Growth of AlN and GaN crystals by sublimation

Мохов, Е. Н.; Wolfson, Albert

doi:10.1016/b978-0-08-102096-8.00012-4

Cited by 9 publications

(6 citation statements)

References 88 publications

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“…Synthesis method ceramics hot-press sintering [21], conventional solid-state reaction [22] powders self-propagating high-temperature synthesis (SHS) [23,24], carbothermal synthesis [25] thin films dual reactive co-sputtering [26], pulsed laser deposition [27], radio frequency magnetron sputtering [28], low-pressure metallorganic vapor phase epitaxy [29] polycrystals radio frequency magnetron sputtering [30], sublimation sandwich method [31], combustion synthesis [32,33] single crystals sublimation sandwich method (sublimation-recondensation method) [34], direct heating of the source using microwaves [35],…”

Section: Structural State Of Alnmentioning

confidence: 99%

Plasma Chemical Production Technology of AlN as High Thermal Conductivity Material

Aleksandrov¹,

Kim²,

Новиков³

et al. 2022

Preprint

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A technology for obtaining nanosized aluminum nitride powder by plasma-chemical synthesis is presented. Nitrogen gas (N2), melamine (C3H6N6) and ammonia (NH3) were used as a source of nitrogen. Aluminum powder of different fractions was used as a source of aluminum. The influence of the nitrogen source, the height of the injector, and the input power of the plasma equipment on the synthesized aluminum nitride powder is shown. The resulting aluminum nitride powder has a size d90=60 nm. The parameters of aluminum nitride synthesis did not in any way affect the granulometric composition of the synthesized powder materials. It was found that, due to the high binding energy, the nitrogen molecule (N2) reacts poorly with aluminum powder particles, as a result a mixture of nitrogen and ammonia gases was used in a ratio of 70/30 (mol.%) for aluminum nitride synthesis.

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Section: Structural State Of Alnmentioning

confidence: 99%

Plasma Chemical Production Technology of AlN as High Thermal Conductivity Material

Aleksandrov¹,

Kim²,

Новиков³

et al. 2022

Preprint

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“…Исследовались кристаллы AlN, выращенные методом сублимации на затравках AlN. Условия роста и используемые ростовые установки описаны ранее [10,11]. После выращивания кристаллы разрезались на пластины толщиной 0.5 мм, поверхность которых полировалась.…”

Section: технология приготовления кристаллов и методики исследованияunclassified

Спектроскопия Комбинационного Рассеяния, Инфракрасного Поглощения И Люминесценции Нитрида Алюминия, Легированного Бериллием

Бреев¹,

Яковлева²,

Кудрявцев³

et al. 2021

Физика И Техника Полупроводников

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The high-temperature (T = 1880◦C) Be-ions diffusion and electron irradiation influence on the AlN monocrystals optical properties were investigated. We demonstrated that Be diffusion into AlN leads to spectral properties change of the Raman scattering and infrared absorption. The analysis of the Raman and infrared absorption spectra of the AlN crystals, containing Be impurity, proves that Be impurity is a getter for intrinsic impurities, which are responsible for AlN crystals yellow color manifestation and spectral lines broadening

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“…Growth of high-quality crystals and epitaxial layers (EL) is possible in vacuum and in gas phase environment. SSM is successfully used for growth of SiC bulk crystals [13] and epitaxial layers [14] and also growth of GaN [15] and AlN [16] crystals. Schematic view of the sublimation sandwich system for growth of the doped SiC crystals.…”

Section: Sic Doping During Sublimation Growthmentioning

confidence: 99%

Doping of SiC Crystals during Sublimation Growth and Diffusion

Мохов¹

2019

Crystal Growth

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The preparation of SiC crystals doped with various impurities introduced during the process of sublimation growth and diffusion is described. The growth of SiC crystals was carried out by a sublimation-sandwich method, proposed by us in 1970. Crystals of the n-and p-type conductivity with maximum content of electrically active impurities (of the order of 10 21 cm −3) were obtained. The solubility values of more than 15 impurities were determined. Special tantalum containers with several temperature zones, allowing to introduce any impurity into SiC practically, are developed. The dependences of the impurities concentration on the temperature, growth rate and seed orientation are found. Diffusion of impurities of boron, aluminum, gallium, beryllium, lithium, nitrogen and phosphorus in silicon carbide polytypes was studied. Diffusion coefficients of these impurities in a wide temperature range are determined. It is shown that for a number of impurities diffusion cannot be described by standard distributions that are explained by the presence of several states of diffusing centers. Fast-diffusing states are atoms located in interstices, as well as centers, including the impurity atom and point defect. The extremely low diffusion mobility of lattice point atoms in the SIC lattice is noted.

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Growth of AlN and GaN crystals by sublimation

Cited by 9 publications

References 88 publications

Plasma Chemical Production Technology of AlN as High Thermal Conductivity Material

Plasma Chemical Production Technology of AlN as High Thermal Conductivity Material

Спектроскопия Комбинационного Рассеяния, Инфракрасного Поглощения И Люминесценции Нитрида Алюминия, Легированного Бериллием

Doping of SiC Crystals during Sublimation Growth and Diffusion

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