth mechanism of Bi2Sr2Ca1Cu2O8+∂ thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD)

The effects of the post-annealing temperature on the growth mechanism of Bi2Sr2Ca1Cu2O8+ thin films produced on MgO (1 0 0) single crystal substrates by pulsed laser deposition (PLD)

Crystal growth of (Bi, Pb)₂Sr₂Ca₂Cu₃O thin films fabricated via post annealing

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Growth of bi-axially textured Bi2Sr2Ca1Cu2O8+δ (2212) thin films on SrTiO3 substrate by sputtering method

Cited by 9 publications

References 7 publications

The effects of the post-annealing time on the growth mechanism of Bi2Sr2Ca1Cu2O8+∂ thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD)

The effects of the post-annealing time on the growth mechanism of Bi2Sr2Ca1Cu2O8+∂ thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD)

The effects of the post-annealing temperature on the growth mechanism of Bi2Sr2Ca1Cu2O8+ thin films produced on MgO (1 0 0) single crystal substrates by pulsed laser deposition (PLD)

Crystal growth of (Bi, Pb)2Sr2Ca2Cu3O thin films fabricated via post annealing

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Crystal growth of (Bi, Pb)₂Sr₂Ca₂Cu₃O thin films fabricated via post annealing